2SD2559 [ISC]
Silicon NPN Power Transistor; 硅NPN功率晶体管
| 型号： | 2SD2559 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：227K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD2559
DESCRIPTION
·High Breakdown Voltage-
：VCBO= 1500V (Min)
·High Switching Speed
·Low Saturation Voltage
·Built-in Damper Diode
APPLICATIONS
·Designed for color TV horizontal deflection applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
UNIT
V
1500
600
V
5
V
Collector Current- Continuous
Collector Current- Pulse
Base Current- Continuous
8
16
A
ICM
A
IB
4
A
Collector Power Dissipation
@ TC=25℃
PC
50
W
℃
℃
TJ
Junction Temperature
150
-55~150
Storage Temperature Range
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD2559
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
CONDITIONS
MIN
TYP. MAX UNIT
V(BR)EBO
IE= 300mA ; IC= 0
5
V
IC= 6A; IB= 1.2A
IC= 6A; IB= 1.2A
VCB= 1500V; IE= 0
VEB= 5V; IC= 0
5.0
1.5
1.0
250
30
V
V
VCE
(sat)
VBE
(sat)
ICBO
mA
mA
IEBO
hFE-1
hFE-2
VECF
fT
Emitter Cutoff Current
83
10
5
DC Current Gain
IC= 1A; VCE= 5V
IC= 6A; VCE= 5V
IF= 6A
DC Current Gain
9
C-E Diode Forward Voltage
Current-Gain—Bandwidth Product
Output Capacitance
1.8
V
IC= 0.1A; VCE= 10V
IE= 0; VCB= 10V; ftest=1.0MHz
2
MHz
pF
COB
125
Switching Times
Storage Time
8.5
0.7
μs
μs
ts
ICP= 6A, IB1( )= 1.2A,
fH= 15.75kHz
end
Fall Time
tf
2
isc Website：www.iscsemi.cn
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