IXFN44N80P [IXYS]
PolarHV HiPerFET Power MOSFET; PolarHV HiPerFET功率MOSFET
| 型号： | IXFN44N80P |
| 厂家： | 
IXYS CORPORATION |
| 描述： | PolarHV HiPerFET Power MOSFET |
| 文件： | 总4页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PolarHVTM HiPerFET
Power MOSFET
IXFN 44N80P
VDSS = 800
ID25 = 39
RDS(on) ≤ 190 mΩ
trr ≤ 250 ns
V
A
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
Test Conditions
Maximum Ratings
miniBLOC, SOT-227 B (IXFN)
E153432
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
800
800
V
V
S
G
VGS
VGSM
Continuous
Transient
± 30
± 40
V
V
ID25
IDM
TC = 25°C
39
100
A
A
S
TC = 25°C, pulse width limited by TJM
D
D = Drain
G = Gate
S = Source
IAR
EAR
EAS
TC = 25°C
TC = 25°C
TC = 25°C
22
80
3.4
A
mJ
J
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
dv/dt
PD
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 10 Ω
,
10
V/ns
Features
TC = 25°C
694
W
• International standard package
• Encapsulating epoxy meets
UL 94 V-0, flammability classification
• miniBLOC with Aluminium nitride
isolation
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
TL
1.6 mm (0.062 in.) from case for 10 s
300
°C
VISOL
50/60 Hz, RMS, 1 minute
IISOL < 1 mA, 10 seconds
2500
3000
V~
V~
Md
Mounting torque
Terminal torque
1.13/10 Nm/lb.in.
1.13/10 Nm/lb.in. • Low package inductance
• Fast intrinsic Rectifier
Weight
30
g
Applications
Symbol
Test Conditions
Characteristic Values
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
(TJ = 25°C unless otherwise specified)
Min. Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0 V, ID = 800 μA
VDS = VGS, ID = 8 mA
VGS = ± 30 V, VDS = 0 V
800
V
V
3.0
5.0
± ±200
50
nA
μA
• Temperature and lighting controls
• Low voltage relays
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
1.5 mA
Advantages
• Easy to mount
• Space savings
• High power density
RDS(on)
VGS = 10 V, ID = 0.5 ITD25, Note 1
190 mΩ
DS99503E(06/06)
© 2006 IXYS All rights reserved
IXFN 44N80P
Symbol
gfs
Test Conditions
Characteristic Values
SOT-227B (IXFN) Outline
(TJ = 25°C unless otherwise specified)
Min. Typ.
Max.
VDS= 20 V; ID = 0.5 ID25, Note 1
VGS = 0 V, VDS = 25 V, f = 1 MHz
27
43
S
Ciss
Coss
Crss
12
910
30
nF
pF
pF
td(on)
tr
td(off)
tf
28
22
75
27
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
RG = 1 Ω (External)
(M4 screws (4x) supplied)
Qg(on)
Qgs
200
67
nC
nC
nC
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
65
RthJC
RthCS
0.18 °C/W
°C/W
0.05
Source-Drain Diode
Characteristic Values
TJ = 25°C unless otherwise specified)
Symbol
IS
Test Conditions
Min. Typ.
Max.
VGS = 0 V
44
A
A
V
ISM
Repetitive
100
1.5
VSD
IF = IS, VGS = 0 V, Note 1
trr
IF = 22 A, -di/dt = 100 A/μs
250 ns
QRM
IRM
VR = 100 V, VGS = 0 V
0.8
8.0
μC
A
Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ±≤ 2%
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
7,005,734 B2
6,534,343
6,583,505
6,710,405B2 6,759,692
6,710,463
6,771,478 B2
IXFN 44N80P
Fig. 1. Output Characteristics
Fig. 2. Extended Output Characteristics
@ 25 C
@ 25 C
°
°
45
40
35
30
25
20
15
10
5
100
90
80
70
60
50
40
30
20
10
0
V
= 10V
7V
V
= 10V
7V
GS
GS
6V
6V
5V
5V
0
0
3
6
9
12 15 18 21 24 27 30
0
0
0
1
2
3
4
5
6
7
8
VD S - Volts
VD S - Volts
Fig. 3. Output Characteristics
Fig. 4. RDS(on Norm alized to ID = 22A
)
@ 125 C
°
Value vs. Junction Tem perature
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
45
40
35
30
25
20
15
10
5
V
= 10V
7V
GS
V
= 10V
GS
6V
I
= 44A
D
I
= 22A
D
5V
0
-50
-25
0
25
50
75
100 125 150
2
4
6
8
10
12
14
16
VD S - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Norm alized to ID = 22A
Value vs. Drain Current
Fig. 6. Drain Current vs. Case
Tem perature
44
40
36
32
28
24
20
16
12
8
2.4
2.2
2
V
= 10V
GS
T
J
= 125 C
°
1.8
1.6
1.4
1.2
1
T = 25 C
J
°
4
0
0.8
-50
-25
0
25
50
75
100
125
150
10 20 30 40 50 60 70 80 90 100
TC - Degrees Centigrade
I D - Amperes
© 2006 IXYS All rights reserved
IXFN 44N80P
Fig. 8. Transconductance
Fig. 7. Input Adm ittance
70
60
50
40
30
20
10
0
90
80
70
60
50
40
30
20
10
0
T
J
= - 40 C
°
25 C
°
125 C
°
T
J
= 125 C
°
25 C
°
- 40 C
°
0
10
20
30
40
50
60
70
80
3.5
4
4.5
5
5.5
6
6.5
VG S - Volts
I D - Amperes
Fig. 9. Source Current vs.
Source-To-Drain Voltage
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
140
120
100
80
V
= 400V
DS
I
I
= 22A
D
G
= 10mA
60
40
T = 125 C
°
J
20
T = 25 C
°
J
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1 1.2 1.3
0
25
50
75
100 125 150 175 200
VS D - Volts
Q G - NanoCoulombs
Fig. 12. M axim um Transient Therm al
Resistance
Fig. 11. Capacitance
1.00
0.10
0.01
100000
10000
1000
100
f = 1MHz
C
C
iss
oss
C
rss
10
0.001
0.01
0.1
1
10
0
5
10
15
20
25
30
35
40
Pulse Width - Seconds
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
相关型号：
IXFN48N50QD2
Power Field-Effect Transistor, 48A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4
IXYS
©2020 ICPDF网 联系我们和版权申明