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Q62702-A1264 [INFINEON]

Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz); 硅PIN二极管（高电压电流控制RF电阻RF衰减器和开关频率范围1MHz以上）
Q62702-A1264
型号： Q62702-A1264
厂家： Infineon    Infineon
描述：

Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz)
硅PIN二极管（高电压电流控制RF电阻RF衰减器和开关频率范围1MHz以上）

二极管 开关 衰减器
文件： 总4页 (文件大小：51K)
中文：  中文翻译
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BAR 64 ... W  
Silicon PIN Diode  
3
• High voltage current controlled  
RF resistor for RF attenuator and switches  
• Frequency range above 1 MHz  
• Low resistance and short carrier lifetime  
• For frequencies up to 3 GHz  
2
1
VSO05561  
BAR 64-04W  
BAR 64-05W  
BAR 64-06W  
Type  
Marking Ordering Code  
Pin Configuration  
Package  
3=C1/A2 SOT-323  
3 = C1/2  
BAR 64-04W PPs  
BAR 64-05W PRs  
BAR 64-06W PSs  
Q62702-A1264  
Q62702-A1265  
Q62702-A1266  
1 = A1  
1 = A1  
1 = C1  
2 = C2  
2 = C2  
2 = C2  
3 = A1/2  
Maximum Ratings  
Parameter  
Symbol  
Value  
200  
Unit  
V
Diode reverse voltage  
Forward current  
V
R
100  
mA  
mW  
°C  
I
F
250  
Total power dissipation, T ≤ 115 °C  
P
tot  
S
Junction temperature  
150  
T
j
Operating temperature range  
Storage temperature  
- 55 ...+150  
- 55 ...+150  
T
T
op  
stg  
Thermal Resistance  
1)  
Junction - ambient  
K/W  
R
≤ 300  
≤ 140  
thJA  
Junction - soldering point  
R
thJS  
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm  
Semiconductor Group  
1
Sep-04-1998  
1998-11-01  
Semiconductor Group  
1
BAR 64 ... W  
Electrical Characteristics at T = 25°C, unless otherwise specified.  
A
Parameter  
Symbol  
Values  
typ.  
Unit  
min.  
max.  
DC characteristics  
Breakdown voltage  
200  
-
-
-
-
V
V
(BR)  
I
= 5 µA  
(BR)  
Reverse current  
-
-
50  
µA  
I
R
V = 20 V  
R
Forward voltage  
1.1 mV  
0.35 pF  
V
F
I = 50 mA  
F
AC characteristics  
Diode capacitance  
-
0.23  
C
T
V = 20 V, f = 1 MHz  
R
Forward resistance  
r
Ω
20  
f
I = 1 mA, f = 100 MHz  
-
-
-
12.5  
2.1  
F
I = 10 mA, f = 100 MHz  
2.8  
F
I = 100 mA, f = 100 MHz  
0.85  
1.35  
F
Charge carrier life time  
-
1.55  
-
µs  
τ
rr  
I = 10 mA, I = 6 mA, I = 3 mA  
F
R
R
Series inductance  
-
1.2  
-
nH  
L
s
Semiconductor Group  
Semiconductor Group  
2
Sep-04-1998  
1998-11-01  
2
BAR 64 ... W  
Forward current I = f (T *;T )  
F
A
S
* mounted on alumina  
140  
5
mA  
100  
T
S
I
80  
T
A
60  
40  
20  
0
°C  
0
20  
40  
60  
80  
100 120  
150  
T ,T  
A
S
Permissible Pulse Load  
Permissible Pulse Load R  
= f(t )  
thJS  
p
I
/ I  
= f(t )  
Fmax FDC p  
10 3  
10 2  
K/W  
-
10 2  
I
D = 0  
0.005  
0.01  
0.02  
0.05  
0.1  
R
I
10 1  
10 1  
0.5  
0.2  
0.1  
0.2  
0.5  
0.05  
0.02  
0.01  
10 0  
0.005  
D = 0  
10 -1  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
10 -6 10 -5 10 -4 10 -3 10 -2 10 -1  
10 1  
s
s
t
p
t
p
Semiconductor Group  
Semiconductor Group  
3
Sep-04-1998  
1998-11-01  
3
BAR 64 ... W  
Diode capacitance C = f (V )  
Forward resistance r = f(I )  
T
R
f
F
f = 1MHz  
f = 100MHz  
10 3  
0.6  
pF  
Ohm  
10 2  
0.4  
C
R
10 1  
0.3  
0.2  
0.1  
10 0  
10 -1  
10 -2  
0.0  
0
3
10 -1  
10 0  
10 1  
10 2  
10  
V
5
10  
15  
20  
30  
mA  
V
I
R
F
Intermodulation intersept point  
Forward current I = f (V )  
F
F
IP = f (I )  
T = parameter  
3
F
A
f = parameter  
10 3  
mA  
10 2  
5
f=900MHz  
10 2  
f=1800MHz  
10 1  
I
IP  
dBm  
10 0  
10 -1  
10 -2  
10 1  
10 -1  
10 0  
10 1  
V
mA  
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8  
1.0  
V
I
F
F
Semiconductor Group  
Semiconductor Group  
4
Sep-04-1998  
1998-11-01  
4

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