2SD898 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SD898 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：140K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD898
DESCRIPTION
·With TO-3 package
·Built-in damper diode
·High voltage ,high power dissipation
·Wide area of safe operation
APPLICATIONS
·For TV horizontal deflection output
applications
PINNING(see fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Fig.1 simplified outline (TO-3) and symbol
3
Collector
Absolute maximum ratings(Ta=℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
1500
1500
6
UNIT
V
Open emitter
Open base
V
Open collector
V
3
A
ICM
Collector current-peak
Total power dissipation
Junction temperature
Storage temperature
3.5
A
PT
TC=25℃
50
W
℃
℃
Tj
150
Tstg
-55~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD898
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)EBO
VCEsat
VBEsat
ICES
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Emitter-base breakdown voltage
IE=200mA; IC=0;
6
Collector-emitter saturation voltage IC=2.5A;IB=0.8 A
5.0
1.5
0.5
200
40
V
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=2.5A;IB=0.8 A
VCE=1500V;RBE=0
VEB=6V;IC=0
V
mA
mA
IEBO
50
10
hFE
IC=0.5A ; VCE=5V
IF=3A
VF
Diode forward voltage
2.2
V
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD898
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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