MJ12002 [ISC]
isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管
| 型号： | MJ12002 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
MJ12002
DESCRIPTION
· Collector-Emitter Voltage-
VCEX = 1500V
·Forward Bias safe Safe Operation Area
·Switching Time with Inductive Load
APPLICATIONS
·Designed for use in large screen color deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
1500
750
5
UNIT
V
VCEX
Collector-Emitter Voltage
VCEO(SUS) Collector-Emitter Voltage
V
VEBO
IC
Emitter-Base Voltage
V
Collector Current-Continuous
Base Current-Continuous
Emitter Current-Continuous
Collector Power Dissipation@TC=25℃
Junction Temperature
2.5
A
IB
2
A
IE
4.5
A
PC
TJ
75
W
℃
℃
150
-65~150
Storage Temperature
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance,Junction to Case
1.67
℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
MJ12002
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
CONDITIONS
MIN
TYP. MAX UNIT
VCEO(SUS)
IC=50mA ; IB=0
750
V
IC= 2A; IB= 1.8A
IC= 2A; IB= 1.8A
VCE= 1500V; VBE= 0
VEB= 5V; IC=0
5.0
1.5
1.0
0.1
V
V
VCE
(sat)
VBE
(sat)
ICES
mA
mA
IEBO
hFE
fT
DC Current Gain
IC= 0.5A ; VCE= 5V
10.5
4
Current-Gain—Bandwidth Product
Output Capacitance
MHz
pF
IC= 0.1A; VCE= 5V; ftest=1.0MHz
IE= 0; VCB= 10V; ftest=0.1MHz
IC= 2A , IB1= 1A; LB= 12μH
COB
50
Fall Time
0.65
1.0
μs
tf
2
isc Website：www.iscsemi.cn
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