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IXFN44N80P [LITTELFUSE]

Power Field-Effect Transistor, 39A I(D), 800V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4;
IXFN44N80P
型号： IXFN44N80P
厂家： LITTELFUSE    LITTELFUSE
描述：

Power Field-Effect Transistor, 39A I(D), 800V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4

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PolarTM HiperFETTM  
Power MOSFET  
VDSS = 800V  
ID25 = 39A  
RDS(on) 190m  
IXFN44N80P  
D
S
trr  
250ns  
G
S
N-Channel Enhancement Mode  
Fast Intrinsic Rectifier  
miniBLOC  
E153432  
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
800  
800  
V
V
VDGR  
S
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
D
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
39  
A
A
G = Gate  
S = Source  
D = Drain  
100  
IA  
EAS  
TC = 25C  
TC = 25C  
22  
3.4  
A
J
Either Source Terminal S can be used as  
the Source Terminal or the Kelvin Source  
(Gate Return) Terminal.  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150C  
TC = 25C  
10  
V/ns  
W
694  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
C  
C  
C  
Features  
International Standard Package  
Low Intrinsic Gate Resistance  
miniBLOC with Aluminum Nitride  
Isolation  
VISOL  
50/60 Hz, RMS, t = 1minute  
2500  
3000  
V~  
V~  
IISOL 1mA,  
t = 1s  
Md  
Mounting Torque for Base Plate  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in  
Nm/Ib.in  
Low Package Inductance  
Fast Intrinsic Rectifier  
Low RDS(on) and QG  
Weight  
30  
g
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
800  
3.0  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 800A  
VDS = VGS, ID = 8mA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
DC-DC Converters  
Battery Chargers  
Switch-Mode and Resonant-Mode  
5.0  
200 nA  
Power Supplies  
AC Motor Control  
High Speed Power Switching  
IDSS  
50 A  
1.5 mA  
TJ = 125C  
Appliccation  
RDS(on)  
VGS = 10V, ID = 22A, Note 1  
190 m  
DS99503F(8/17)  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXFN44N80P  
Symbol  
Test Conditions  
Characteristic Values  
SOT-227B (IXFN) Outline  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 22A, Note 1  
27  
43  
S
Ciss  
Coss  
Crss  
18  
910  
30  
nF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
td(on)  
28  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 22A  
RG = 1(External)  
tr  
22  
75  
ns  
ns  
td(off)  
tf  
27  
ns  
(M4 screws (4x) supplied)  
Qg(on)  
Qgs  
200  
67  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 22A  
Qgd  
65  
RthJC  
RthCS  
0.18C/W  
C/W  
0.05  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
44  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
100  
1.5  
trr  
QRM  
IRM  
250 ns  
C  
IF = 22A, -di/dt = 100A/s  
0.8  
8.0  
VR = 100V, VGS = 0V  
A
Note  
1. Pulse test, t 300s, duty cycle, d 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
IXFN44N80P  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
Fig. 1. Output Characteristics @ TJ = 25oC  
45  
40  
35  
30  
25  
20  
15  
10  
5
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 10V  
GS  
V
= 10V  
GS  
6V  
7V  
6V  
5V  
5V  
0
0
0
0
1
2
3
4
5
6
7
8
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 22A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
45  
40  
35  
30  
25  
20  
15  
10  
5
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
V
= 10V  
GS  
V
= 10V  
GS  
6V  
I
= 44A  
D
I
= 22A  
D
5V  
0
2
4
6
8
10  
12  
14  
16  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 22A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs. Case Temperature  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
V
= 10V  
GS  
T = 125oC  
J
T = 25oC  
J
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
ID - Amperes  
TC - Degrees Centigrade  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXFN44N80P  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
80  
70  
60  
50  
40  
30  
20  
10  
0
T
J
= - 40oC  
25oC  
125oC  
T
= 125oC  
25oC  
J
- 40oC  
0
10  
20  
30  
40  
50  
60  
70  
80  
3.5  
0.3  
0
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
1.3  
40  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
140  
120  
100  
80  
10  
9
8
7
6
5
4
3
2
1
0
V
= 400V  
DS  
I
I
= 22A  
D
G
= 10mA  
60  
40  
T
= 125oC  
J
20  
T
= 25oC  
J
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal Impedance  
Fig. 11. Capacitance  
100,000  
10,000  
1,000  
100  
1
= 1 MHz  
f
C
iss  
C
oss  
0.1  
C
rss  
10  
0.01  
5
10  
15  
20  
25  
30  
35  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: IXF_44N80P (9S-788) 6-8-06-A  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  

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