IXFN44N50U3 [IXYS]
HiPerFET Power MOSFETs; HiPerFET功率MOSFET
| 型号： | IXFN44N50U3 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFET Power MOSFETs |
| 文件： | 总5页 (文件大小：154K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFETTM
VDSS
ID (cont)
RDS(on)
trr
500 V
44 A
48 A
0.12 W 35 ns
0.10 W 35 ns
IXFN44N50U2 IXFN44N50U3
Power MOSFETs
IXFN48N50U2 IXFN48N50U3 500 V
3
3
Buck & Boost Configurations for
PFC & Motor Control Circuits
4
2
2
Preliminary data
4
1
1
miniBLOC, SOT-227 B
Symbol
TestConditions
MaximumRatings
1
VDSS
VDGR
TJ = 25°C to 150°C
500
500
V
2
TJ = 25°C to 150°C; RGS = 1 MW
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
4
ID25
IDM
TC = 25°C
44N50
48N50
44
48
A
A
3
TC = 25°C,
pulse width limited by max. TJM
44N50
48N50
176
192
A
A
Features
· Popular Buck & Boost circuit
topologies
· Internationalstandardpackage
miniBLOCSOT-227B
· Aluminium nitrideisolation
- highpowerdissipation
· Isolation voltage 3000 V~
· Low RDS (on) HDMOSTM process
· Rugged polysilicon gate cell structure
· Low drain-to-case capacitance
(<60 pF)
IAR
TC = 25°C
24
30
5
A
EAR
Repetitive
mJ
dv/dt
IS £ I , -di/dt £ 100 A/ms, VDD £ VDSS
TJ £ D1M50°C, RG = 2 W
,
V/ns
PD
TC = 25°C
520
600
60
W
V
VRRM
IFAVM
IFRM
PD
TC = 70°C; rectangular, d = 0.5
tp <10 ms; pulse width limited by TJ
TC = 25°C
A
- reduced RFI
· Ultra-fast FRED diode with soft
reverse recovery
800
180
A
W
Applications
· Power factor controls and buck
regulators
· DC servo and robotic drives
· DC choppers
TJ
TJM
Tstg
-40 ... +150
150
-40 ... +150
°C
°C
°C
VISOL
50/60 Hz, RMS
IISOL £ 1 mA
t = 1 min
t = 1 s
2500
3000
V~
V~
· Switch reluctance motor controls
Md
Mountingtorque
Terminalconnectiontorque(M4)
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Advantages
· Easy to mount with 2 screws
· Space savings
Weight
30
g
· Tightly coupled FRED
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
96535B(7/00)
1 - 5
IXFN44N50U2
IXFN44N50U3
IXFN48N50U2
IXFN48N50U3
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
miniBLOC, SOT-227 B
min. typ. max.
VDSS
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 8 mA
500
2
V
VGS(th)
4
V
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±200
nA
VDS = 0.8 VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
400
2
mA
mA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
44N50
48N50
0.12
0.10
W
W
M4 screws (4x) supplied
Dim.
Millimeter
Min. Max.
31.50 31.88 1.240 1.255
Inches
Min.
Max.
Pulse test, t £ 300 ms, duty cycle d £ 2 %
A
B
7.80
8.20 0.307 0.323
C
D
4.09
4.09
4.29 0.161 0.169
4.29 0.161 0.169
Symbol
gfs
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
E
F
4.09
4.29 0.161 0.169
14.91 15.11 0.587 0.595
min. typ. max.
G
H
30.12 30.30 1.186 1.193
38.00 38.23 1.496 1.505
VDS = 10 V, ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
22
42
S
J
K
11.68 12.22 0.460 0.481
8.92
9.60 0.351 0.378
L
M
0.76
0.84 0.030 0.033
Ciss
Coss
Crss
8400
900
pF
pF
pF
12.60 12.85 0.496 0.506
25.15 25.42 0.990 1.001
1.98
N
O
2.13 0.078 0.084
280
P
Q
4.95
5.97 0.195 0.235
26.54 26.90 1.045 1.059
R
S
3.94
4.72
4.42 0.155 0.174
4.85 0.186 0.191
td(on)
tr
td(off)
tf
30
60
ns
ns
ns
ns
T
U
24.59 25.07 0.968 0.987
-0.05 0.1 -0.002 0.004
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
RG = 1 W (External)
100
30
Qg(on)
Qgs
270
60
nC
nC
nC
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
135
RthJC
RthCK
0.24
0.05
K/W
K/W
Ultra-fast Diode
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
IR
TestConditions
TJ= 25°C; VR= VRRM
VR= 0.8VRRM
200
100
mA
mA
TJ= 125°C; VR= 0.8VRRM
14 mA
VF
IF = 70A, VGS = 0 V, TJ= 150°C
1.5
1.8
V
V
Pulse test, t £ 300 ms, duty cycle d £ 2 % TJ= 25°C
trr
II = 1A, di/dt = -200 A/ms, VR = 30 V, TJ = 25°C
IF= 60A, di/dt = -480 A/ms, VR = 350 V, TJ = 100°C
35
19
50
21
ns
A
IRM
RthJC
RthJK
0.7 K/W
K/W
0.05
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
2 - 5
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXFN44N50U2 IXFN48N50U2
IXFN44N50U3 IXFN48N50U3
Fig.1 Output Characteristics
Fig.2 Input Admittance
100
90
80
70
60
50
40
30
20
10
0
100
90
7V
VGS = 10V
TJ = 25°C
6V
80
TJ = 25°C
70
60
50
40
30
20
10
0
5V
0
5
10
15
20
25
30
35
0
1
2
3
4
5
6
7
8
9
10
VDS - Volts
VGS - Volts
Fig.3 RDS(on) vs. Drain Current
Fig.4 Temperature Dependence
of Drain to Source Resistance
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
TJ = 25°C
I
D = 24A
VGS = 10V
VGS = 15V
0
10 20 30 40 50 60 70 80 90 100
ID - Amperes
-50 -25
0
25 50 75 100 125 150
TJ - Degrees C
Fig.5 Drain Current vs.
Case Temperature
Fig.6 Temperature Dependence of
Breakdown and Threshold Voltage
60
50
40
30
20
10
0
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
VGS(th)
BVDSS
48N50
44N50
-50 -25
0
25 50 75 100 125 150
TC - Degrees C
-50 -25
0
25 50 75 100 125 150
TJ - Degrees C
© 2000 IXYS All rights reserved
3 - 5
IXFN44N50U2 IXFN48N50U2
IXFN44N50U3 IXFN48N50U3
Fig.7 Gate Charge Characteristic Curve
Fig.8 Capacitance Curves
10
9
8
7
6
5
4
3
2
1
0
10000
VDS = 250V
ID = 24A
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
Ciss
IG = 10mA
f = 1 MHz
VDS = 25V
Coss
Crss
0
50 100 150 200 250 300 350 400
Gate Charge - nCoulombs
0
5
10
15
20
25
VDS - Volts
Fig.9 Source Current vs. Source
to Drain Voltage
100
90
80
70
60
50
40
30
20
10
0
TJ = 125°C
TJ = 25°C
0.00 0.25 0.50 0.75 1.00 1.25 1.50
VSD - Volt
Fig.10 Transient Thermal Impedance
0.1
0.01
0.001
0.01
0.1
1
Time - Seconds
© 2000 IXYS All rights reserved
4 - 5
IXFN44N50U2 IXFN48N50U2
IXFN44N50U3 IXFN48N50U3
Fig. 11. Forward voltage drop.
Fig. 12. Recovery charge versus -diF/dt.
Fig. 13. Peak reverse current vs. -diF/dt.
Fig. 14. Dynamic parameters versus
junctiontemperature.
Fig. 15. Recovery time versus -diF/dt.
Fig. 16. Peak forward voltage and forward
recovery time vs. diF/dt.
Fig. 17. Transient thermal impedance junction to case.
© 2000 IXYS All rights reserved
5 - 5
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