BDX65 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | BDX65 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BDX65B
DESCRIPTION
·With TO-3 package
·DARLINGTON
·Complement to type BDX64B
APPLICATIONS
·Designed for power amplification and
switching applications.
PINNING (See Fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
3
Absolute maximum ratings(Ta=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
120
UNIT
V
Open base
100
V
Open collector
5
V
12
A
ICM
Collector current(peak)
Base current
16
A
IB
0.2
A
PT
Total power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
117
W
ꢀ
Tj
-55~200
-55~200
Tstg
ꢀ
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal resistance from junction to case
1.5
ꢀ/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BDX65B
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat
VBE
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Collector-emitter sustaining voltage IC=0.1A ; IB=0;L=25mH
Collector-emitter saturation voltage IC=5A ;IB=20mA
100
2
3
V
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Diode forward voltage
DC current gain
IC=5A;VCE=3V
V
VCB=100V; IE=0
TC=150ꢀ
0.4
3
ICBO
mA
mA
mA
V
ICEO
VCE=50V; IB=0
VEB=5V; IC=0
IF=3A
1
5
IEBO
VF
1.8
hFE-1
hFE-2
hFE-3
fT
IC=1A ; VCE=3V
IC=5A ; VCE=3V
IC=10A ; VCE=3V
IC=5A ; VCE=3V
1500
DC current gain
1000
DC current gain
1500
7
Transition frequency
MHz
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BDX65B
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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