IRFU410 [INTERSIL]
1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs; 1.5A ， 500V ， 7.000 Ohm的N通道功率MOSFET
| 型号： | IRFU410 |
| 厂家： | 
Intersil |
| 描述： | 1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs |
| 文件： | 总7页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFR410, IRFU410
Data Sheet
July 1999
File Number 3372.2
1.5A, 500V, 7.000 Ohm, N-Channel Power
MOSFETs
Features
• 1.5A, 500V
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
• r
= 7.000Ω
DS(ON)
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• High Input Impedance
o
• 150 C Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Formerly developmental type TA17445.
Ordering Information
Symbol
PART NUMBER
IRFU410
IRFR410
PACKAGE
TO-251AA
TO-252AA
BRAND
IFU410
IFR410
D
G
NOTE: When ordering, use the entire part number.
S
Packaging
JEDEC TO-251AA
JEDEC TO-252AA
SOURCE
DRAIN
GATE
GATE
SOURCE
DRAIN (FLANGE)
DRAIN (FLANGE)
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
4-401
IRFR410, IRFU410
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
C
IRFR410, IRFU410
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
500
500
V
V
DS
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
1.5
1.2
A
A
D
D
o
T
= 100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
3.0
A
V
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
±20
42
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
W
D
o
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.33
W/ C
Single Pulse Avalanche Rating (See Figure 5) (Note 4) . . . . . . . . . . . . . . . . . . . . . . .E
Refer to UIS Curve
-55 to 150
mJ
AS
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T , T
J
C
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
o
300
260
C
C
L
o
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
o
o
1. T = 25 C to 125 C.
J
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
500
-
TYP
-
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
= 250µA, V
GS
= 0V
-
-
V
D
o
o
Temperature Coefficient of
Breakdown Voltage
∆B-
/∆T
Reference to 25 C, I = 250µA
0.61
V/ C
D
V
DSS
J
Gate to Source Threshold Voltage
Zero Gate Voltage Drain Current
V
V
= V , I = 250µA
DS
2
-
-
4
V
GS(TH)
GS
D
I
V
V
= 500V, V
= 500V, V
= ±20V
= 0V
-
25
µA
µA
nA
Ω
DSS
DS
DS
GS
GS
o
= 0V, T = 125 C
-
-
250
J
Gate to Source Leakage Current
I
V
-
-
±100
GSS
GS
Drain to Source On Resistance (Note 3)
Forward Transconductance (Note 3)
Turn-On Delay Time
r
I
= 1.5A, V
= 10V, (Figure 9)
-
-
7.000
DS(ON)
D GS
g
V
= 50V, I
DS
= 0.75A, (Figure 8)
0.5
-
-
-
S
fs
DS
DD
t
V
= 250V, I ≈ 1.5A, R
GS
= 24Ω, R = 167Ω,
-
-
-
-
-
-
-
-
-
-
7
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
d(ON)
D
L
MOSFET Switching Times are Essentially
Independent of Operating Temperature
Rise Time
t
10
24
15
9
-
r
Turn-Off Delay Time
t
-
d(OFF)
Fall Time
t
-
f
Total Gate Charge
Q
VGS = 10V, ID ≈ 1.5A, VDS = 0.8 x Rated BV
(Figure 12)
Gate Charge is Essentially Independent of
Operating Temperature
,
DSS
12
1.4
7
-
g(TOT)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Q
1.1
5
gs
gd
Q
C
V
= 0V, V = 25V, f = 1.0MHz,
DS
210
30
7
ISS
GS
(Figure 10)
Output Capacitance
C
-
OSS
RSS
Reverse Transfer Capacitance
C
-
4-402
IRFR410, IRFU410
o
Electrical Specifications
PARAMETER
T = 25 C, Unless Otherwise Specified (Continued)
C
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Internal Drain Inductance
L
Measured From the
Drain Lead, 6mm
Modified MOSFET
Symbol Showing the
-
4.5
-
nH
D
(0.25in) From Package Internal Devices
to Center of Die
Inductances
D
Internal Source Inductance
L
Measured From The
Source Lead, 6mm
-
7.5
-
nH
S
L
D
(0.25in) From Header
to Source Bonding Pad
G
L
S
S
o
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
R
R
-
-
-
-
3.0
C/W
θJC
o
Free Air Operation
110
C/W
θJA
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
1.5
UNITS
D
Continuous Source to Drain Current
I
Modified MOSFET
Symbol Showing the
Integral Reverse
-
-
-
-
A
A
SD
Pulse Source to Drain Current
(Note 3)
I
3.0
SDM
P-N Junction Diode
G
S
o
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
NOTES:
V
T = 25 C, I
J
= 1.5A, V
GS
= 0V, (Figure 11)
-
-
-
2.0
V
SD
SD
SD
o
t
T = 25 C, I
= 1.5A, dI /dt = 100A/µs
SD
130
520
ns
J
rr
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve. (Figure 3)
o
4. V
= 50V, starting T = 25 C, L = 40µH, R = 25Ω, peak I = 1.5A.
J G AS
DD
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
2.0
1.5
1.0
0.5
0
0
50
100
o
150
25
50
75
100
125
150
o
T , CASE TEMPERATURE ( C)
T , CASE TEMPERATURE ( C)
C
C
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
4-403
IRFR410, IRFU410
Typical Performance Curves Unless Otherwise Specified (Continued)
1
0.5
0.2
0.1
0.1
P
DM
0.05
t
1
0.02
0.01
t
2
NOTES:
DUTY FACTOR D = t /t
SINGLE PULSE
1
2
T
= P
x Z
x R
+ T
J
DM
θJC
θJC C
-1
10
-5
10
-4
10
-3
-2
0.1
10
10
10
1
t , RECTANGULAR PULSE DURATION (s)
1
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
10
1
5.0
T
T
= MAX RATED, SINGLE PULSE
= 25 C
J
C
o
I
DM
100µs
o
STARTING T = 25 C
J
o
STARTING T = 150 C
J
1ms
10ms
DC
0.10
0.01
OPERATION IN THIS AREA
1.0
0.5
LIMITED BY r
DS(ON)
IF R = D
= (L)(I )/(1.3 RATED BV
t
- V
)
DD
AV
IF R ≠ D
AS
DSS
t
= (L/R) IN [(I
X R)/(1.3 RATED BV
- V ) + 1]
DSS DD
AV
DS
0.5
0.010
0.100
1
1
10
100
1000
t
, TIME IN AVALANCHE (ms)
AV
DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. UNCLAMPED INDUCTIVE SWITCHING
3
3
1
V
V
GS
GS
TOP
10V
8.0V
7.0V
6.0V
5.5V
5.0V
TOP
10V
8.0V
7.0V
6.0V
5.5V
5.0V
1
BOTTOM 4.5V
BOTTOM 4.5V
PULSE DURATION = 80µs
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
DUTY CYCLE = 0.5% MAX
o
o
T
= 150 C
T
= 25 C
C
C
0.1
0.1
0.1
0.1
1
10
100
500
1
10
100
500
V
, DRAIN TO SOURCE VOLTAGE (V)
V , DRAIN TO SOURCE VOLTAGE (V)
DS
DS
o
o
FIGURE 6. OUTPUT CHARACTERISTICS, T = 25 C
C
FIGURE 7. OUTPUT CHARACTERISTICS, T = 150 C
C
4-404
IRFR410, IRFU410
Typical Performance Curves Unless Otherwise Specified (Continued)
3
3
2
o
25 C
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
= 30V
I
= 1.5A, V = 10V
DS
D
GS
o
150 C
1
1
0
0.1
3
4
5
6
7
8
-60 -40 -20
0
20
40 60 80 100 120 140 160
o
V
, GATE VOLTAGE (V)
T , JUNCTION TEMPERATURE ( C)
J
GS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
300
250
200
150
100
50
3
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
= 0V
GS
o
o
C
ISS
25 C
150 C
1
V
= 0V, f = 1MHz
= C + C
GS
C
ISS
GS GD
C
C
= C
RSS
OSS
GD
≈ C
+ C
GD
DS
C
OSS
C
RSS
0
0.1
0
5
10
15
20
25
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
V
, SOURCE TO DRAIN VOLTAGE (V)
SD
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 11. SOURCE TO DRAIN DIODE VOLTAGE
20
I
= 1.5A
D
V
V
V
= 400V
= 250V
= 100V
DS
DS
DS
18
12
8
4
0
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
Q
, TOTAL GATE CHARGE (nC)
g(TOT)
FIGURE 12. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-405
IRFR410, IRFU410
Test Circuits and Waveforms
V
DS
BV
DSS
L
t
P
V
DS
I
VARY t TO OBTAIN
P
AS
+
V
DD
R
REQUIRED PEAK I
G
AS
V
DD
-
V
GS
DUT
t
P
I
AS
0V
0
0.01Ω
t
AV
FIGURE 13. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 14. UNCLAMPED ENERGY WAVEFORMS
t
t
ON
OFF
t
d(OFF)
t
d(ON)
t
t
f
r
R
L
V
DS
90%
90%
+
V
DD
10%
10%
R
G
0
0
-
DUT
90%
50%
V
GS
50%
PULSE WIDTH
10%
V
GS
FIGURE 15. SWITCHING TIME TEST CIRCUIT
FIGURE 16. RESISTIVE SWITCHING WAVEFORMS
V
DS
(ISOLATED
SUPPLY)
CURRENT
REGULATOR
V
DD
Q
SAME TYPE
AS DUT
g(TOT)
V
GS
12V
BATTERY
0.2µF
Q
gd
50kΩ
0.3µF
Q
gs
D
S
V
DS
G
DUT
0
0
I
G(REF)
0
V
I
DS
G(REF)
I
CURRENT
SAMPLING
RESISTOR
I
CURRENT
SAMPLING
RESISTOR
G
D
FIGURE 17. GATE CHARGE TEST CIRCUIT
FIGURE 18. GATE CHARGE WAVEFORMS
4-406
IRFR410, IRFU410
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