2SD1664 [SECOS]

NPN Silicon General Purpose Transistor; NPN硅通用晶体管
2SD1664
型号: 2SD1664
厂家: SECOS HALBLEITERTECHNOLOGIE GMBH    SECOS HALBLEITERTECHNOLOGIE GMBH
描述:

NPN Silicon General Purpose Transistor
NPN硅通用晶体管

晶体 晶体管
文件: 总3页 (文件大小:119K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2SD1664  
NPN Silicon  
Elektronische Bauelemente  
General Purpose Transistor  
R oH S C om pliant Product  
D
D1  
A
Features  
SOT-89  
b1  
1
b
Power dissipation  
PCM : 0.5 W (Tamb= 25oC)  
C
e
e1  
1.BASE  
Collector current  
ICM : 1 A  
Dimensions In Millimeters  
Dimensions In Inches  
2.COLLECTOR  
3.EMITTER  
Symbol  
Min  
Max  
Min  
Max  
1.400  
0.320  
0.360  
0.350  
4.400  
1.400  
2.300  
3.940  
1.600  
0.520  
0.560  
0.440  
4.600  
1.800  
2.600  
4.250  
0.055  
0.013  
0.014  
0.014  
0.173  
0.055  
0.091  
0.155  
0.063  
0.020  
0.022  
0.017  
0.181  
0.071  
0.102  
0.167  
A
b
Collector-base voltage  
V(BR)CBO : 40 V  
b1  
c
D
D1  
E
Operating & Storage junction Temperature  
O
O
E1  
e
Tj, Tstg : -55 C~ +150 C  
1.500TYP  
0.060TYP  
2.900  
0.900  
3.100  
1.100  
0.114  
0.035  
0.122  
0.043  
e1  
L
O
Electrical Characteristics( Tamb=25 C unless otherwise specified)  
Parameter  
Symbol  
Test Conditions  
Ic= 50­AˈI  
MIN  
40  
32  
5
TYP  
MAX  
UNIT  
V
Collector-base breakdown voltage  
V(BR)CBO  
E=0  
Collector-emitter breakdown voltage V(BR)CEO  
Ic= 1mAˈIB=0  
IE= 50­AˈIC=0  
VCB= 20 V, IE=0  
VEB= 4V, IC=0  
VCE= 3V, IC= 0.1A  
V
Emitter-base breakdown voltage  
Collector cut-off current  
Emitter cut-off current  
V(BR)EBO  
ICBO  
V
­A  
­A  
0.5  
0.5  
390  
0.4  
IEBO  
hFE  
82  
DC current gain  
Collector-emitter saturation voltage  
V
=
IC  
IB= 50mA  
V
CE(sat)  
500mA,  
VCE= 5V , IC= 50mA  
f=1MHz  
Transition frequency  
Output Capacitance  
MHz  
fT  
150  
15  
VCB= 10V, IE= 0  
f=1MHz  
pF  
Cob  
Classification of hFE  
Rank  
Range  
Marking  
P
Q
R
82-180  
120-270  
180-390  
DAP  
DAQ  
DAR  
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
01-Jun-2002 Rev. A  
Page 1 of 3  
2SD1664  
NPN Silicon  
General Purpose Transistor  
Elektronische Bauelemente  
ELECTRICAL CHARACTERISTIC CURVES  
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
01-Jun-2002 Rev. A  
Page 2 of 3  
2SD1664  
NPN Silicon  
General Purpose Transistor  
Elektronische Bauelemente  
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
01-Jun-2002 Rev. A  
Page 3 of 3  

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