2SC2516 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SC2516 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2516
DESCRIPTION
·With TO-220C package
·Low collector saturation voltage
·Wide area of safe operation
APPLICATIONS
·Switching regulators
·DC-DC converters
·High frequency power amplifiers
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
3
Emitter
Absolute maximum ratings(Ta=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
150
60
UNIT
Open emitter
Open base
V
V
V
A
A
A
Open collector
12
5
ICM
Collector current-peak
Base current
10
IB
2.5
Ta=25ꢀ
TC=25ꢀ
1.5
PT
Total power dissipation
W
30
Tj
Junction temperature
Storage temperature
150
-55~150
ꢀ
ꢀ
Tstg
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2516
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat
VBEsat
ICBO
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
CONDITIONS
IC=3.0A ; IB=0;L=1mH
IC=3A; IB=0.3A
MIN
TYP.
MAX
UNIT
V
60
0.6
1.5
10
V
IC=3A; IB=0.3A
V
VCB=100V ;IE=0
µA
VCE=100V; VBE=-1.5V
Ta=125ꢀ
10
1
µA
mA
ICEX
IEBO
VEB=10V ;IC=0
10
µA
hFE-1
DC current gain
IC=0.2 A ; VCE=5V
IC=3 A ; VCE=5V
40
40
hFE-2
DC current gain
200
Switching times
Turn-on time
0.5
2.5
0.5
µs
µs
µs
ton
IC=3A; IB1=-IB2=0.3A
RL=17Ω; VCC=50V
Storage time
Fall time
ts
tf
ꢀ hFE-2 Classifications
M
L
K
40-80
60-120
100-200
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2516
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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