IXFN44N80Q3 [IXYS]
N-Channel Enhancement Mode Fast Intrinsic Rectifier Avalanche Rated; N沟道增强模式快速内在整流器的额定雪崩
| 型号： | IXFN44N80Q3 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | N-Channel Enhancement Mode Fast Intrinsic Rectifier Avalanche Rated |
| 文件： | 总5页 (文件大小：129K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiperFETTM
Power MOSFET
Q3-Class
VDSS = 800V
ID25 = 37A
RDS(on) ≤ 190mΩ
IXFN44N80Q3
trr
≤ 300ns
N-Channel Enhancement Mode
Fast Intrinsic Rectifier
Avalanche Rated
miniBLOC
E153432
S
Symbol
VDSS
Test Conditions
Maximum Ratings
G
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
800
800
V
V
VDGR
S
VGSS
VGSM
Continuous
Transient
±30
±40
V
V
D
ID25
IDM
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
37
A
A
G = Gate
S = Source
D = Drain
130
IA
EAS
TC = 25°C
TC = 25°C
44
3.5
A
J
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
(Gate Return) Terminal.
dv/dt
PD
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
50
V/ns
W
780
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
Features
z
z
z
International Standard Package
Low Intrinsic Gate Resistance
miniBLOC with Aluminum Nitride
Isolation
VISOL
50/60 Hz, RMS, t = 1minute
2500
3000
V~
V~
IISOL ≤ 1mA,
t = 1s
z
z
z
z
Md
Mounting Torque for Base Plate
Terminal Connection Torque
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
Low RDS(on) and QG
Weight
30
g
Advantages
z
High Power Density
Easy to Mount
Space Savings
z
z
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
800
3.5
Typ.
Max.
Applications
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 3mA
VDS = VGS, ID = 8mA
VGS = ±30V, VDS = 0V
VDS = VDSS, VGS = 0V
V
V
z
6.5
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
z
±200 nA
z
Power Supplies
DC Choppers
Temperature and Lighting Controls
IDSS
50 μA
z
TJ = 125°C
2.5 mA
z
RDS(on)
VGS = 10V, ID = 22A, Note 1
190 mΩ
DS100360B(10/12)
© 2012 IXYS CORPORATION, All Rights Reserved
IXFN44N80Q3
Symbol
Test Conditions
Characteristic Values
SOT-227B (IXFN) Outline
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 20V, ID = 22A, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
Gate Input Resistance
22
37
S
Ciss
Coss
Crss
10950
957
pF
pF
pF
95
RGi
0.20
45
Ω
td(on)
ns
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 22A
RG = 1Ω (External)
tr
60
63
ns
ns
td(off)
(M4 screws (4x) supplied)
tf
20
ns
Qg(on)
Qgs
185
67
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 22A
Qgd
83
RthJC
RthCS
0.16 °C/W
°C/W
0.05
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
IS
VGS = 0V
44
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
176
1.4
trr
QRM
IRM
300 ns
IF = 22A, -di/dt = 100A/μs
1.8
13.4
μC
A
VR = 100V, VGS = 0V
Note
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
6,534,343
6,583,505
6,710,405 B2 6,759,692
6,710,463
IXFN44N80Q3
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
45
40
35
30
25
20
15
10
5
110
100
90
80
70
60
50
40
30
20
10
0
VGS = 10V
9V
VGS = 10V
9V
8V
8V
7V
6V
7V
6V
0
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
8
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 22A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
45
40
35
30
25
20
15
10
5
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
VGS = 10V
9V
VGS = 10V
I D = 44A
I D = 22A
8V
7V
6V
0
0
2
4
6
8
10
12
14
16
18
-50
-25
0
25
50
75
100
125
150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 22A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
40
35
30
25
20
15
10
5
3.0
2.6
2.2
1.8
1.4
1.0
0.6
VGS = 10V
TJ = 125ºC
TJ = 25ºC
0
-50
-25
0
25
50
75
100
125
150
0
10
20
30
40
50
60
70
80
90
100
ID - Amperes
TC - Degrees Centigrade
© 2012 IXYS CORPORATION, All Rights Reserved
IXFN44N80Q3
Fig. 7. Input Admittance
Fig. 8. Transconductance
70
60
50
40
30
20
10
0
60
50
40
30
20
10
0
TJ = - 40ºC
TJ = 125ºC
25ºC
- 40ºC
25ºC
125ºC
4
0.3
0
4.5
5
5.5
6
6.5
7
7.5
8
8.5
1.2
40
0
10
20
30
40
50
60
70
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Gate Charge
140
120
100
80
10
9
8
7
6
5
4
3
2
1
0
VDS = 400V
I
D = 22A
I G = 10mA
60
TJ = 125ºC
40
TJ = 25ºC
20
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
40
80
120
160
200
240
VSD - Volts
QG - NanoCoulombs
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
1000
100,000
10,000
1,000
100
= 1 MHz
f
RDS(on) Limit
C
iss
100
10
1
25µs
250µs
C
C
oss
TJ = 150ºC
1ms
TC = 25ºC
rss
Single Pulse
10
0.1
5
10
15
20
25
30
35
10
100
1,000
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFN44N80Q3
Fig. 13. Maximum Transient Thermal Impedance
aaaaa
0.4
0.1
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2012 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_44N80Q3(Q8-R88)10-10-12
相关型号：
IXFN48N50QD2
Power Field-Effect Transistor, 48A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4
IXYS
©2020 ICPDF网 联系我们和版权申明