2SD2558 [ISC]
Silicon NPN Darlington Power Transistor; 硅NPN达林顿功率晶体管
| 型号： | 2SD2558 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Darlington Power Transistor |
| 文件： | 总2页 (文件大小：226K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
2SD2558
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min)
·High DC Current Gain-
: hFE= 1500( Min.) @(IC= 1A, VCE= 5V)
·Low Collector Saturation Voltage-
: VCE(sat)= 1.5V(Max)@ (IC= 1A, IB= 5mA)
APPLICATIONS
·Designed for series regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
UNIT
V
200
200
V
6
V
Collector Current-Continuous
Base Current-Continuous
5
2
A
IB
A
Collector Power Dissipation
@TC=25℃
PC
60
W
℃
℃
Junction Temperature
Storage Temperature
150
-55~150
TJ
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
2SD2558
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector Cutoff current
CONDITIONS
MIN
TYP. MAX UNIT
V(BR)CEO
IC= 10mA, IB= 0
200
V
IC= 1A ,IB= 5mA
VCB= 200V, IE= 0
VEB= 6V, IC= 0
1.5
0.1
V
VCE
(sat)
ICBO
mA
mA
IEBO
Emitter Cutoff current
5.0
hFE
COB
fT
DC Current Gain
IC= 1A; VCE= 5V
1500
6500
Output Capacitance
110
15
pF
IE= 0; VCB= 10V; ftest= 1MHz
IE= -0.5A; VCE= 10V
Current-Gain—Bandwidth Product
MHz
2
isc Website：www.iscsemi.cn
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