2SC2507 [ISC]

isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管
2SC2507
型号: 2SC2507
厂家: INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述:

isc Silicon NPN Power Transistor
ISC的硅NPN功率晶体管

晶体 晶体管
文件: 总2页 (文件大小:68K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
2SC2507  
DESCRIPTION  
·Collector-Emitter Sustaining Voltage-  
: VCEO(SUS)= 400V(Min)  
·Fast Switching Speed  
·Collector-Emitter Saturation Voltage-  
: VCE(sat)= 0.7V(Max.)@ IC= 10A  
APPLICATIONS  
·Designed for use in high-voltage, high-speed , power  
switching in inductive circuit , they are particularly suited  
for 115 and 220V switchmode applications such as swit-  
ching regulator’s, inverters.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
500  
400  
7
UNIT  
V
V
V
Collector Current-Continuous  
Collector Current-Peak  
Base Current-Continuous  
Base Current-Peak  
20  
A
ICM  
40  
A
IB  
7
A
IBM  
14  
A
Collector Power Dissipation  
@ TC=25℃  
PC  
200  
150  
-55~150  
W
TJ  
Junction Temperature  
Storage Temperature Range  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal Resistance,Junction to Case  
0.625 /W  
Rth j-c  
isc Websitewww.iscsemi.cn  
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
2SC2507  
ELECTRICAL CHARACTERISTICS  
TC=25unless otherwise specified  
SYMBOL  
VCEO(SUS)  
VCE(  
PARAMETER  
Collector-Emitter Sustaining Voltage  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Collector Cutoff Current  
CONDITIONS  
MIN  
TYP.  
MAX  
UNIT  
V
IC= 0.2A; IB= 0  
400  
IC= 10A; IB= 1A  
IC= 10A; IB= 1A  
VCB= 500V; IE= 0  
VCE= 320V; IB= 0  
VEB= 7V; IC= 0  
0.7  
1.5  
100  
100  
1.0  
V
)
sat  
V
VBE(  
)
sat  
ICBO  
μA  
μA  
mA  
ICEO  
IEBO  
hFE-1  
hFE-2  
fT  
Collector Cutoff Current  
Emitter Cutoff Current  
DC Current Gain  
IC= 10A; VCE= 2V  
IC= 20A; VCE= 2V  
IC= 1A; VCE= 10V  
15  
8
DC Current Gain  
Current-Gain—Bandwidth Product  
20  
MHz  
Switching times  
Turn-on Time  
1.0  
3.0  
0.7  
μs  
μs  
μs  
ton  
tstg  
tf  
IC= 10A, IB1= -IB2= 2A  
RL= 3Ω; VBB2= 4V  
Storage Time  
Fall Time  
2
isc Websitewww.iscsemi.cn  

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