2SD2560Y [ALLEGRO]

Power Bipolar Transistor, 15A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN;
2SD2560Y
型号: 2SD2560Y
厂家: ALLEGRO MICROSYSTEMS    ALLEGRO MICROSYSTEMS
描述:

Power Bipolar Transistor, 15A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN

文件: 总1页 (文件大小:24K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
C
E
Equivalent circuit  
B
Darlington 2 S D2 5 6 0  
(70)  
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1647)  
Absolute maximum ratings (Ta=25°C) Electrical Characteristics  
Application : Audio, Series Regulator and General Purpose  
External Dimensions MT-100(TO3P)  
(Ta=25°C)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Symbol  
2SD2560  
100max  
100max  
150min  
5000min  
2.5max  
3.0max  
70typ  
2SD2560  
Unit  
Conditions  
Unit  
µA  
µA  
V
±0.2  
4.8  
±0.4  
15.6  
ICBO  
150  
V
VCB=150V  
±0.1  
2.0  
9.6  
IEBO  
150  
V
VEB=5V  
V(BR)CEO  
hFE  
IC=30mA  
5
V
a
b
±0.1  
ø3.2  
VCE=4V, IC=10A  
IC=10A, IB=10mA  
IC=10A, IB=10mA  
VCE=12V, IE=2A  
VCB=10V, f=1MHz  
15  
1
A
IB  
VCE(sat)  
VBE(sat)  
fT  
V
V
A
PC  
130(Tc=25°C)  
150  
W
°C  
°C  
2
Tj  
MHz  
pF  
3
Tstg  
COB  
120typ  
–55to+150  
+0.2  
-0.1  
+0.2  
-0.1  
1.05  
0.65  
1.4  
hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)  
Typical Switching Characteristics (Common Emitter)  
±0.1  
±0.1  
5.45  
5.45  
B
C
E
Weight : Approx 6.0g  
a. Type No.  
VCC  
(V)  
RL  
()  
IC  
(A)  
VBB1  
(V)  
VBB2  
(V)  
IB1  
(mA)  
IB2  
(mA)  
ton  
(µs)  
tstg  
(µs)  
tf  
(µs)  
b. Lot No.  
40  
4
10  
10  
–5  
10  
–10  
0.8typ  
4.0typ  
1.2typ  
IC VBE Temperature Characteristics (Typical)  
IC VCE Characteristics (Typical)  
VCE(sat) IB Characteristics (Typical)  
(VCE=4V)  
10mA  
3mA  
15  
15  
3
10  
2
10  
0.5mA  
IC=.15A  
IC=.10A  
5
1
0
IC=.5A  
5
IB=0.3mA  
0
0
0
2
4
6
0.2  
0.5  
1
5
10  
50 100 200  
0
1
2
2.2  
Collector-Emitter Voltage VCE(V)  
Base Current IB(mA)  
Base-Emittor Voltage VBE(V)  
j-a t Characteristics  
hFE IC Temperature Characteristics (Typical)  
hFE IC Characteristics (Typical)  
θ
(VCE=4V)  
(VCE=4V)  
3.0  
50000  
50000  
Typ  
1.0  
0.5  
10000  
5000  
10000  
5000  
1000  
500  
1000  
500  
0.1  
1
10  
100  
Time t(ms)  
1000 2000  
02  
0.5  
1
5
10 15  
02  
0.5  
1
5
10 15  
Collector Current IC(A)  
Collector Current IC(A)  
Safe Operating Area (Single Pulse)  
fT IE Characteristics (Typical)  
Pc Ta Derating  
(VCE=12V)  
130  
100  
80  
60  
40  
20  
50  
Without Heatsink  
3.5  
0
0
–0.02 –0.05 –01  
–0.5 –1  
–5 –10  
0
25  
50  
75  
100  
125  
150  
Ambient Temperature Ta(˚C)  
Emitter Current IE(A)  
158  

相关型号:

2SD2560_01

Silicon NPN Triple Diffused Planar Transistor
SANKEN

2SD2561

Silicon NPN Triple Diffused Planar Transistor(Audio, Series Regulator and General Purpose)
SANKEN

2SD2561

Silicon NPN Darlington Power Transistors
ISC

2SD2561O

暂无描述
SANKEN

2SD2561P

暂无描述
SANKEN

2SD2561P

暂无描述
ISC

2SD2561Y

Power Bipolar Transistor, 17A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT-200, 3 PIN
SANKEN

2SD2561Y

Transistor
ISC

2SD2561_01

Silicon NPN Triple Diffused Planar Transistor
SANKEN

2SD2562

Silicon NPN Darlington Power Transistor
ISC

2SD2562

Silicon NPN Triple Diffused Planar Transistor
SANKEN

2SD2562

Power Bipolar Transistor, 15A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PF, 3 PIN
ALLEGRO