2SD2561 [SANKEN]
Silicon NPN Triple Diffused Planar Transistor(Audio, Series Regulator and General Purpose); 硅NPN三重扩散平面晶体管（音频，系列稳压器和通用）
| 型号： | 2SD2561 |
| 厂家： | 
SANKEN ELECTRIC |
| 描述： | Silicon NPN Triple Diffused Planar Transistor(Audio, Series Regulator and General Purpose) |
| 文件： | 总1页 (文件大小：27K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
C
E
Equivalent circuit
B
Darlington 2 S D2 5 6 1
(70Ω)
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1648)
Absolute maximum ratings (Ta=25°C) Electrical Characteristics
Application : Audio, Series Regulator and General Purpose
(Ta=25°C)
■
■
External Dimensions MT-200
Symbol
ICBO
Symbol
VCBO
VCEO
VEBO
IC
Conditions
2SD2561
2SD2561
Unit
µA
µA
V
Unit
±0.2
6.0
±0.3
±0.2
36.4
VCB=150V
100max
100max
150min
5000min
2.5max
3.0max
70typ
150
V
24.4
2.1
IEBO
VEB=5V
±0.1
2-ø3.2
150
V
9
V(BR)CEO
hFE
IC=30mA
5
V
VCE=4V, IC=10A
IC=10A, IB=10mA
IC=10A, IB=10mA
VCE=12V, IE=–2A
VCB=10V, f=1MHz
17
1
A
a
b
V
V
VCE(sat)
VBE(sat)
fT
IB
A
PC
200(Tc=25°C)
150
W
°C
°C
2
MHz
pF
Tj
3
+0.2
-0.1
0.65
+0.2
-0.1
COB
Tstg
120typ
–55 to +150
1.05
+0.3
-0.1
hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
■Typical Switching Characteristics (Common Emitter)
3.0
±0.1
±0.1
5.45
5.45
B
C
E
Weight : Approx 18.4g
a. Type No.
VCC
(V)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(µs)
tstg
(µs)
tf
(µs)
b. Lot No.
40
4
10
10
–5
10
–10
0.8typ
4.0typ
1.2typ
–
–
–
IC VBE Temperature Characteristics (Typical)
IC VCE Characteristics (Typical)
VCE(sat) IB Characteristics (Typical)
(VCE=4V)
10mA
17
3
17
15
15
10
5
2
10
IC=.15A
IC=.10A
0.5mA
1
0
IC=.5A
5
IB=0.3mA
0
0
0
2
4
6
0.2
0.5
1
5
10
50 100 200
0
1
2
2.6
Collector-Emitter Voltage VCE(V)
Base Current IB(mA)
Base-Emittor Voltage VBE(V)
–
–
–
j-a t Characteristics
hFE IC Characteristics (Typical)
hFE IC Temperature Characteristics (Typical)
θ
(VCE=4V)
(VCE=4V)
2
1
50000
50000
Typ
10000
5000
10000
5000
0.5
1000
500
1000
500
0.1
1
10
100
Time t(ms)
1000 2000
02
0.5
1
5
10
17
02
0.5
1
5
10
17
Collector Current IC(A)
Collector Current IC(A)
–
fT IE Characteristics (Typical)
Safe Operating Area (Single Pulse)
–
Pc Ta Derating
(VCE=12V)
200
160
120
80
80
60
40
20
0
40
Without Heatsink
5
0
–0.02
–0.1
–1
–10
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
Emitter Current IE(A)
159
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