IXFA4N60P3 [IXYS]
Power Field-Effect Transistor, 4A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263AA, 3 PIN;
| 型号： | IXFA4N60P3 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor, 4A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263AA, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总5页 (文件大小：167K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Polar3 TM HiPerFETTM
Power MOSFET
VDSS = 600V
ID25 = 4A
RDS(on) 2.4
IXFY4N60P3
IXFA4N60P3
IXFP4N60P3
N-Channel Enhancement Mode
Avalanche Rated
TO-252 (IXFY)
Fast Intrinsic Rectifier
G
S
D (Tab)
Symbol
VDSS
Test Conditions
Maximum Ratings
TO-263 (IXFA)
TJ = 25C to 150C
600
600
V
V
VDGR
TJ = 25C to 150C, RGS = 1M
G
S
VGSS
VGSM
Continuous
Transient
30
40
V
V
D (Tab)
ID25
IDM
TC = 25C
4
8
A
A
TO-220 (IXFP)
TC = 25C, Pulse Width Limited by TJM
IA
TC = 25C
TC = 25C
2
A
EAS
200
mJ
dv/dt
PD
IS IDM, VDD VDSS, TJ 150C
TC = 25C
35
V/ns
W
G
D
D (Tab)
S
114
G = Gate
S = Source
D
= Drain
TJ
-55 ... +150
150
C
C
C
Tab = Drain
TJM
Tstg
-55 ... +150
TL
TSOLD
Maximum Lead Temperature for Soldering
Plastic Body for 10s
300
260
°C
°C
Features
Md
Mounting Torque (TO-220)
1.13 / 10
Nm/lb.in.
International Standard Packages
Fast Intrinsic Rectifier
Avalanche Rated
Low RDS(ON) and QG
Low Package Inductance
Weight
TO-252
TO-263
TO-220
0.35
2.50
3.00
g
g
g
Advantages
High Power Density
Easy to Mount
Space Savings
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 1mA
VDS = VGS, ID = 250μA
VGS = 30V, VDS = 0V
VDS = VDSS, VGS = 0V
600
V
V
Applications
3.0
5.0
Switch-Mode and Resonant-Mode
100 nA
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
IDSS
10 A
100 μA
TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
2.4
Robotics and Servo Controls
DS100427B(8/15)
© 2015 IXYS CORPORATION, All Rights Reserved
IXFY4N60P3 IXFA4N60P3
IXFP4N60P3
Symbol
Test Conditions
Characteristic Values
TO-252 Outline
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
gfs
VDS = 20V, ID = 0.5 • ID25, Note 1
Gate Input Resistance
2.2
3.7
S
RGi
6.0
Ciss
Coss
Crss
365
46
3
pF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
1. Gate
2. Drain
3. Source
4. Drain
Bottom Side
td(on)
tr
td(off)
tf
15
24
24
23
ns
ns
ns
ns
Resistive Switching Times
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 30 (External)
Dim. Millimeter
Min. Max.
Inches
Min. Max.
Qg(on)
Qgs
6.9
1.7
2.8
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
A
A1
2.19 2.38 0.086 0.094
0.89 1.14 0.035 0.045
Qgd
A2
b
0
0.13
0
0.005
0.64 0.89 0.025 0.035
RthJC
RthCS
1.10 C/W
C/W
b1
b2
0.76 1.14 0.030 0.045
5.21 5.46 0.205 0.215
TO-220
0.50
c
c1
0.46 0.58 0.018 0.023
0.46 0.58 0.018 0.023
D
D1
5.97 6.22 0.235 0.245
4.32 5.21 0.170 0.205
Source-Drain Diode
E
E1
6.35 6.73 0.250 0.265
4.32 5.21 0.170 0.205
Symbol
Test Conditions
Characteristic Values
e
e1
2.28 BSC
4.57 BSC
0.090 BSC
0.180 BSC
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
H
L
9.40 10.42 0.370 0.410
0.51 1.02 0.020 0.040
IS
VGS = 0V, Note1
4
A
A
L1
L2
L3
0.64 1.02 0.025 0.040
0.89 1.27 0.035 0.050
2.54 2.92 0.100 0.115
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
16
1.4
V
trr
QRM
IRM
250
C
ns
TO-220 Outline
IF = 4A, -di/dt = 25A/μs
0.35
2.15
VR = 100V
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
TO-263 Outline
Pins: 1 - Gate
3 - Source
2 - Drain
1 = Gate
2 = Drain
3 = Source
4 = Drain
Bottom Side
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2 6,759,692
6,710,463
6,727,585
7,005,734B2 7,157,338B2
7,063,975B2
6,771,478B2 7,071,537
IXFY4N60P3 IXFA4N60P3
IXFP4N60P3
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
Fig. 1. Output Characteristics @ TJ = 25ºC
7
6
5
4
3
2
1
0
4
3.5
3
V
= 10V
8V
V
= 10V
8V
GS
GS
7V
7V
2.5
2
1.5
1
6V
5V
6V
5V
0.5
0
0
1
2
3
4
5
6
7
8
9
10
0
5
10
15
20
25
30
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 2A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
4
3.5
3
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
V
= 10V
7V
GS
V
= 10V
GS
I
= 4A
D
6V
2.5
2
I
= 2A
D
1.5
1
5V
4V
0.5
0
0
2
4
6
8
10
12
14
16
18
20
22
-50
-25
0
25
50
75
100
125
150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 2A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
V
= 10V
GS
4
T = 125ºC
J
3
2
1
0
T = 25ºC
J
0
1
2
3
4
5
6
7
-50
-25
0
25
50
75
100
125
150
ID - Amperes
TC - Degrees Centigrade
© 2015 IXYS CORPORATION, All Rights Reserved
IXFY4N60P3 IXFA4N60P3
IXFP4N60P3
Fig. 7. Input Admittance
Fig. 8. Transconductance
5
4.5
4
7
6
5
4
3
2
1
0
T
J
= - 40ºC
3.5
3
25ºC
2.5
2
125ºC
T
= 125ºC
J
25ºC
- 40ºC
1.5
1
0.5
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Gate Charge
12
10
8
10
9
8
7
6
5
4
3
2
1
0
V
= 300V
DS
I
I
= 2A
D
G
= 10mA
6
T
J
= 125ºC
4
T
J
= 25ºC
2
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
1
2
3
4
5
6
7
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
Fig. 12. Forward-Bias Safe Operating Area
1,000
100
10
10
R
DS(on)
Limit
25µs
C
C
iss
100µs
1
oss
T
= 150ºC
= 25ºC
J
T
C
Single Pulse
C
= 1 MHz
5
f
rss
1ms
1
0.1
0
10
15
20
25
30
35
40
10
100
1,000
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFY4N60P3 IXFA4N60P3
IXFP4N60P3
Fig. 13. Maximum Transient Thermal Impedance
aaaaaa
2
1
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Seconds
© 2015 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_4N60P3(K2)12-07-11
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