2SD2560P [ISC]
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| 型号： | 2SD2560P |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | 暂无描述 晶体 晶体管 开关 局域网 |
| 文件： | 总3页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Darlington Power Transistors
2SD2560
DESCRIPTION
·With TO-3PN package
·Complement to type 2SB1647
APPLICATIONS
·Audio ,regulator and general purpose
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-3PN) and symbol
3
Emitter
Absolute maximum ratings(Ta=℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
150
150
5
UNIT
V
Open emitter
Open base
V
Open collector
V
15
A
IB
Base current
1
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25℃
130
150
-55~150
W
℃
℃
Tj
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Darlington Power Transistors
2SD2560
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC=30mA ;IB=0
150
IC=10A ;IB=10mA
IC=10A ;IB=10mA
VCB=150V ;IE=0
VEB=5V; IC=0
2.5
3.0
V
V
100
100
μA
μA
IEBO
hFE
DC current gain
IC=10A ; VCE=4V
IE=0 ; VCB=10V;f=1MHz
IC=2A ; VCE=12V
5000
Cob
Output capacitance
120
70
pF
fT
Transition frequency
MHz
Switching times
ton
Turn-on time
0.8
4.0
1.2
μs
μs
μs
IC=10A;RL=4Ω
IB1=-IB2=10mA
ts
Storage time
Fall time
V
CC=40V
tf
hFE Classifications
O
P
Y
5000-12000
6500-20000 15000-30000
2
Inchange Semiconductor
Product Specification
Silicon NPN Darlington Power Transistors
2SD2560
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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