MJ12004 [ISC]
isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管
| 型号： | MJ12004 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
MJ12004
DESCRIPTION
· Collector-Emitter Voltage-
VCEX = 1500V
·Safe Operation Area
·Switching Time with Inductive Load
APPLICATIONS
·Designed for use in large screen color deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
VCEX
Collector-Emitter Voltage
1500
VCEO(SUS) Collector-Emitter Voltage
750
V
VEBO
IC
Emitter-Base Voltage
5
V
Collector Current-Continuous
Base Current-Continuous
Emitter Current-Continuous
Collector Power Dissipation@TC=25℃
Junction Temperature
5
4
A
IB
A
IE
9
A
PC
TJ
100
150
-65~150
W
℃
℃
Storage Temperature
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance,Junction to Case
1.25
℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
MJ12004
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
CONDITIONS
MIN
TYP. MAX UNIT
VCEO(SUS)
IC=50mA ; IB=0
750
V
IC=4.5A; IB= 1.8A
5.0
5.0
1.5
1.5
1.0
1.0
V
V
VCE
VCE
VBE
VBE
(sat)-1
(sat)-2
(sat)-1
(sat)-2
IC=3.5A; IB= 1.5A
IC= 4.5A; IB= 1.8A
V
IC=3.5A; IB= 1.5A
V
ICES
VCE= 1500V; VBE= 0
VEB= 5V; IC=0
mA
mA
IEBO
hFE
fT
Emitter Cutoff Current
DC Current Gain
IC= 0.5A ; VCE= 5V
12
4
Current-Gain—Bandwidth Product
Output Capacitance
MHz
pF
IC= 0.1A; VCE= 5V; ftest=1.0MHz
IE= 0; VCB= 10V; ftest=0.1MHz
IC=4.5A , IB1=1.8A; LB=8μH
COB
125
0.4
Fall Time
1.0
μs
tf
2
isc Website：www.iscsemi.cn
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