IRFU4105 [KERSEMI]
Ultra Low On-Resistance; 超低导通电阻
| 型号： | IRFU4105 |
| 厂家： | 
Kersemi Electronic Co., Ltd. |
| 描述： | Ultra Low On-Resistance |
| 文件： | 总10页 (文件大小：3746K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 91302C
IRFR/U4105
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l Surface Mount (IRFR4105)
l Straight Lead (IRFU4105)
l Fast Switching
D
VDSS = 55V
RDS(on) = 0.045Ω
l Fully Avalanche Rated
G
Description
ID = 27Aꢀ
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
D-PAK
T O -252AA
I-PAK
TO -251AA
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
27ꢀ
19
A
100
68
PD @TC = 25°C
Power Dissipation
W
W/°C
V
Linear Derating Factor
0.45
± 20
65
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
16
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
6.8
5.0
mJ
V/ns
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
–––
–––
Max.
2.2
Units
°C/W
1
RθJC
RθJA
RθJA
Junction-to-Ambient (PCB mount) **
Junction-to-Ambient
50
110
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5/11/98
IRFR/U4105
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
55 ––– –––
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.052 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.045
VGS = 10V, ID = 16A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 16A
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 20V
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
2.0
6.5
––– 4.0
––– –––
V
S
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 34
––– ––– 6.8
––– ––– 14
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -20V
Qg
ID = 16A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 44V
VGS = 10V, See Fig. 6 and 13
–––
–––
–––
–––
7.0 –––
49 –––
31 –––
40 –––
VDD = 28V
ID = 16A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 18Ω
RD = 1.8Ω, See Fig. 10
Between lead,
6mm (0.25in.)
D
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
4.5
–––
nH
G
from package
––– 7.5 –––
and center of die contact
VGS = 0V
S
Ciss
Coss
Crss
Input Capacitance
––– 700 –––
––– 240 –––
––– 100 –––
Output Capacitance
pF
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
27ꢀ
––– –––
––– –––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
100
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.6
––– 57 86
––– 130 200
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
V
TJ = 25°C, IS = 16A, VGS = 0V
ns
TJ = 25°C, IF = 16A
Qrr
ton
nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 410µH
RG = 25Ω, IAS = 16A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%
ꢀ Calculated continuous current based on maximum allowable junction
temperature; Package limitation current = 20A
This is applied for I-PAK, Ls of D-PAK is measured between lead and
,
center of die contact
ISD ≤ 16A, di/dt ≤ 420A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
Uses IRFZ34N data and test conditions
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
2
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IRFR/U4105
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
1
1
20µs PULS E W IDTH
20µs P ULSE W IDTH
T
= 175°C
C
T
= 25°C
C
0.1
A
0.1
A
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.4
2.0
1.6
1.2
0.8
0.4
0.0
100
I
= 26A
D
TJ = 25°C
T
= 175°C
J
10
VDS = 25V
20µs PULSE W IDTH
tion
V
= 10V
G S
1
A
10 A
-60 -40 -20
0
20
40
60
80 100 120 140 160 180
4
5
6
7
8
9
T
J
, Junction Tem perature (°C)
VG S , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRFR/U4105
20
16
12
8
1200
I
= 16 A
D
V
C
C
C
= 0V,
f = 1M Hz
G S
iss
= C
+ C
+ C
,
C
SHORTE D
V
V
= 44V
= 28V
gs
gd
ds
D S
D S
= C
= C
rss
oss
gd
ds
1000
800
600
400
200
0
C
C
gd
iss
oss
C
rss
4
FO R TE ST CIRCUIT
S EE FIGUR E 13
0
A
A
1
10
100
0
10
G
20
30
40
V
, Drain-to-Source Voltage (V)
DS
Q
, Total G ate Charge (nC)
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
100
10
1000
100
10
OPE RATION IN THIS AREA LIM ITE D
BY R DS(on)
10µs
T
= 175°C
J
T
= 25°C
100µs
1m s
J
T
T
= 25°C
= 175°C
C
J
V
= 0V
G S
S ingle Pulse
1
A
1
A
0.4
0.8
1.2
1.6
2.0
1
10
100
V
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRFR/U4105
30
25
20
15
10
5
RD
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25
50
75
100
125
150
175
°
, Case Temperature ( C)
T
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
D = 0.50
0.20
1
0.10
0.05
P
DM
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.1
t
1
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
x Z
+ T
thJC C
J
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFR/U4105
140
120
100
80
I
D
TO P
6.5A
11A
16A
15V
BOTTOM
DRIVER
L
V
D S
D.U .T
R
G
+
-
60
V
DD
I
A
AS
10V
40
Ω
0.01
t
p
20
Fig 12a. Unclamped Inductive Test Circuit
V
= 25V
50
DD
0
A
25
75
100
125
150
175
V
(BR)DSS
Starting T , Junction Tem perature (°C)
J
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
5.0 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRFR/U4105
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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7
IRFR/U4105
Package Outline
TO-252AA Outline
Dimensions are shown in millimeters (inches)
2 .3 8 (.09 4)
2 .1 9 (.08 6)
6.7 3 (.265 )
6.3 5 (.250 )
1.14 (.0 45)
0.89 (.0 35)
-
A
4
-
1 .27 (.0 50)
0 .88 (.0 35)
5 .4 6 (.21 5)
5 .2 1 (.20 5)
0.5 8 (.02 3)
0.4 6 (.01 8)
6.45 (.2 45 )
5.68 (.2 24 )
6.22 (.2 45)
5.97 (.2 35)
1 0.42 (.4 10 )
9 .4 0 (.37 0)
1.0 2 (.04 0)
1.6 4 (.02 5)
LE A D A S S IG N M E N T S
1
2
3
1
2
3
4
-
-
-
-
G A T E
D R A IN
S O U R C E
D R A IN
0.51 (.0 20 )
M IN .
- B
-
1 .52 (.06 0)
1 .15 (.04 5)
0.89 (.0 35)
0.64 (.0 25)
3X
0 .58 (.0 23)
0 .46 (.0 18)
1.14 (.0 45)
0.76 (.0 30)
2X
0.2 5 (.0 10 )
M
A M B
N O TE S :
2.2 8 (.0 90 )
1
2
3
4
D IM E N S IO N IN G & T O LE R A N C IN G P E R A N S I Y 14 .5M , 1 982 .
C O N T R O LLIN G D IM E N S IO N : IN C H .
4 .57 (.18 0)
C O N F O R M S T O JE D E C O U T LIN E TO -25 2A A .
D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP ,
S O L D E R D IP M A X. +0 .16 (.00 6).
Part Marking Information
TO-252AA (D-PARK)
EXA M PLE : THIS IS AN IR FR120
W ITH AS SEM BLY
A
INTERN ATIONA L
RE CTIFIE R
LO GO
LOT COD E 9U1P
FIR ST PO RTION
OF PA RT NUM B ER
IR FR
120
1P
9U
ASS EM B LY
SE COND POR TION
OF PAR T NUM B ER
LOT
CODE
8
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IRFR/U4105
Package Outline
TO-251AA Outline
Dimensions are shown in millimeters (inches)
6.7 3 (.265 )
6.3 5 (.250 )
2.38 (.0 94 )
2.19 (.0 86 )
- A
-
0 .5 8 (.02 3)
0 .4 6 (.01 8)
1.2 7 (.050 )
0.8 8 (.035 )
5 .4 6 (.21 5)
5 .2 1 (.20 5)
LE A D A S S IG N M E N T S
4
1
2
3
4
-
-
-
-
G A T E
D R A IN
6 .45 (.2 45)
5 .68 (.2 24)
S O U R C E
D R A IN
6 .22 (.24 5)
5 .97 (.23 5)
1 .52 (.06 0)
1 .15 (.04 5)
1
2
3
- B
-
N O TE S :
1
2
3
4
D IM E N S IO N IN G & T O LE R A N C IN G P E R A N S I Y 14 .5M , 19 82 .
2.2 8 (.09 0)
1.9 1 (.07 5)
9.6 5 (.3 80 )
8.8 9 (.3 50 )
C O N T R O L LIN G D IM E N S IO N : IN C H .
C O N F O R M S TO J E D E C O U T LIN E T O -25 2A A .
D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP ,
S O L D E R D IP M A X. +0.1 6 (.00 6).
1 .14 (.0 45)
0 .76 (.0 30)
1.14 (.0 45 )
0.89 (.0 35 )
3X
0.8 9 (.035 )
0.6 4 (.025 )
3X
0 .25 (.01 0)
M
A M B
0.58 (.0 23 )
0.46 (.0 18 )
2 .28 (.09 0)
2 X
Part Marking Information
TO-251AA (I-PARK)
EXAM PLE : THIS IS AN IRFU120
W ITH ASSEM BLY
INTE RNATIONAL
RECTIFIER
LO GO
LOT CODE 9U1P
FIRST PORTION
OF PART NUM BER
IRFU
120
1P
9U
SECOND PO RTION
OF PART NUM BER
AS SEM BLY
LOT
CODE
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9
IRFR/U4105
Tape & Reel Information
TO-252AA
TR
TR L
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTIO N
FEED DIRECTIO N
NO T ES :
1. CO NT RO LLING DIM EN SIO N : M ILLIM ET ER.
2. ALL DIM EN SIO NS ARE SH O W N IN M ILLIM ETERS ( INC HES ).
3. O UTLINE CO N FO RM S T O EIA-481 & EIA-541.
13 INC H
16 m m
NO TES :
1. O U TLINE CO NFO RM S TO EIA-481.
10
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