2SD904 [ISC]
Silicon NPN Power Transistor; 硅NPN功率晶体管
| 型号： | 2SD904 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：192K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD904
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·Low Collector Saturation Voltage-
: VCE(sat)= 5.0V(Max.)@ IC= 3A
·Built-in Damper Diode
APPLICATIONS
·Designed for color TV horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
UNIT
1500
V
V
V
A
A
600
6
Collector Current- Continuous
Collector Current- Peak
7
10
ICM
Collector Power Dissipation
@ Ta= 25℃
3
PC
W
Collector Power Dissipation
@ TC= 25℃
50
TJ
Junction Temperature
150
-40~150
℃
℃
Storage Temperature Range
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD904
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
V(BR)EBO
PARAMETER
Collector-Emitter Sustaining Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
CONDITIONS
IC= 100mA; IB= 0, L= 35mH
IE= 200mA; IC= 0
IC= 3A; IB= 0.75A
IC= 3A; IB= 0.6A
VCB= 1500V; VBE= 0
VEB= 4V; IC= 0
MIN
600
6
TYP. MAX UNIT
V
V
5.0
1.6
1.0
100
V
V
VCE
(sat)
VBE
(sat)
ICES
mA
mA
IEBO
hFE-1
hFE-2
VECF
Collector Cutoff Current
44
8
DC Current Gain
IC= 1A; VCE= 5V
IC= 4A; VCE= 5V
IF= 4A
DC Current Gain
5
10
C-E Diode Forward Voltage
2.0
V
2
isc Website：www.iscsemi.cn
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