2SC2512 [HITACHI]
Silicon NPN Triple Diffused; 硅NPN三重扩散
| 型号： | 2SC2512 |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon NPN Triple Diffused |
| 文件： | 总7页 (文件大小：35K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC2512
Silicon NPN Triple Diffused
Application
•
•
VHF Amplifier
VHF TV Tuner, Mixer
Outline
TO-92 (2)
1. Base
2. Emitter
3. Collector
3
2
1
2SC2512
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
30
20
V
3
V
50
mA
mW
°C
°C
Collector power dissipation
Junction temperature
Storage temperature
PC
300
Tj
150
Tstg
–55 to +150
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
30
20
3
—
—
V
IC = 10 µA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
—
—
—
—
V
V
IC = 1 mA, RBE = ∞
IE = 10 µA, IC = 0
Emitter to base breakdown
voltage
V(BR)EBO
Collector cutoff current
ICBO
—
—
—
—
0.5
1
µA
VCB = 10 V, IE = 0
Collector to emitter saturation VCE(sat)
voltage
V
IC = 20 mA, IB = 4 mA
DC current transfer ratio
hFE
30
—
—
—
VCE = 10 V, IC = 10 mA
Reverse transfer capacitance Cre
0.35
0.45
pF
VCB = 10 V, Emitter common,
f = 1 MHz
Gain bandwidth product
Base time constant
fT
600
—
900
—
—
MHz
ps
VCE = 10 V, IC = 10 mA
rbb’
•
CC
20
VCB = 10 V, IC = 5 mA,
f = 31.8 MHz
Conversion gain
CG
NF
16
20
—
dB
VCC = 12 V, IC = 2 mA,
fin = 200 MHz,
f
f
OSC = 260 MHz,
out = 60 MHz
Noise figure
—
3.8
5.5
dB
VCC = 12 V, IC = 2 mA,
OSC = 260 MHz, Rg = 50 Ω,
fin = 200 MHz
f
2
2SC2512
DC Current Transfer Ratio vs.
Collector Current
Maximum Collector Dissipation Curve
100
80
60
40
20
0
300
200
100
VCE = 10 V
1
2
5
10
20
50
0
50
100
150
Collector Current IC (mA)
Ambient Temperature Ta (°C)
Gain Bandwidth Product vs.
Collector Current
Reverse Transfer Capacitance vs.
Collector to Base Voltage
1,000
800
600
400
200
0
5
2
f = 1 MHz
VCE = 10 V
Emitter Common
1.0
0.5
0.2
0.1
1
2
5
10
20
50
1
2
5
10
20
50
Collector Current IC (mA)
Collector to Base Voltage VCB (V)
3
2SC2512
Conversion Gain vs. Collector Current
VCC = 12 V
Noise Figure vs. Collector Current
VCC = 12 V
30
26
22
18
14
10
10
8
f
f
f
osc = 260 MHz (0 dBm)
in = 200 MHz
out = 60 MHz
f
f
osc = 260 MHz (0 dBm)
in = 200 MHz
Rg = 50 Ω
Rg = 50 Ω
6
4
2
0
2
4
6
8
10
0
1
2
3
4
5
Collector Current IC (mA)
Collector Current IC (mA)
Noise Figure, Conversion Gain vs.
Oscillating Injection Voltage
10
8
30
IC = 2 mA
V
CC = 12 V
f
osc = 260 MHz
fin = 200 MHz
Rg = 50 Ω
6
20
10
4
NF
CG
2
0
–15
–5
5
Oscillating Injection Voltage Vinj (dBm)
4
2SC2512
Conversion Gain, Noise Figure Test Circuit
R2
fOSC Input
R1 : 330 Ω (1/4 W)
R2 : 560 Ω (1/4 W)
VCC
C1
Output
L1 : φ0.8 mm Copper wire with Enamel 8 Turns
inside dia φ3 mm
L4
L5 C8
L2 C2
C3
L2 : φ0.8 mm Copper wire with Enamel 5 Turns
inside dia φ3 mm
L3 : φ0.5 mm Copper wire with Enamel 3.5 Turns
inside dia φ3 mm
L4 : Outside dia φ5 mm used Ferrite Core, φ0.2 mm
Copper wire with Enamel 6.5 Turns
L5 : φ0.2 mm Copper wire with Enamel 13 Turns
inside dia φ5 mm
Input
C6
C7
C9
R1
L3
L1
C5
C4
VBB
Parts Specification
C1 : 1.5 pF
C2 : 57 pF
C3 : 17 pF
C4 : 1000 pF
C5 : 2200 pF
C6 : 22 pF
C7 : 80 pF
C8 : 18 pF
C9 : 20 pF
5
Unit: mm
4.8 ± 0.3
3.8 ± 0.3
0.60 Max
0.45 ± 0.1
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
TO-92 (2)
Conforms
Conforms
Weight (reference value) 0.25 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
: http:semiconductor.hitachi.com/
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
Asia (Taiwan)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
Hitachi Europe GmbH
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Fax: 535-1533
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Telex: 40815 HITEC HX
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
©2020 ICPDF网 联系我们和版权申明