IXGH16N170A [IXYS]
High Voltage IGBT; 高压IGBT
| 型号： | IXGH16N170A |
| 厂家： | 
IXYS CORPORATION |
| 描述： | High Voltage IGBT |
| 文件： | 总2页 (文件大小：526K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Data
IXGH/IXGT 16N170A
IXGH/IXGT 16N170AH1
VCES
IC25
= 1700 V
16 A
High Voltage
IGBT
=
VCE(sat) = 5.0 V
tfi(typ)
=
40 ns
H1
Symbol
TestConditions
Maximum Ratings
TO-268(IXGT)
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
1700
1700
V
V
G
VGES
VGEM
Continuous
Transient
20
30
V
V
E
C (TAB)
IC25
IC90
ICM
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
16
8
40
A
A
A
TO-247AD(IXGH)
SSOA
V
= 15 V, TVJ = 125°C, RG = 10Ω
I
= 40
A
CGlaE mped inductive load
@ 0C.8M VCES
10
TAB)
(RBSOA)
G
C
E
tSC
TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 22Ω
TC = 25°C
µs
G = Gate,
C = Collector,
TAB = Collector
PC
190
W
E=Emitter,
TJ
-55 ... +150
150
-55 ... +150
°C
°C
°C
TJM
Tstg
Md
Features
z
International standard packages
JEDEC TO-268 and
Mounting torque (M3)
TO-247
1.13/10Nm/lb.in.
JEDEC TO-247 AD
z
z
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10s
300
°C
High current handling capability
MOS Gate turn-on
250
°C
- drive simplicity
z
z
Weight
TO-247
TO-268
6
4
g
Rugged NPT structure
g
Molding epoxies meet UL 94 V-0
flammability classification
SONICTM fast recovery copack diode
z
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Applications
min. typ. max.
z
Capacitor discharge & pulser circuits
z
AC motor speed control
BVCES
VGE(th)
I
= 250 µA, VGE = 0 V
1700
3.0
V
ICC = 250 µA, V = VGE
5.0
V
z
DC servo and robot drives
CE
z
DC choppers
z
ICES
VCE = 0.8 • VCES
16N170A
50
100
750
µA
µA
µA
Uninterruptible power supplies (UPS)
z
VGE = 0 V, Note 1
16N170AH1
Switched-mode and resonant-mode
TJ = 125°C 16N170A
power supplies
16N170AH1
1.5 mA
IGES
VCE = 0 V, VGE = 20 V
IC = IC90, VGE = 15 V
100
5.0
nA
Advantages
z
High power density
VCE(sat)
4.0
4.8
V
V
z
Suitable for surface mounting
Easy to mount with 1 screw,
TJ = 125°C
z
(isolated mounting screw hole)
DS99235(10/04)
© 2004 IXYS All rights reserved
IXGH/IXGT 16N170A
IXGH/IXGT 16N170AH1
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD Outline
IC = I ; VCE = 10 V
Note 2 C25
6
10
S
∅ P
Cies
Coes
1700
83
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
16N170A
16N170AH1 125
Cres
30
pF
e
Qg
Qge
Qgc
65
13
24
nC
nC
nC
Dim.
Millimeter
Min. Max.
Inches
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Min. Max.
A
4.7
2.2
2.2
1.0
1.65
2.87
5.3
2.54
2.6
1.4
2.13
3.12
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
A
A12
td(on)
tri
td(off)
tfi
36
57
200
40
ns
ns
350 ns
150 ns
1.5 mJ
Inductive load, TJ = 25°C
IC = IC25, VGE = 15 V
b
b
b12
R = 10 Ω, VCE = 0.5 VCES
C
D
E
.4
.8
NoG te 3
20.80 21.46
15.75 16.26
Eoff
0.9
e
5.20
5.72 0.205 0.225
19.81 20.32
4.50
L
.780 .800
.177
.140 .144
L1
Inductive load, TJ = 125°C
IC = IC25, VGE = 15 V
∅P 3.55
Q
R
S
3.65
td(on)
tri
Eon
38
59
1.5
ns
ns
mJ
mJ
ns
5.89
4.32
6.15 BSC
6.40 0.232 0.252
5.49
.170 .216
242 BSC
R = 10 Ω, VCE = 0.5 VCES
NoG te 3
16N170A
16N170AH1 2.5
200
td(off)
tfi
TO-268 Outline
55
ns
Eoff
1.1
mJ
RthJC
RthCK
0.65 K/W
K/W
(TO-247)
0.25
Reverse Diode (FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol TestConditions
VF
IF = 20 A, VGE = 0 V
2.5 2.95
2.5
V
V
Dim.
Millimeter
Inches
TJ = 125°C
Min.
Max.
Min. Max.
IRM
trr
IF = 20 A; -diF/dt = 150 A/µs
15
80
A
ns
A
A
4.9
2.7
.02
5.1
2.9
.25
.193 .201
.106 .114
.001 .010
A1
A2
VGE = 0 V; VR = 1200 V
b
1.15
1.9
.4
1.45
.045 .057
IRM
trr
TJ = 125°C
20
b2
2.1
.75
.83
200
ns
C
.65
.016 .026
D
E
13.80 14.00
.543 .551
.624 .632
.524 .535
RthJC
0.9 K/W
15.85 16.05
E1
13.3
13.6
e
H
L
5.45 BSC
.215 BSC
.736 .752
.094 .106
Notes:1. Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
18.70 19.10
2.40
1.20
2.70
1.40
L1
.047 .055
2. Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
3. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG.
L2
L3
L4
1.00
1.15
.039 .045
.010 BSC
0.25 BSC
3.80
4.10
.150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered by
oneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728 B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
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