2SD907 [ISC]
Silicon NPN Power Transistor; 硅NPN功率晶体管
| 型号： | 2SD907 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：221K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD907
DESCRIPTION
·High Collector Current
·Good Linearity of hFE
·High Reliability
·Wide Area of Safe Operation
APPLICATIONS
·Audio amplifier
·Series regulators
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base voltage
VALUE
UNIT
V
80
80
V
7
V
Collector Current-Continuous
Base Current-Continuous
10
A
IB
1.5
A
Collector Power Dissipation
@ TC=25℃
PC
80
W
℃
℃
TJ
Junction Temperature
150
-55~150
Storage Temperature Range
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance,Junction to Case
1.56
℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD907
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
PARAMETER
CONDITIONS
MIN
80
80
7
TYP. MAX UNIT
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
IC= 10mA; IB= 0
V
V
V
IC= 0.1mA; IE= 0
IE= 0.1mA; IC= 0
IC= 5A; IB= 0.5A
IC= 5A; IB= 0.5A
VCB= 80V; IE= 0
VEB= 7V; IC= 0
1.2
2.0
0.1
0.1
V
V
VCE
VBE
(sat)
(sat)
ICBO
mA
mA
IEBO
Emitter Cutoff Current
hFE
DC Current Gain
IC= 2A; VCE= 5
40
Switching times
Turn-on Time
1.0
2.0
1.0
μs
μs
μs
ton
tstg
tf
IC= 5A; IB1= -IB2= 0.5A
RL= 5Ω; PW=20μs;
Duty Cycle≤2%
Storage Time
Fall Time
2
isc Website：www.iscsemi.cn
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