MJ12003 [ISC]
isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管![MJ12003](http://pdffile.icpdf.com/pdf1/p00179/img/icpdf/MJ120_1010089_icpdf.jpg)
型号: | MJ12003 |
厂家: | ![]() |
描述: | isc Silicon NPN Power Transistor |
文件: | 总2页 (文件大小:74K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
MJ12003
DESCRIPTION
· Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 750V(Min)
·High Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for use in CRT deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
VCEX
Collector-Emitter Voltage
1500
VCEO(SUS) Collector-Emitter Voltage
750
V
VEBO
IC
Emitter-Base Voltage
5
V
Collector Current-Continuous
Base Current-Continuous
Emitter Current-Continuous
Collector Power Dissipation@TC=25℃
Junction Temperature
4
3
A
IB
A
IE
7
A
PC
TJ
100
150
-65~150
W
℃
℃
Storage Temperature
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance,Junction to Case
1.25
℃/W
Rth j-c
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
MJ12003
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
CONDITIONS
MIN
TYP. MAX UNIT
VCEO(SUS)
IC=50mA ; IB=0
750
V
IC= 3A; IB= 1.2A
IC= 3A; IB= 1.2A
VCE= 1500V; VBE= 0
VEB= 5V; IC=0
5.0
1.5
1.0
1.0
V
V
VCE
(sat)
VBE
(sat)
ICES
mA
mA
IEBO
hFE
fT
DC Current Gain
IC= 0.5A ; VCE= 5V
6
Current-Gain—Bandwidth Product
Output Capacitance
4
MHz
pF
IC= 0.1A; VCE= 5V; ftest=1.0MHz
IE= 0; VCB= 10V; ftest=0.1MHz
IC= 3A , IB1= 1.2A; LB= 8μH
COB
90
0.5
Fall Time
1.0
μs
tf
2
isc Website:www.iscsemi.cn
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