IXGH17N100A [IXYS]
Low VCE(sat) IGBT, High speed IGBT; 低VCE （ SAT ）的IGBT ，高速IGBT
| 型号： | IXGH17N100A |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Low VCE(sat) IGBT, High speed IGBT |
| 文件： | 总2页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VCES
IC25 VCE(sat)
Low VCE(sat) IGBT
High speed IGBT
IXGH/IXGM 17 N100 1000 V 34 A 3.5 V
IXGH/IXGM 17 N100A 1000 V 34 A 4.0 V
Symbol
TestConditions
Maximum Ratings
TO-247 AD (IXGH)
VCES
VCGR
TJ = 25°C to 150°C
1000
1000
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ
VGES
VGEM
Continuous
Transient
±20
±30
V
V
G
C
E
IC25
IC90
ICM
TC = 25°C
34
17
68
A
A
A
TO-204 AE (IXGM)
TC = 90°C
TC = 25°C, 1 ms
SSOA
(RBSOA)
VGE= 15 V, TVJ = 125°C, RG = 82 Ω
Clamped inductive load, L = 300 µH
ICM = 34
@ 0.8 VCES
A
PC
TC = 25°C
150
W
C
TJ
-55 ... +150
150
°C
°C
°C
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
TJM
Tstg
-55 ... +150
Md
Mounting torque (M3)
1.13/10 Nm/lb.in.
Features
l
International standard packages
2nd generation HDMOSTM process
Low VCE(sat)
- for low on-state conduction losses
High current handling capability
MOS Gate turn-on
Weight
TO-204 = 18 g, TO-247 = 6 g
l
l
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
l
l
- drive simplicity
Voltage rating guaranteed at high
l
temperature (125°C)
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
l
BVCES
VGE(th)
IC = 3 mA, VGE = 0 V
1000
2.5
V
V
l
l
IC = 250 µA, VCE = VGE
5
l
l
ICES
VCE = 0.8 • VCES
VGE = 0 V
TJ = 25°C
TJ = 125°C
250 µA
mA
1
IGES
VCE = 0 V, VGE = ±20 V
±100 nA
Advantages
Easy to mount with 1 screw (TO-247)
l
VCE(sat)
IC = IC90, VGE = 15 V
17N100
17N100A
3.5
4.0
V
V
(isolated mounting screw hole)
High power density
l
91515E (3/96)
© 1996 IXYS All rights reserved
IXGH 17N100
IXGM 17N100
IXGH 17N100A IXGM 17N100A
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
TO-247 AD Outline
min. typ. max.
IC = IC90; VCE = 10 V,
6
15
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies
Coes
Cres
1500
175
40
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
100
20
120 nC
30 nC
90 nC
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
60
Inductive load, TJ = 25°C
td(on)
tri
td(off)
tfi
100
200
ns
ns
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
IC = IC90, VGE = 15 V, L = 300 µH,
V
CE = 0.8 VCES, RG = Roff = 82 Ω
500 1000 ns
Remarks: Switching times
may increase
for VCE (Clamp) > 0.8 • VCES
17N100
17N100A
750
450
ns
750 ns
,
Eoff
17N100A
3
mJ
higher TJ or increased RG
td(on)
tri
100
200
2.5
ns
ns
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 300 µH
Eon
td(off)
tfi
mJ
VCE = 0.8 VCES, RG = Roff = 82 Ω
700 1000 ns
Remarks: Switching times
may increase
17N100
17N100A
1200 2000 ns
750 1000 ns
for VCE (Clamp) > 0.8 • VCES
,
Eoff
17N100
17N100A
8
6
mJ
mJ
higher TJ or increased RG
TO-204AE Outline
RthJC
RthCK
0.83 K/W
K/W
0.25
IXGH 17N100 and IXGH 17N100 A characteristic curves are located on the
IXGH 17N100U1 and IXGH 17N100AU1 data sheets.
1 = Gate
2 = Emitter
Case = Collector
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
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Insulated Gate Bipolar Transistor, 40A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN
IXYS
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