IRFU410ATU [FAIRCHILD]
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型号: | IRFU410ATU |
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IRFU410A
Advanced Power MOSFET
IRFU410A
BVDSS = 520 V
Improved Inductive Ruggedness
Rugged Polysilicon Gate Cell Structure
Fast Switching Times
W
RDS(on) = 10.0
ID = 1.2 A
Lower Input Capacitance
Improved Gate Charge
TO-220
Extended Safe Operating Area
Improved High Temperature Reliability
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
Characteristic
Drain-to-Source Voltage
Value
Units
VDSS
V
520
1.2
0.8
4.0
20
O
Continuous Drain Current (TC=25 C)
ID
A
O
C
Continuous Drain Current (TC=100
Drain Current-Pulsed
)
1
IDM
VGS
EAS
IAR
O
A
V
+
_
Gate-to-Source Voltage
2
Single Pulsed Avalanche Energy
Avalanche Current
40
mJ
A
O
1
1.2
4.2
3.5
42
O
EAR
dv/dt
1
Repetitive Avalanche Energy
mJ
V/ns
O
3
Peak Diode Recovery dv/dt
O
O
Total Power Dissipation (TC=25
Linear Derating Factor
)
C
W
PD
TJ , TSTG
TL
O
0.33
W/
C
Operating Junction and
-55 to +150
Storage Temperature Range
O
C
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
300
Thermal Resistance
Symbol
Characteristic
Junction-to-Case
Case-to-Sink
Typ.
Max.
3.0
--
Units
Rq
--
1.7
--
JC
O
Rq
C
/W
CS
Rq
Junction-to-Ambient
110
JA
Rev. B
©1999 Fairchild Semiconductor Corporation
N-CHANNEL
POWER MOSFET
IRFU410A
O
Electrical Characteristics (TC=25 C unless otherwise specified)
Symbol
BVDSS
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
V
V
GS=0V,ID=250 mA
520
--
--
O
DBV/DTJ
VGS(th)
m
V/
ID=250 A
See Fig 7
C
-- 0.60 --
m
VDS=4V,ID=250 A
V
2.0
--
--
4.0
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
V
V
GS=30V
GS=-30V
-- 100
-- -100
IGSS
nA
--
VDS=520V
DS=416V,TC=125
--
--
10
IDSS
Drain-to-Source Leakage Current
m
A
O
C
V
--
-- 1000
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
4
VGS=10V,ID=0.6A
DS¡ Ã50V,ID=0.6A
RDS(on)
W
--
--
10
O
gfs
Ciss
Coss
Crss
td(on)
tr
4
-- 0.70 --
W
V
O
--
--
--
--
--
--
--
--
--
--
-
300
80
40
20
30
60
45
21
--
VGS=0V,VDS=25V,f =1MHz
-
-
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
pF
See Fig 5
-
-
W
DD=260V,ID=1.2A,RG=9.1
V
ns
td(off)
tf
-
Turn-Off Delay Time
Fall Time
4
5
See Fig 13
O
O
-
Qg
--
4.5
9.5
Total Gate Charge
Gate-Source Charge
Gate-Drain(“ Miller” ) Charge
VDS=416V,VGS=10V,ID=1.2A
Qgs
Qgd
nC
4
5
O
See Fig 6 & Fig 12
O
--
Source-Drain Diode Ratings and Characteristics
Symbol
IS
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
--
--
--
--
--
--
1.2
4.0
Integral reverse pn-diode
A
ISM
1
in the MOSFET
O
O
4
O
V
VSD
trr
-- 1.15
350 --
C
TJ=25 ,IS=1.2A,VGS= 0V
O
ns
C
TJ=25 ,IF=1.2A
m
C
Qrr
506
-
diF/dt=100A/ ms
4
O
Notes ;
1
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O
O
2
W
L=40mH, Vdd=25V, RG=25 , Starting TJ=25 C
O
3
dv/dt Test Condition
O
4
m
Pulse Test : Pulse Width = 250 s, Duty Cycle _ 2%
<
O
5
Essentially Independent of Operating Temperature
O
N-CHANNEL
POWER MOSFET
IRFU410A
Fig 1. Output Characteristics
Fig 2. Transfer Characteristics
3
2
1
0
10
1
VGS
10V
9V
8V
7V
6V
5V
TOP :
80us Pul se Test
Vds>Id(on)Rds(on)
Tj =150oC
BOTTOM
0.1
Tj =25oC
@Not e
1. 250us Pul se Test
2. Tc=25 o
:
C
Tj =-25oC
0.01
0.1
0
2
4
6
8
10
12
1
10
100
VDS, DRAIN-TO-SOURCE VOLTAGE(VOLTS)
Typi cal Out put Charact eri st i cs
Vgs, GATE-TO-SOURCE VOLTAGE(VOLTS)
Typical Transfer Characteristics
Fig 3. On-Resistance vs. Drain Current
Fig 4. Source-Drain Diode Forward Voltage
20
16
12
8
100
10
1
Tj =25oC
VGS=10V
o
Tj=150 C
VGS=20V
@Note :
1. Vgs=0V
2. 250us Pulse Test
@ Note : Tj=25C o
4
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
3
4
5
6
ID, DRAIN CURRENT(AMPERES)
Typical On-Resistance Vs. Drain Current
VSD, SOURCE-TO-DRAIN VOLTAGE(VOLTS)
Typical Source-Drain Diode Forward Voltage
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 6. Gate Charge vs. Gate-Source Voltage
16
250
Ci ss=Cgs+Cgd (Cds=short ed)
Coss=Cds+Cgd
Crss=Cgd
14
12
10
8
200
150
100
50
0
Ciss
6
@Notes :
1. Vgs=0V
2. f=1MHz
VDS=400V
4
Coss
Crss
2
ID=1. 2A
12
0
1
10
100
0
2
4
6
8
10
14
VDS, Drain -Source Voltage (v)
Qg, TOTAL GATE CHARGE(nC)
Typical Gate Charge Vs. Gate-To-Source Voltage
N-CHANNEL
POWER MOSFET
IRFU410A
Fig 7. Breakdown Voltage vs. Temperature
Fig 8. On-Resistance vs. Temperature
1.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
1.1
1.0
VGS=10V
ID=0. 6A
0.9
0.8
-50
0
50
100
150
-75
-50
-25
0
25
50
75
100
125
150
175
Tj=JUNCTION TEMPERATURE(o)C
Breakdown Voltage Vs. Temperature
Tj, JUNCTION TEMPERATURE(oC)
Breakdown Voltage Vs. Temperature
Fig 10. Max. Drain Current vs. Case Temperature
2.0
1.5
1.0
0.5
0.0
25.0
37.5
50.0
62.5
75.0
87.5 100.0 112.5 125.0 137.5 150.0
Ta, AMBIENT TEMPERATURE(oC)
Maximum Drain Current Vs. Case Temperature
N-CHANNEL
POWER MOSFET
IRFU410A
Fig 12. Gate Charge Test Circuit & Waveform
“ Current Regulator ”
VGS
Same Type
as DUT
W
50K
Qg
12V
200nF
10V
300nF
VDS
Qgs
Qgd
VGS
DUT
R2
3mA
R1
Charge
Current Sampling (IG) Current Sampling (ID)
Resistor Resistor
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
Vout
Vin
Vout
90%
VDD
( 0.5 rated VDS
)
RG
DUT
10%
Vin
10V
td(on)
tr
td(off)
tf
t on
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
2
2
LL
ID
----
--------------------
EAS
=
LL IAS
BVDSS -- VDD
VDS
BVDSS
IAS
Vary tp to obtain
required peak ID
RG
ID (t)
VDD
C
DUT
VDS (t)
VDD
10V
t p
t p
Time
N-CHANNEL
POWER MOSFET
IRFU410A
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
--
I S
L
Driver
VGS
Same Type
as DUT
RG
VDD
VGS
• dv/dt controlled by “RG”
• IS controlled by Duty Factor “D”
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I S
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
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DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
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As used herein:
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systems which, (a) are intended for surgical implant into
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
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be reasonably expected to cause the failure of the life
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effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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