2SD905 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SD905 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：116K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD905
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·For high voltage power switching TV
horizontal deflection output applications
PINNING(see Fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Fig.1 simplified outline (TO-3) and symbol
3
Collector
Absolute maximum ratings(Ta=ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
1400
650
5
UNIT
V
Open base
V
Open collector
V
8
A
ICM
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
10
A
PC
TC=25ꢀ
50
W
ꢀ
Tj
150
-45~150
Tstg
ꢀ
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD905
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)EBO
VCEsat
VBEsat
ICES
PARAMETER
CONDITIONS
MIN
650
5
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=10mA ;RBE=∞
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
IE=10mA ; IC=0
IC=8A;IB=1.5A
V
10
1.5
0.5
0.5
36
V
IC=8A;IB=1.5A
V
VCE=1400V ; RBE=0
VEB=5V; IC=0
mA
mA
IEBO
hFE
DC current gain
IC=1A ; VCE=5V
IC=6.8A; IB1=1.1A;LB=0
8
tf
Fall time
1.0
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD905
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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