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MJ12022 [ISC]

isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管
MJ12022
型号： MJ12022
厂家： INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述：

isc Silicon NPN Power Transistor
ISC的硅NPN功率晶体管

晶体 晶体管
文件： 总2页 (文件大小：78K)
中文：  中文翻译
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INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
MJ12022  
DESCRIPTION  
·Collector-Emitter Sustaining Voltage-  
: VCEO(SUS) = 450V(Min)  
·Fast Turn-Off Time  
APPLICATIONS  
·Designed for high resolution video systems, such as : high  
density graphic displays, data terminals, video scanners.  
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)  
SYMBOL  
PARAMETER  
VALUE  
850  
450  
6
UNIT  
V
VCEV  
Collector-Emitter Voltage  
VCEO(SUS) Collector-Emitter Voltage  
V
VEBO  
IC  
ICM  
IB  
Emitter-Base Voltage  
V
Collector Current-Continuous  
Collector Current-Peak  
Base Current-Continuous  
Base Current-Peak  
15  
A
20  
A
10  
A
IBM  
PC  
TJ  
15  
A
Collector Power Dissipation@TC=25℃  
Junction Temperature  
175  
200  
-65~200  
W
℃
℃
Storage Temperature  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal Resistance,Junction to Case  
1.0  
℃/W  
Rth j-c  
isc Website：www.iscsemi.cn  
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
MJ12022  
ELECTRICAL CHARACTERISTICS  
TC=25℃ unless otherwise specified  
SYMBOL  
PARAMETER  
Collector-Emitter Sustaining Voltage  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Collector Cutoff Current  
CONDITIONS  
MIN  
TYP. MAX UNIT  
VCEO(SUS)  
IC=100mA ; IB=0  
450  
V
IC= 10A; IB= 2A  
1.2  
1.5  
V
VCE  
VBE  
(sat)  
IC= 10A; IB= 2A  
V
(sat)  
VCEV=850V;VBE(off)=1.5V  
0.25  
1.5  
ICEV  
mA  
mA  
mA  
V
CEV=850V;VBE =1.5V;TC=100℃  
(off)  
ICER  
IEBO  
hFE  
fT  
Collector Cutoff Current  
VCE= 850V; RBE= 50Ω,TC= 100℃  
VEB= 6V; IC=0  
2.5  
1.0  
Emitter Cutoff Current  
DC Current Gain  
IC= 15A ; VCE= 5V  
5
Current-Gain—Bandwidth Product  
Output Capacitance  
15  
MHz  
pF  
IC= 1.3A; VCE= 10V; ftest=1MHz  
IE= 0; VCB= 10V; ftest=1kHz  
COB  
400  
Switching times;Inductive Load  
Storage Time  
ts  
820  
100  
1800  
300  
ns  
ns  
IC= 10A , VCC= 120V; IB1= 2A;  
PW= 8μs; VBE(off)= 4V  
Duty Cycle≤2.0%  
Fall Time  
tf  
2
isc Website：www.iscsemi.cn  

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