2SC2502 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SC2502 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2502
DESCRIPTION
·
·With TO-220C package
·High breakdown voltage
·High speed switching time
APPLICATIONS
·For use in high-voltage,high-speed ,power
switching in inductive circuit.
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
UNIT
V
500
Open base
400
V
Open collector
7
V
6
12
A
ICM
Collector current-peak
Base current
A
IB
2
A
PC
Collector dissipation
Junction temperature
Storage temperature
TC=25℃
50
W
℃
℃
Tj
150
-55~150
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Thermal resistance junction case
MAX
UNIT
Rth j-C
2.5
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2502
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat
VBEsat
ICEO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Collector-emitter sustaining voltage IC=100mA ; IB=0
Collector-emitter saturation voltage IC=3A; IB=0.3A
400
0.7
1.5
100
100
1
V
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
IC=3A; IB=0.3A
V
VCE=320V ;IB=0
VCB=500V ;IE=0
VEB=7V; IC=0
μA
μA
mA
ICBO
IEBO
hFE-1
IC=3A ; VCE=2V
IC=6A ; VCE=2V
IC=0.6A ; VCE=10V;f=1MHz
15
8
hFE-2
DC current gain
fT
Transition frequency
10
MHz
Switching times
ton
tstg
tf
Turn-on time
1.0
3.0
0.7
μs
μs
μs
IC=3A
IB1=-IB2=0.6A;
RL=10Ω,VCC=30V
Storage time
Fall time
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2502
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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