BDX65A [COMSET]
NPN SILICON DARLINGTONS; NPN硅DARLINGTONS
| 型号： | BDX65A |
| 厂家： | 
COMSET SEMICONDUCTOR |
| 描述： | NPN SILICON DARLINGTONS |
| 文件： | 总4页 (文件大小：157K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN SILICON DARLINGTONS
General purpose darlingtons designed for power amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
BDX65
60
80
100
120
80
BDX65A
BDX65B
BDX65C
BDX65
Collector-Emitter Voltage
VCEO
V
BDX65A
BDX65B
BDX65C
100
120
140
Collector-BaseVoltage
Emitter-Base Voltage
VCBO
V
V
BDX65
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C
BDX65
VEBO
5.0
12
IC(RMS)
Collector Current
IC
A
BDX65A
BDX65B
BDX65C
16
ICM
BDX65
BDX65A
BDX65B
BDX65C
BDX65
Base Current
0.2
IB
A
Watts
W/°C
BDX65A
BDX65B
BDX65C
Power Dissipation
@ TC = 25°
PT
117
BDX65
Junction Temperature
Storage Temperature
TJ
TS
BDX65A
BDX65B
BDX65C
-55 to +200
°C
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THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
BDX65
BDX65A
BDX65B
BDX65C
Thermal Resistance, Junction to Case
RthJ-C
1.5
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Test Condition(s)
Symbol
Ratings
Min Typ Mx Unit
BDX65
BDX65A
60
80
-
-
-
-
-
-
-
-
Collector-Emitter
Breakdown Voltage (*)
IC=0.1 A, IB=0, L=25mH
V
VCEO(SUS)
BDX65B 100
BDX65C 120
VCE=30 V
VCE=40 V
VCE=50 V
VCE=60 V
BDX65
-
-
-
-
-
-
-
-
Collector Cutoff Current
Emitter Cutoff Current
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C
1
mA
mA
ICEO
VBE=5 V
-
-
5.0
IEBO
VCBO=60 V
VCBO=40 V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.4
3
BDX65
T
CASE=200°C
VCBO=50 V
VCBO=80 V
0.4
3
BDX65A
BDX65B
BDX65C
Collector-Base Cutoff
Current
T
CASE=200°C
-
ICBO
VCBO=100 V
VCBO=60 V
TCASE=200°C
0.4
3
VCBO=120 V
0.4
3
VCBO=70 V
TCASE=200°
-
BDX65
Collector-Emitter saturation
Voltage (*)
BDX65A
BDX65B
BDX65C
BDX65
IC=5.0 A, IB=20 mA
-
-
-
2
-
V
V
VCE(SAT)
Forward Voltage (pulse
method)
BDX65A
BDX65B
BDX65C
IF=3 A
1.8
VF
Page 2 of 4
BDX65
Base-Emitter Voltage (*)
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C
IC=5.0 A, VCE=3V
VCE=3 V, IC=5 A
-
-
50
7
2.5
V
VBE
fhfe
fT
-
Cut-off frequency
-
-
-
-
-
kHz
MHz
VCE=3 V, IC=5 A, f=1 MHz
VCE=3 V, IC=1 A
-
Transition Frequency
-
1000
-
3300
-
D.C. current gain (*)
VCE=3 V, IC=5 A
-
hFE
VCE=3 V, IC=10 A
3700
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
(1) collector-Emitter voltage limited et VCEci = V
rated by
an auxiliary circuit
MECHANICAL DATA CASE TO-3
DIMENSIONS
mm
inches
1,004
1,53
1,18
0,68
0,43
0,46
0,34
0,6
A
B
C
D
E
G
H
L
25,51
38,93
30,12
17,25
10,89
11,62
8,54
1,55
19,47
1
M
N
P
0,77
0,04
0,16
4,06
Pin 1 :
Pin 2 :
Case :
Base
Emitter
Collector
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