MJ12005 [ISC]
isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管
| 型号： | MJ12005 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：63K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
MJ12005
DESCRIPTION
· Collector-Emitter Voltage-
VCEX = 1500V
·Safe Operation Area
APPLICATIONS
·Designed for use in deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
UNIT
V
VCEX
VEBO
IC
1500
5
8
V
Collector Current-Continuous
Base Current-Continuous
Emitter Current-Continuous
Collector Power Dissipation@TC=25℃
Junction Temperature
A
IB
4
A
IE
12
A
PC
TJ
100
150
-65~150
W
℃
℃
Storage Temperature
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance,Junction to Case
1.25
℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
MJ12005
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
CONDITIONS
MIN
TYP. MAX UNIT
VCEO(SUS)
IC=50mA ; IB=0
750
V
IC=5A; IB=1A
5.0
1.5
V
V
VCE
(sat)
IC=5A; IB=1A
VBE
(sat)
ICES
VCE= 1500V; VBE= 0
VEB= 5V; IC=0
0．25
0．1
mA
mA
IEBO
hFE
tf
DC Current Gain
IC= 0.5A ; VCE= 5V
IC=5A , IB1=1A; LB=8μH
12
Fall Time
0.4
1.0
μs
2
isc Website：www.iscsemi.cn
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