IXGH16N60C2D1 [IXYS]
HiPerFAST IGBTs C2-Class High Speed w/ Diode; HiPerFAST IGBT的C2级高速瓦特/二极管
| 型号： | IXGH16N60C2D1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFAST IGBTs C2-Class High Speed w/ Diode |
| 文件： | 总7页 (文件大小：217K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFASTTM IGBTs
C2-Class High Speed
w/ Diode
VCES = 600V
IC110 = 16A
VCE(sat) ≤ 3.0V
tfi(typ) = 33ns
IXGA16N60C2D1
IXGP16N60C2D1
IXGH16N60C2D1
TO-263 AA (IXGA)
G
E
C (Tab)
Symbol
Test Conditions
Maximum Ratings
TO-220AB (IXGP)
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
600
600
V
V
VGES
VGEM
Continuous
Transient
±20
±30
V
V
G
C
C (Tab)
IC25
TC = 25°C
40
A
E
IC110
IF110
TC = 110°C
TC = 110°C
16
11
A
A
TO-247 (IXGH)
ICM
TC = 25°C, 1ms
100
A
SSOA
VGE= 15V, TJ = 125°C, RG = 22Ω
ICM = 32
A
(RBSOA)
Clamped Inductive load
VCE ≤ VCES
PC
TC = 25°C
150
W
G
C
C (Tab)
TJ
TJM
Tstg
-55 ... +150
150
°C
°C
°C
E
G = Gate
E = Emitter
C
= Collector
-55 ... +150
Tab = Collector
Md
FC
Mounting Torque (TO-220 & TO-247)
Mounting Force (TO-263)
1.13/10
10..65 / 2.2..14.6
Nm/lb.in.
N/lb.
Features
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6mm (0.062 in.) from Case for 10s
300
260
°C
°C
z
Optimized for Low Switching Losses
Square RBSOA
Anti-Parallel Ultra Fast Diode
International Standard Packages
z
z
z
Weight
TO-263
TO-220
TO-247
2.5
3.0
6.0
g
g
g
Advantages
z
High Power Density
Low Gate Drive Requirement
Symbol
Test Conditions
Characteristic Values
z
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
Applications
VGE(th)
ICES
IC = 250μA, VCE = VGE
3.0
5.5
V
VCE = VCES, VGE = 0V
25 μA
z
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
TJ = 125°C
TJ = 125°C
1 mA
z
z
IGES
VCE = 0V, VGE = ±20V
±100 nA
z
VCE(sat)
IC = 12A, VGE = 15V, Note1
3.0
V
V
z
z
1.8
z
z
Lamp Ballasts
DS99179B(08/10)
© 2010 IXYS CORPORATION, All Rights Reserved
IXGA16N60C2D1 IXGP16N60C2D1
IXGH16N60C2D1
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
IC = 12A, VCE = 10V, Note 1
VCE = 25V, VGE = 0V, f = 1MHz
8
S
Cies
Coes
Cres
657
72
pF
pF
pF
22
Qg(on)
Qge
25
5
nC
nC
nC
IC = 12A, VGE = 15V, VCE = 0.5 • VCES
Qgc
13
td(on)
tri
Eon
td(off)
16
ns
Inductive load, TJ = 25°C
IC = 12A, VGE = 15V
17
0.16
75
ns
mJ
ns
VCE = 400V, RG = 22Ω
tfi
33
ns
Note 2
Eoff
0.09
0.16 mJ
td(on)
tri
Eon
16
ns
Inductive load, TJ = 125°C
IC = 12A, VGE = 15V
18
0.27
ns
mJ
td(off)
tfi
Eoff
115
100
ns
ns
VCE = 400V, RG = 22Ω
Note 2
0.27
mJ
RthJC
RthCK
0.83 °C/W
TO-220
TO-247
0.50
0.21
°C/W
°C/W
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
VF
IF = 10A, VGE = 0V, Note 1
3.0
V
V
TJ = 125°C
1.7
2.5
IRM
A
IF = 12A, VGE = 0V,
-diF/dt = 100A/μs, VR = 100V, TJ = 125°C
IF = 1A, VGE = 0V, -diF/dt = 100A/μs, VR = 30V
trr
trr
110
30
ns
ns
RthJC
2.5 °C/W
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXGA16N60C2D1 IXGP16N60C2D1
IXGH16N60C2D1
TO-220 (IXGP) Outline
TO-247 (IXGH) AD Outline
TO-263 (IXGA) Outline
1. Gate
2. Collector
3. Emitter
4. Collector
Bottom Side
Pins: 1 - Gate
3 - Emitter
2 - Collector
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
1 = Gate
2 = Collector
3 = Emitter
A
b
b2
4.06
0.51
1.14
4.83
0.99
1.40
.160
.020
.045
.190
.039
.055
c
c2
0.40
1.14
0.74
1.40
.016
.045
.029
.055
D
D1
8.64
8.00
9.65
8.89
.340
.280
.380
.320
E
9.65
10.41
.380
.405
E1
e
L
L1
L2
L3
L4
6.22
2.54
14.61
2.29
1.02
1.27
0
8.13
BSC
15.88
2.79
1.40
1.78
0.13
.270
.100 BSC
.320
.575
.090
.040
.050
0
.625
.110
.055
.070
.005
© 2010 IXYS CORPORATION, All Rights Reserved
IXGA16N60C2D1 IXGP16N60C2D1
IXGH16N60C2D1
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
Fig. 1. Output Characteristics @ TJ = 25ºC
24
20
16
12
8
110
11V
VGE = 15V
13V
100
90
80
70
60
50
40
30
20
10
0
VGE = 15V
12V
10V
14V
13V
12V
11V
9V
8V
10V
4
9V
8V
7V
6V
7V
0
0.0
0.5
1.0
1.5
VCE - Volts
2.0
2.5
3.0
3.5
3.5
15
0
5
10
15
20
25
30
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
24
20
16
12
8
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VGE = 15V
VGE = 15V
13V
12V
11V
10V
9V
I C = 24A
I C = 12A
8V
7V
6V
4
I C = 6A
0
0
25
50
75
100
125
150
0
0.5
1
1.5
VCE - Volts
2
2.5
3
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
Fig. 6. Input Admittance
35
30
25
20
15
10
5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
TJ = 25ºC
TJ = - 40ºC
25ºC
125ºC
I C = 24A
12A
10
6A
0
7
8
9
11
12
13
14
4
5
6
7
8
9
10
11
VGE - Volts
VGE - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGA16N60C2D1 IXGP16N60C2D1
IXGH16N60C2D1
Fig. 7. Transconductance
Fig. 8. Gate Charge
16
14
12
10
8
16
14
12
10
8
TJ = - 40ºC
VCE = 300V
I C = 12A
I G = 10mA
25ºC
125ºC
6
6
4
4
2
2
0
0
0
4
8
12
16
20
24
28
0
5
10
15
20
25
30
35
QG - NanoCoulombs
IC - Amperes
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
35
30
25
20
15
10
5
10,000
1,000
100
= 1 MHz
f
C
ies
C
oes
C
res
TJ = 125ºC
RG = 22
Ω
dv / dt < 10V / ns
0
10
100
150
200
250
300
350
400
450
500
550
600
650
0
5
10
15
20
VCE - Volts
25
30
35
40
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2010 IXYS CORPORATION, All Rights Reserved
IXGA16N60C2D1 IXGP16N60C2D1
IXGH16N60C2D1
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.7
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.6
1.4
1.2
1
E
E
on - - - -
VGE = 15V
E
E
on - - - -
off
TJ = 125ºC , VGE = 15V
off
RG = 22
0.6
0.5
0.4
0.3
0.2
0.1
0
Ω ,
VCE = 400V
VCE = 400V
I C = 24A
TJ = 125ºC
0.8
0.6
0.4
0.2
0
TJ = 25ºC
I C = 12A
12
13
14
15
16
17
18
19
20
21
22
23
24
20
30
40
50
60
70
80
90
100
RG - Ohms
IC - Amperes
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
130
125
120
115
110
105
100
95
360
320
280
240
200
160
120
80
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
E
E
on - - - -
t f i
td(off)
- - - -
off
RG = 22
Ω ,
VGE = 15V
TJ = 125ºC, GE = 15V
V
VCE = 400V
CE = 400V
V
I C = 24A
I C = 24A
I C = 12A
I C = 12A
90
40
20
30
40
50
60
RG - Ohms
70
80
90
100
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
160
140
120
100
80
130
180
160
140
120
100
80
140
130
120
110
100
90
tf i
td(on)
- - - -
t f i
td(off) - - - -
120
110
100
90
RG = 22
, VGE = 15V
Ω
RG = 22
, VGE = 15V
Ω
VCE = 400V
VCE = 400V
I C = 24A, 12A
TJ = 125ºC
60
80
60
80
40
70
40
70
TJ = 25ºC
20
60
20
60
0
50
0
50
25
35
45
55
65
75
85
95
105
115
125
12
13
14
15
16
17
18
19
20
21
22
23
24
TJ - Degrees Centigrade
IC - Amperes
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGA16N60C2D1 IXGP16N60C2D1
IXGH16N60C2D1
Fig. 19. Inductive Turn-on Switching Times vs.
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
Collector Current
50
45
40
35
30
25
20
15
10
19.0
90
80
70
60
50
40
30
20
10
0
55
50
45
40
35
30
25
20
15
10
t r i
td(on)
- - - -
, VGE = 15V
tr i
td(on) - - - -
18.5
18.0
17.5
17.0
16.5
16.0
15.5
15.0
RG = 22
Ω
TJ = 125ºC, VGE = 15V
VCE = 400V
I C = 24A
VCE = 400V
TJ = 25ºC, 125ºC
I C = 12A
12
13
14
15
16
17
18
19
20
21
22
23
24
20
30
40
50
60
70
80
90
100
IC - Amperes
RG - Ohms
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
55
50
45
40
35
30
25
20
15
10
19.5
19.0
18.5
18.0
17.5
17.0
16.5
16.0
15.5
15.0
tr i
td(on) - - - -
RG = 22
, VGE = 15V
Ω
VCE = 400V
I C = 24A
I C = 12A
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
© 2010 IXYS CORPORATION, All Rights Reserved
IXYS REF: IXG_16N60C3D1(3D)7-29-10
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