2SC2510A [TOSHIBA]
SILICON NPN EPITAXIAL PLANAR TYPE; NPN硅外延平面型
| 型号： | 2SC2510A |
| 厂家： | 
TOSHIBA |
| 描述： | SILICON NPN EPITAXIAL PLANAR TYPE |
| 文件： | 总4页 (文件大小：188K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC2510A
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
2SC2510A
2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS
(28V SUPPLY VOLTAGE USE)
Unit in mm
z
z
z
z
z
Specified 28V, 28MHz Characteristics
Output Power
Power Gain
: Po = 150W
(Min.)
PEP
: Gp = 12.2dB (Min.)
: η = 35% (Min.)
Collector Efficiency
C
Intermodulation Distortion: IMD = −30dB (Max.)
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
Collector-Base Voltage
SYMBOL
RATING
UNIT
V
60
60
V
V
CBO
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
CES
CEO
EBO
V
V
35
V
4
V
Collector Current
I
20
A
C
JEDEC
EIAJ
—
—
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
P
250
175
−65~175
W
°C
°C
C
T
j
TOSHIBA
Weight: 5.2g
2−13B1A
T
stg
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
MARKING
TOSHIBA
2SC2510
JAPAN
Dot
Lot No.
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2SC2510A
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
= 100mA, I = 0
MIN.
TYP.
MAX.
UNIT
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
V
I
I
I
35
55
4
—
—
—
—
—
—
—
—
V
V
V
(BR) CEO
(BR) CES
(BR) EBO
C
C
E
B
V
V
= 100mA, V = 0
EB
= 1mA, I = 0
C
h
FE
V
= 5V, I = 10A *
10
CE
C
V
= 28V, I = 0
CB
E
Collector Output Capacitance
C
—
450
600
pF
dB
ob
f = 1MHz
Power Gain
G
12.2
—
13.3
7
—
9
p
V
= 28V, f = 28.000MHz,
1
CC
f = 28.001MHz
Input Power
P
W
i
PEP
2
I
= 100mA
idle
Po = 150W
Collector Efficiency
Intermodulation Distortion
η
35
—
—
%
C
(Fig.)
PEP
IMD
—
—
−30
dB
1.4
−j0.9
Series Equivalent Input Impedance
Series Equivalent Output Impedance
Z
—
—
—
—
Ω
in
V
2
= 28V, f = 28.000MHz,
1
CC
f = 28.001MHz,
2.3
−j0.9
Po = 150W
PEP
Z
Ω
out
* Pulse Test:
Pulse Width ≤ 100μs, Duty Cycle ≤ 3%
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2SC2510A
Fig. Pi TEST CIRCUIT
CAUTION
These are only typical curves and devices are not necessarily guaranteed at these curves.
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2SC2510A
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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