2SD1663 [ISC]
isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管
| 型号： | 2SD1663 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：99K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD1663
DESCRIPTION
·High Collector-Base Breakdown Voltage-
: V(BR)CBO= 1500V (Min.)
·High Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCES
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector- Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
1500
1500
700
UNIT
V
V
V
7.7
V
Collector Current-Continuous
Base Current-Continuous
5
A
IB
3
A
Collector Power Dissipation
@ TC=25℃
PC
80
W
℃
℃
TJ
Junction Temperature
150
Storage Temperature Range
-55~150
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD1663
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Emitter Cutoff Current
CONDITIONS
MIN
TYP. MAX UNIT
VCEO(SUS)
IC= 0.5A; L= 50mH
700
V
IC= 4.5A; IB= 2A
IC= 4.5A; IB= 2A
VEB= 7.7V; IC= 0
2.0
1.5
100
V
V
VCE
(sat)
VBE
(sat)
IEBO
μA
VCB= 750V; IE= 0
VCB= 1500V; IE= 0
50
1.0
μA
mA
ICBO
Collector Cutoff Current
hFE
DC Current Gain
IC= 1A; VCE= 5V
18
50
Switching times
Turn-On Time
1.0
3.0
0.5
μs
μs
μs
ton
tstg
tf
IC= 2.5A, IB1= 0.5A, IB2= -1A
Storage Time
Fall Time
hFE Classifications
Q
P
18-34
18-50
2
isc Website：www.iscsemi.cn
相关型号：
2SD1664-P-AB3-R
Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN
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