BDX64C [SAVANTIC]
Silicon PNP Power Transistors; 硅PNP功率晶体管
| 型号： | BDX64C |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon PNP Power Transistors |
| 文件： | 总3页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
BDX64C
DESCRIPTION
·With TO-3 package
·DARLINGTON
·Complement to type BDX65C
APPLICATIONS
·Designed for power amplification and
switching applications.
PINNING (See Fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Fig.1 simplified outline (TO-3) and symbol
3
Collector
Absolute maximum ratings(Ta=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
-120
-120
-5
UNIT
V
Open base
V
Open collector
V
-12
A
ICM
Collector current(peak)
Base current
-16
A
IB
-0.2
A
PT
Total power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
117
W
ꢀ
Tj
-55~200
-55~200
Tstg
ꢀ
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal resistance from junction to case
1.5
ꢀ/W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
BDX64C
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat
VBE
PARAMETER
CONDITIONS
MIN
TYP. MAX UNIT
Collector-emitter sustaining voltage IC=-0.1A ; IB=0;L=25mH
Collector-emitter saturation voltage IC=-5A ;IB=-20mA
-120
V
-2
V
V
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Diode forward voltage
DC current gain
IC=-5A;VCE=-3V
-2.5
VCB=-120V; IE=0
TC=150ꢀ
-0.2
-2
ICBO
mA
mA
mA
V
ICEO
VCE=-60V; IB=0
VEB=-5V; IC=0
-1
-5
IEBO
VF
IF=-5A
-1.8
hFE-1
hFE-2
hFE-3
fT
IC=-1A ; VCE=-3V
IC=-5A ; VCE=-3V
IC=-12A ; VCE=-3V
IC=-5A ; VCE=-3V;f=1MHz
1500
DC current gain
1000
DC current gain
750
7
Transition frequency
MHz
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
BDX64C
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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