BDX64B [ISC]
isc Silicon PNP Darlington Power Transistor; ISC的硅PNP达林顿功率晶体管
| 型号： | BDX64B |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon PNP Darlington Power Transistor |
| 文件： | 总2页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistor
BDX64/A/B/C
DESCRIPTION
·Collector Current -IC= -12A
·High DC Current Gain-hFE= 1000(Min)@ IC= -5A
·Complement to Type BDX65/A/B/C
APPLICATIONS
·Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
-80
UNIT
BDX64
BDX64A
BDX64B
BDX64C
BDX64
-100
-120
-140
-60
Collector-Base
Voltage
VCBO
V
BDX64A
BDX64B
BDX64C
-80
Collector-Emitter
Voltage
VCEO
V
-100
-120
-5
VEBO
IC
ICM
IB
Emitter-Base Voltage
V
A
Collector Current-Continuous
Collector Current-Peak
-12
-16
A
Base Current-Continuous
-0.2
117
A
Collector Power Dissipation
PC
TJ
W
℃
℃
@ TC=25℃
Junction Temperature
200
Storage Temperature Range
-65~200
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance, Junction to Case
1.5
℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistor
BDX64/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
-60
TYP. MAX UNIT
BDX64
BDX64A
BDX64B
BDX64C
-80
Collector-Emitter
Sustaining Voltage
VCEO(SUS)
IC= -100mA ;IB=0
V
-100
-120
VCE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
C-E Diode Forward Voltage
Collector Cutoff Current
Collector Cutoff Current
BDX64
IC= -5A; IB= -20mA
IC= -5A ; VCE= -3V
-2
V
V
-2.5
-1.8
-0.2
-0.4
VBE(
)
on
VECF
IF= -5A
V
ICEO
ICBO
VCE= 1/2VCEOmax; IB= 0
VCB= VCBOmax;IE= 0
VCB= -40V;IE= 0;TJ= 200℃
VCB= -50V;IE= 0;TJ= 200℃
VCB= -60V;IE= 0;TJ= 200℃
mA
mA
BDX64A
Collector Cutoff Current
BDX64B
ICBO
-3
-5
mA
mA
BDX64C
Emitter Cutoff Current
DC Current Gain
VCB= -70V;IE= 0;TJ= 200℃
IEBO
hFE-1
hFE-2
hFE-3
COB
VEB= -5V; IC=0
IC= -1A ; VCE= -3V
1500
DC Current Gain
IC= -5A ; VCE= -3V
1000
DC Current Gain
IC= -12A ; VCE= -3V
IE= 0 ; VCB= -10V; ftest= 1MHz
750
200
Output Capacitance
pF
Switching times
Turn-on Time
Turn-off Time
1
μs
μs
ton
toff
IC= -5A; IB1= -IB2= -20mA
2.5
2
isc Website：www.iscsemi.cn
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