2SD1664 [WEITRON]
NPN Epitaxial Planar Transistors; NPN外延平面晶体管
| 型号： | 2SD1664 |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | NPN Epitaxial Planar Transistors |
| 文件： | 总5页 (文件大小：254K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD1664
NPN Epitaxial Planar Transistors
P b
Lead(Pb)-Free
1. BASE
2. COLLECTOR
1
3. EMITTER
2
3
Features:
* Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA)
SOT-89
ABSOLUTE MAXIMUM RATINGS (T =25˚C)
A
Rating
Symbol
Limits
Unit
V
V
Collector-Base Voltage
CBO
40
32
V
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
CEO
V
EBO
5.0
Collector Current
I
A
1.0
0.5
C
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
W
P
D
T
-55 to +150
-55 to +150
j
˚C
˚C
T
stg
ELECTRICAL CHARACTERISTICS(T =25˚C unless otherwise noted)
A
Min
Typ
Parameter
Symbol
Max
Unit
Collector-Base Breakdown Voltage
BV
BV
BV
40
-
-
V
V
CBO
CEO
EBO
CBO
EBO
I =50µA, I =0
C
E
Collector-Emitter Breakdown Voltage
I =1mA, I =0
32
5
-
-
-
-
-
-
-
C
B
Emitter-Base Breakdown Voltage
I =50µA, I =0
V
E
C
I
I
0.5
0.5
µA
µA
V
V
=20V, I =0
E
CB
-
=4V, I =0
EB
C
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2SD1664
ELECTRICAL CHARACTERISTICS (T =25˚C Unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
V =3V, I =100mA
h
82
-
-
-
390
0.4
-
FE
CE
C
Collector-Emitter Saturation Voltage
=0.5A, I =50mA
V
V
CE(sat)
I
C
B
DYNAMIC CHARACTERISTICS
Transition Frequency
f
MHz
pF
-
-
150
15
-
-
T
V =5V, I =50mA f=100MHz
CE
C
Output Capacitance
V =10V, I =0, f=1MHz
C
ob
CB
E
CLASSIFICATION OF h
FE
Rank
P
Q
R
82-180
DAP
120-270
DAQ
180-390
DAR
Range
Marking
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2SD1664
Typical Characteristics
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2SD1664
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2SD1664
SOT-89 Outline Dimensions
unit:mm
SOT-89
Dim
A
B
C
D
Min
Max
E
1.400
0.320
0.360
0.350
4.400
1.400
2.300
3.940
1.600
0.520
0.560
0.440
4.600
1.800
2.600
4.250
A
G
H
J
C
E
G
H
J
D
B
K
K
L
1.500 TYP
L
2.900
3.100
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