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IXFN48N50 [IXYS]

HiPerFET Power MOSFETs; HiPerFET功率MOSFET
IXFN48N50
型号： IXFN48N50
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

HiPerFET Power MOSFETs
HiPerFET功率MOSFET
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中文：  中文翻译
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HiPerFETTM  
Power MOSFETs  
VDSS  
ID25  
RDS(on)  
IXFK / IXFN 44 N50  
IXFK / IXFN 48 N50  
500V 44 A 0.12 Ω  
500V 48 A 0.10 Ω  
trr ≤ 250 ns  
N-Channel Enhancement Mode  
Avalanche Rated, High dv/dt, Low trr  
TO-264 AA  
Symbol  
TestConditions  
MaximumRatings  
(IXFK)  
IXFK  
IXFN  
VDSS  
VDGR  
TJ = 25°C to 150°C  
500  
500  
500  
500  
V
V
TJ = 25°C to 150°C; RGS = 1 MΩ  
G
D
(TAB)  
VGS  
Continuous  
Transient  
±20  
±30  
±20  
±30  
V
V
S
VGSM  
ID25  
TC = 25°C  
44N50  
48N50  
44  
48  
44  
48  
A
A
miniBLOC, SOT-227 B (IXFN)  
E153432  
IDM  
TC = 25°C,  
pulse width limited by TJM  
44N50  
48N50  
176  
192  
176  
192  
A
A
S
G
D
IAR  
TC = 25°C  
TC = 25°C  
24  
30  
5
24  
30  
5
A
EAR  
mJ  
G
S
dv/dt  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 2 Ω  
,
V/ns  
S
D
S
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
PD  
TC = 25°C  
500  
520  
W
TJ  
-55 ... +150  
150  
-55 ... +150  
300  
°C  
°C  
°C  
Either Source terminal at miniBLOC can be used  
as Main or Kelvin Source  
TJM  
Tstg  
Features  
TL  
1.6 mm (0.063 in) from case for 10 s  
-
°C  
ꢀ
Internationalstandardpackages  
ꢀ
VISOL  
50/60 Hz, RMS  
ISOL ≤ 1 mA  
t = 1 min  
t = 1 s  
-
-
2500  
3000  
V~  
V~  
Molding epoxies meet UL94V-0  
flammabilityclassification  
I
ꢀ
SOT-227BminiBLOCwithaluminium  
nitrideisolation  
Low RDS (on) HDMOSTM process  
Md  
Mountingtorque  
Terminalconnectiontorque  
0.9/6  
-
1.5/13 Nm/lb.in.  
1.5/13 Nm/lb.in.  
ꢀ
ꢀ
Unclamped Inductive Switching (UIS)  
rated  
Fast intrinsic rectifier  
Weight  
Symbol  
10  
30  
g
ꢀ
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
Applications  
min. typ. max.  
ꢀ
DC-DC converters  
ꢀ
Synchronousrectification  
Battery chargers  
Switched-modeandresonant-mode  
VDSS  
VGS = 0 V, ID = 1 mA  
VDS = VGS, ID = 8 mA  
500  
2
V
V
ꢀ
VGS(th)  
4
ꢀ
IGSS  
IDSS  
VGS = ±20 VDC, VDS = 0  
±200 nA  
400 µA  
powersupplies  
DC choppers  
Temperatureandlightingcontrols  
ꢀ
VDS = 0.8 • VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
ꢀ
2
mA  
RDS(on)  
VGS = 10 V, ID = 0.5 • ID25  
44N50  
48N50  
0.12  
0.10  
Ω
Ω
Advantages  
ꢀ
Easy to mount  
ꢀ
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
Space savings  
ꢀ
High power density  
93001I (07/00)  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
C1 - 184  
IXFN / IXFK 44N50  
IXFN / IXFK 48N50  
Symbol  
gfs  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-264 AA Outline  
VDS = 10 V; ID = 0.5 • ID25, pulse test  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
22  
42  
S
Ciss  
Coss  
Crss  
8400  
900  
280  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
30  
60  
100  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1 Ω (External),  
tf  
30  
ns  
Dim.  
Millimeter  
Inches  
Qg(on)  
Qgs  
Qgd  
270  
60  
135  
nC  
nC  
nC  
Min.  
Max.  
Min.  
Max.  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
A
A1  
A2  
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
.114  
.083  
b
b1  
b2  
c
D
1.12  
2.39  
2.90  
0.53  
25.91 26.16  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.021  
1.020  
.780  
.215 BSC  
.000  
.000  
.056  
.106  
.122  
.033  
1.030  
.786  
RthJC  
RthCK  
TO-264 AA  
TO-264 AA  
0.25 K/W  
K/W  
0.15  
0.05  
0.83  
RthJC  
RthCK  
miniBLOC, SOT-227 B  
miniBLOC, SOT-227 B  
0.24 K/W  
K/W  
E
e
J
19.81 19.96  
5.46 BSC  
0.00  
0.00  
0.25  
0.25  
.010  
.010  
K
L
L1  
20.32 20.83  
.800  
.090  
.820  
.102  
2.29  
2.59  
Source-DrainDiode  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
P
3.17  
3.66  
.125  
.144  
Q
Q1  
R
R1  
S
T
6.07  
8.38  
3.81  
1.78  
6.04  
1.57  
6.27  
8.69  
4.32  
2.29  
6.30  
1.83  
.239  
.330  
.150  
.070  
.238  
.062  
.247  
.342  
.170  
.090  
.248  
.072  
Symbol  
TestConditions  
IS  
VGS = 0 V  
48  
192  
1.5  
A
A
V
ISM  
VSD  
Repetitive; pulse width limited by TJM  
miniBLOC, SOT-227 B  
IF = 100 A, VGS = 0 V,  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
trr  
250 ns  
QRM  
IRM  
IF = IS, -di/dt = 100 A/µs, VR = 100 V  
TBD  
20  
µC  
A
M4 screws (4x) supplied  
Dim.  
Millimeter  
Min. Max.  
31.50 31.88 1.240 1.255  
Inches  
Min.  
Max.  
A
B
7.80  
8.20 0.307 0.323  
C
D
4.09  
4.09  
4.29 0.161 0.169  
4.29 0.161 0.169  
E
F
4.09  
4.29 0.161 0.169  
14.91 15.11 0.587 0.595  
G
H
30.12 30.30 1.186 1.193  
38.00 38.23 1.496 1.505  
J
11.68 12.22 0.460 0.481  
K
8.92  
9.60 0.351 0.378  
L
0.76  
0.84 0.030 0.033  
M
12.60 12.85 0.496 0.506  
25.15 25.42 0.990 1.001  
N
O
1.98  
2.13 0.078 0.084  
P
4.95  
5.97 0.195 0.235  
Q
26.54 26.90 1.045 1.059  
R
S
3.94  
4.72  
4.42 0.155 0.174  
4.85 0.186 0.191  
T
U
24.59 25.07 0.968 0.987  
-0.05 0.1 -0.002 0.004  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:  
© 2000 IXYS All rights reserved  
C1 - 185  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715  
5,381,025  
IXFN / IXFK 44N50  
IXFN / IXFK 48N50  
Fig. 1 Output Characteristics  
Fig. 2 Input Admittance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
7V  
VGS = 10V  
TJ = 25°C  
6V  
TJ = 25°C  
5V  
0
5
10  
15  
20  
25  
30  
35  
0
1
2
3
4
5
6
7
8
9
10  
VDS - Volts  
VGS - Volts  
Fig. 3 RDS(on) vs. Drain Current  
Fig. 4 Temperature Dependence  
of Drain to Source Resistance  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
2.50  
2.25  
2.00  
1.75  
1.50  
1.25  
1.00  
0.75  
0.50  
TJ = 25°C  
ID = 24A  
VGS = 10V  
VGS = 15V  
0
10 20 30 40 50 60 70 80 90 100  
ID - Amperes  
-50 -25  
0
25 50 75 100 125 150  
TJ - Degrees C  
Fig. 5 Drain Current vs.  
Case Temperature  
Fig. 6 Temperature Dependence of  
Breakdown and Threshold Voltage  
60  
50  
40  
30  
20  
10  
0
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
VGS(th)  
BVDSS  
48N50  
44N50  
-50 -25  
0
25 50 75 100 125 150  
TC - Degrees C  
-50 -25  
0
25 50 75 100 125 150  
TJ - Degrees C  
© 2000 IXYS All rights reserved  
C1 - 186  
IXFN / IXFK 44N50  
IXFN / IXFK 48N50  
Fig.7 Gate Charge Characteristic Curve  
Fig.8 Capacitance Curves  
10  
9
8
7
6
5
4
3
2
1
0
10000  
9000  
8000  
7000  
6000  
5000  
4000  
3000  
2000  
1000  
0
VDS = 250V  
I
D = 24A  
Ciss  
IG = 10mA  
f = 1 MHz  
VDS = 25V  
Coss  
Crss  
0
50 100 150 200 250 300 350 400  
Gate Charge - nCoulombs  
0
5
10  
15  
20  
25  
VDS - Volts  
Fig.9 Source Current vs. Source  
to Drain Voltage  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = 125°C  
TJ = 25°C  
0.00  
0.25  
0.50  
0.75  
1.00  
1.25  
1.50  
VSD - Volt  
Fig.10 Transient Thermal Impedance  
0.1  
0.01  
0.001  
0.01  
0.1  
1
Time - Seconds  
© 2000 IXYS All rights reserved  
C1 - 187  

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