2SD897 [ISC]
Silicon NPN Power Transistor; 硅NPN功率晶体管
| 型号： | 2SD897 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：193K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD897
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·High Switching Speed
·Low Collector Saturation Voltage-
: VCE(sat)= 5.0V(Max.)@ IC= 1A
·Built-in Damper Diode
APPLICATIONS
·Designed for use in color TV deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
1500
600
UNIT
V
V
6
V
Collector Current- Cotinuous
Collector Current- Peak
Base Current- Continuous
1.5
A
ICM
5.0
A
IB
0.8
A
Collector Power Dissipation
@ TC= 25℃
PC
50
W
℃
℃
TJ
Junction Temperature
150
Storage Temperature Range
-65~150
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance, Junction to Case
2.5
℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD897
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
CONDITIONS
MIN
TYP. MAX UNIT
VEBO
IE= 200mA; IC= 0
6.0
V
IC= 1A; IB= 0.2A
IC= 1A; IB= 0.2A
VCE= 1500V; RBE= 0
IC= 0.5A; VCE= 5V
IF= 2A
5.0
1.5
500
V
V
VCE
(sat)
VBE
(sat)
ICES
μA
hFE
VECF
fT
DC Current Gain
8
C-E Diode Forward Voltage
Current-Gain—Bandwidth Product
Fall Time
2.5
1.0
V
IC= 0.1A; VC= 0V
IC= 0.8A, IB1(end)= 0.16A
3
MHz
μs
tf
2
isc Website：www.iscsemi.cn
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