2SD1664 [HTSEMI]
TRANSISTOR (NPN); 晶体管（ NPN ）
| 型号： | 2SD1664 |
| 厂家： | 
SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. |
| 描述： | TRANSISTOR (NPN) |
| 文件： | 总3页 (文件大小：747K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD1664
TRANSISTOR (NPN)
SOT-89
1. BASE
FEATURES
z
Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA)
Complements to 2SB1132
z
2. COLLECTOR
3. EMITTER
1
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
2
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Value
Units
3
40
V
32
V
5
V
Collector Current -Continuous
Collector power dissipation
Junction Temperature
1
A
PC
500
150
-55-150
mW
TJ
℃
Tstg
Storage Temperature
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
40
32
5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC=50μA, IE=0
V(BR)CEO IC=1mA, IB=0
V(BR)EBO IE=50μA, IC =0
V
V
ICBO
IEBO
hFE
VCB=20V, IE=0
VEB=4V, IC=0
0.5
0.5
390
0.4
μA
μA
Emitter cut-off current
DC current gain
VCE=3V, IC=100mA
82
Collector-emitter saturation voltage
Transition frequency
VCE(sat)
fT
IC=0.5A, IB=50mA
V
VCE=5V, IC=50mA, f=100MHz
VCB=10V, IE=0, f=1MHz
150
15
MHz
pF
Collector output capacitance
Cob
CLASSIFICATION OF hFE
Rank
P
Q
R
82-180
120-270
DAQ
180-390
Range
Marking
DAP
DAR
1
JinYu
semiconductor
www.htsemi.com
2SD1664
2
JinYu
semiconductor
www.htsemi.com
2SD1664
3
JinYu
semiconductor
www.htsemi.com
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