2SD1664 [KEXIN]
Medium Power Transistor; 中功率晶体管
| 型号： | 2SD1664 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | Medium Power Transistor |
| 文件： | 总3页 (文件大小：365K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
Medium Power Transistor
2SD1664
Features
Low VCE(sat)
Compliments to 2SB1132
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Symbol
VCBO
Rating
Unit
V
40
VCEO
32
V
VEBO
5
V
Collector Current
(DC)
1
A
IC
PW=20ms, duty=1/2
2
0.5
A
Collector Power Dissipation
Jumction temperature
PC *
Tj
W
150
Storage temperature Range
Tstg
-55 to +150
* mounted on a 40x40x0.7mm ceramic board.
Electrical Characteristics Ta = 25
Parameter
Symbol
ICBO
Testconditons
Min
Typ
Max
0.5
Unit
ìA
ìA
V
Collector Cut-off Current
VCB = 20V , IE = 0
VEB = 4V , IC = 0
Emitter Cut-off Current
IEBO
0.5
Collector-base Breakdown Voltage
Collector-emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
V(BR)CBO IC = 50uA , IE = 0
V(BR)CEO IC = 1mA , IB = 0
V(BR)EBO IE = 50uA
40
32
5
V
hFE
VCE = -3V , IC = -0.1A
82
390
0.4
Collector-emitter Saturation Voltage
Transition Frequency
VCE(sat) IC = 500mA , IB = 50mA
0.15
150
15
V
fT
VCE = 5V , IE = -50mA , f = 100MHz
VCB = 10V , IE = 0 , f = 1MHz
MHz
pF
Collector Output Capacitance
Cob
hFE Classification
DA
Q
Marking
Rank
hFE
P
R
82
180
120
270
180
390
1
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SMD Type
Transistors
2SD1664
Electrical Characteristics Curves
2
www.kexin.com.cn
SMD Type
Transistors
2SD1664
3
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