BDX64_12 [COMSET]
PNP SILICON DARLINGTON POWER TRANSISTOR; PNP硅达林顿功率晶体管
| 型号： | BDX64_12 |
| 厂家： | 
COMSET SEMICONDUCTOR |
| 描述： | PNP SILICON DARLINGTON POWER TRANSISTOR |
| 文件： | 总4页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BDX64 – A – B – C
PNP SILICON DARLINGTON POWER TRANSISTOR
The BDX64, BDX64A, BDX64B and BDX64C are mounted in TO-3 metal package.
High current power darlingtons designed for power amplification and switching applications.
The complementary NPN are BDX65, BDX65A, BDX65B, BDX65C.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
Ratings
Value
Unit
BDX64
-60
-80
-100
-120
-60
BDX64A
BDX64B
BDX64C
BDX64
BDX64A
BDX64B
BDX64C
Collector-Emitter Voltage
Collector-EmitterVoltage
V
-80
VCEV
VBE=-1.5 V
V
-100
-120
-5.0
-12
VEBO
IC
Emitter-Base Voltage
Collector Current
V
A
IC(RMS)
ICM
-16
IB
Base Current
0.2
A
PT
TJ
TS
Power Dissipation
Junction Temperature
Storage Temperature
@ TC = 25°
117
W
-55 to +200
°C
THERMAL CHARACTERISTICS
Symbol
RthJ-C
Ratings
Value
Unit
Thermal Resistance, Junction to Case
1.5
°C/W
24/10/2012
COMSET SEMICONDUCTORS
1 | 4
BDX64 – A – B – C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
VCEO(SUS)
Ratings
Test Condition(s)
Min Typ Max Unit
BDX64
-60
-80
-100
-120
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IC=-0.1 A
IB=0
L=25mH
BDX64A
BDX64B
BDX64C
BDX64
BDX64A
BDX64B
BDX64C
BDX64
Collector-Emitter Breakdown
Voltage (*)
V
VCE=-30 V
VCE=-40 V
VCE=-50 V
VCE=-60 V
ICEO
Collector Cutoff Current
Emitter Cutoff Current
-1.0
-5.0
mA
mA
BDX64A
BDX64B
BDX64C
IEBO
VBE=-5 V
-
-
V
CBO=-60 V
VCBO=-40 V
CASE=200°C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.2
2
BDX64
T
VCBO=-80 V
0.2
2
BDX64A
BDX64B
BDX64C
VCBO=-50 V
T
CASE=200°C
ICBO
Collector-Base Cutoff Current
-
VCBO=-100 V
0.2
2
VCBO=-60 V
TCASE=200°C
VCBO=-120 V
0.2
2
VCBO=-70 V
TCASE=200°
-
-
BDX64
BDX64A
BDX64B
BDX64C
BDX64
BDX64A
BDX64B
BDX64C
BDX64
Collector-Emitter saturation
Voltage (*)
IC=-5.0 A
IB=-20 mA
VCE(SAT)
-
-
-
-2
-
V
V
V
Forward Voltage (pulse
method)
VF
IF=5 A
1.8
-
BDX64A
BDX64B
BDX64C
IC=-5.0 A
VCE=-3V
VBE
Base-Emitter Voltage (*)
-2.5
24/10/2012
COMSET SEMICONDUCTORS
2 | 4
BDX64 – A – B – C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Fhfe
Ratings
Test Condition(s)
Min Typ Max Unit
BDX64
BDX64A
BDX64B
BDX64C
BDX64
BDX64A
BDX64B
BDX64C
BDX64
-VCE=3 V
-IC=5 A
Cut-off frequency
-
80
7
-
-
-
-
-
kHz
VCE=-3 V
IC=-5 A
f=1 MHz
fT
Transition Frequency
-
MHz
BDX64A
BDX64B
BDX64C
BDX64
-VCE=-3 V
-IC=-1 A
-
1000
-
1500
-
BDX64A
BDX64B
BDX64C
BDX64
-VCE=-3 V
-IC=-5 A
hFE
D.C. current gain (*)
-
BDX64A
BDX64B
BDX64C
-VCE=-3 V
-IC=-12 A
750
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
24/10/2012
COMSET SEMICONDUCTORS
3 | 4
BDX64 – A – B – C
MECHANICAL DATA CASE TO-3
DIMENSIONS (mm)
min
max
A
B
C
D
F
11 13.10
0.97
1.15
1.65
8.92
20
1.5
8.32
19
G
N
P
R
U
V
10.70
11.1
16.50 17.20
25
4
26
4.09
38.50 39.30
30 30.30
Pin 1 :
Pin 2 :
Case :
Base
Emitter
Collector
Revised September 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
www.comsetsemi.com
24/10/2012
info@comsetsemi.com
COMSET SEMICONDUCTORS
4 | 4
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