JANSR2N7391 [INFINEON]
TRANSISTOR N-CHANNEL(BVdss=400V, Rds(on)=0.20ohm, Id=22A); 晶体管N沟道（ BVDSS = 400V ， RDS（ON） = 0.20ohm ，ID = 22A ）
| 型号： | JANSR2N7391 |
| 厂家： | 
Infineon |
| 描述： | TRANSISTOR N-CHANNEL(BVdss=400V, Rds(on)=0.20ohm, Id=22A) |
| 文件： | 总4页 (文件大小：99K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Provisional Data Sheet No. PD-9.1224A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET® TRANSISTOR
IRHM7360SE
JANSR2N7391
[REF:MIL-PRF-195000/TBD]
N-CHANNEL
SINGLE EVENT EFFECT (SEE) RAD HARD
400 Volt, 0.20Ω, (SEE) RAD HARD HEXFET Product Summary
Part Number
BVDSS
RDS(on)
ID
International Rectifier’s (SEE) RAD HARD technology
HEXFETs demonstrate virtual immunity to SEE fail-
ure.Additionally, under identical pre- and post-radia-
tion test conditions, International Rectifier’s RAD HARD
HEXFETs retain identical electrical specifications up
to 1 x 105 Rads (Si) total dose. No compensation in
gate drive circuitry is required.These devices are also
capable of surviving transient ionization pulses as high
as 1 x 1012 Rads (Si)/Sec, and return to normal opera-
tion within a few microseconds. Since the SEE pro-
cess utilizes International Rectifier’s patented HEXFET
technology, the user can expect the highest quality
and reliability in the industry.
IRHM7360SE
400V
0.20Ω
22A
Features:
■ Radiation Hardened up to 1 x 105 Rads (Si)
■ Single Event Burnout (SEB) Hardened
■ Single Event Gate Rupture (SEGR) Hardened
■ Gamma Dot (Flash X-Ray) Hardened
■ Neutron Tolerant
■ Identical Pre- and Post-Electrical Test Conditions
■ Repetitive Avalanche Rating
■ Dynamic dv/dt Rating
■ Simple Drive Requirements
■ Ease of Paralleling
■ Hermetically Sealed
■ Electrically Isolated
■ Ceramic Eyelets
RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as volt-
age control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high-energy pulse circuits
in space and weapons environments.
Pre-Radiation
Absolute Maximum Ratings
Parameter
IRHM7360SE
Units
I
D
@ V
= 12V, T = 25°C Continuous Drain Current
22
GS
C
I
@ V
= 12V, T = 100°C Continuous Drain Current
14
A
D
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
88
DM
@ T = 25°C
P
D
250
2.0
W
W/K ➄
V
C
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
±20
500
22
GS
E
mJ
AS
I
A
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
25
mJ
AR
dv/dt
4.0
V/ns
T
-55 to 150
J
T
Storage Temperature Range
Lead Temperature
STG
oC
g
(0.063 in. (1.6mm) from
case for 10 sec.)
9.3 (typical)
300
Weight
To Order
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Pre-Radiation
IRHM7360SE Device
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min. Typ. Max. Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
400
—
—
—
—
V
V
= 0V, I = 1.0 mA
D
DSS
GS
V/°C Reference to 25°C, I = 1.0 mA
∆BV
/∆T
Temperature Coefficient of Breakdown
Voltage
0.45
DSS
J
D
R
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
2.5
4.0
—
—
—
—
—
—
—
0.20
0.21
4.5
—
50
250
V
= 12V, I =14A
DS(on)
GS D
➃
Ω
V
S ( )
V
= 12V, I = 22A
GS D
V
g
V
V
= V , I = 1.0 mA
GS(th)
fs
DS
DS
GS
D
Ω
> 15V, I
= 14A ➃
DS
I
V
= 0.8 x Max Rating,V
= 0V
DSS
DS GS
µA
—
V
= 0.8 x Max Rating
DS
V
= 0V, T = 125°C
GS
J
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
8.7
100
-100
180
75
100
35
100
100
100
—
V
= 20V
GS
GSS
nA
nC
I
V
GS
= -20V
GSS
Q
Q
Q
V
=12V, I = 22A
GS D
V = Max. Rating x 0.5
DS
g
gs
gd
t
V
= 200V, I =22A,
d(on)
DD D
t
R = 2.35Ω
G
r
ns
t
d(off)
t
f
Measured from the
Modified MOSFET
symbol showing the
internal inductances.
L
D
S
drain lead, 6mm (0.25
in.) from package to
center of die.
nH
pF
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
L
Internal Source Inductance
—
8.7
—
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
7500
1200
500
—
—
—
V
= 0V, V
= 25V
f = 1.0 MHz
iss
oss
rss
GS DS
Source-Drain Diode Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
—
—
—
—
22
88
Modified MOSFET symbol showing the
integral reverse p-n junction rectifier.
S
SM
A
V
t
Q
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.4
750
16
V
ns
µC
T = 25°C, I = 22A, V
= 0V ➃
j
SD
rr
RR
S
GS
T = 25°C, I = 22A, di/dt ≤ 100A/µs
j
F
V
≤ 50V ➃
DD
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min. Typ. Max. Units
Test Conditions
R
R
Junction-to-Case
Junction-to-Ambient
Case-to-Sink
—
—
—
—
0.50
thJC
thJA
—
48 K/W➄
RthCS
0.21
—
Typical socket mount
To Order
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IRHM7360SE Device
Radiation Characteristics
Radiation Performance of Rad Hard HEXFETs
International Rectifier Radiation Hardened HEX-
FETs are tested to verify their hardness capability.
The hardness assurance program at International
Rectifier uses two radiation environments.
Both pre- and post-radiation performance are tested
and specified using the same drive circuitry and test
conditions in order to provide a direct comparison. It
should be noted that at a radiation level of 1 x 105
Rads (Si), no change in limits are specified in DC
parameters.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019. International Rectifier has imposed a
standard gate voltage of 12 volts per note 6 and a
High dose rate testing may be done on a special
request basis, using a dose rate up to 1 x 1012 Rads
(Si)/Sec.
V
DSS
bias condition equal to 80% of the device
rated voltage per note 7. Pre- and post-radiation
limits of the devices irradiated to 1 x 105 Rads (Si)
are identical and are presented in Table 1. The val-
ues in Table 1 will be met for either of the two low
dose rate test circuits that are used.
International Rectifier radiation hardened HEXFETs
have been characterized in neutron and heavy ion
Single Event Effects (SEE) environments. Single
Event Effects characterization is shown in Table 3.
Table 1. Low Dose Rate ➅ ➆
IRHM7360SE
Parameter
100K Rads (Si)
Units
V
Test Conditions ➉
min.
max.
BV
V
Drain-to-Source Breakdown Voltage 400
—
4.5
V
= 0V, I = 1.0 mA
GS D
DSS
Gate Threshold Voltage ➃
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source ➃
2.5
—
—
—
—
V
= V , I = 1.0 mA
GS
GS(th)
DS
GS
D
I
100
-100
50
V
= 20V
GSS
nA
I
V
GS
= -20V
GSS
I
µA
V
= 0.8 x Max Rating, V
= 0V
DSS
DS
GS
R
0.20
Ω
V
= 12V, I =14A
GS
D
DS(on)1
On-State Resistance One
V
SD
Diode Forward Voltage ➃
—
1.35
V
T
C
= 25°C, I = 22A,V
= 0V
S
GS
Table 2. High Dose Rate ➇
1011 Rads (Si)/sec 1012 Rads (Si)/sec
Parameter
Drain-to-Source Voltage
Min. Typ Max. Min. Typ. Max. Units
Test Conditions
Applied drain-to-source voltage
V
DSS
—
—
320
—
—
320
V
during gamma-dot
I
—
—
20
6.4
—
—
—
16
—
—
—
137
6.4
—
—
—
A
Peak radiation induced photo-current
PP
di/dt
2.3 A/µsec Rate of rise of photo-current
µH Circuit inductance required to limit di/dt
L
—
1
Table 3. Single Event Effects ➈
LET (Si)
Fluence Range
V
Bias
(V)
320
V
Bias
GS
(V)
-5
DS
Parameter
Typ.
400
Units
V
Ion
Ni
(MeV/mg/cm2) (ions/cm2) (µm)
BV
28
1 x 105
~35
DSS
To Order
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IRHM7360SE Device
Radiation Characteristics
➅ Total Dose Irradiation with V
Bias.
GS
= 0 during
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
12 volt V
applied and V
DS
GS
irradiation per MIL-STD-750, method 1019.
Refer to current HEXFET reliability report.
➆ Total Dose Irradiation with V Bias.
➁ @ V
= 50V, Starting T = 25°C,
J
DS
(pre-radiation)
DD
= [0.5
2
V
= 0.8 rated BV
E
L
(I ) [BV
/(BV
DSS
-V )]
DSS DD
G
DS
applied and V
DSS
= 0 during irradiation per
AS
*
*
*
L
Peak I = 22A, V
GS
= 12V, 25 ≤ R ≤ 200Ω
GS
MlL-STD-750, method 1019.
L
➂ I
≤ 22A, di/dt ≤ 170 A/µs,
SD
➇ This test is performed using a flash x-ray
source operated in the e-beam mode (energy
~2.5 MeV), 30 nsec pulse.
V
≤ BV , T ≤ 150°C
DD
DSS
J
Suggested RG = 2.35Ω
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➈ Process characterized by independent laboratory.
➄ K/W = °C/W
➉ All Pre-Radiation and Post-Radiation test
conditions are identical to facilitate direct
comparison for circuit applications.
W/K = W/°C
Case Outline and Dimensions
Optional leadforms for outline TO-254
Legend
Legend
1 - Drain
1 - Drain
2 - Source
2 - Source
3 - Gate
3 - Gate
Notes:
Notes:
1. Dimensioning and Tolerancing per ANSI Y14.5M-1982
2. All dimensions are show in millimeters (inches).
1. Dimensioning and Tolerancing per ANSI Y14.5M-1982
2. All dimensions are show in millimeters (inches).
3. Leadform is available in either orientation.
Conforms to JEDEC Outline TO-254AA
Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted,
machined, or have other operations performed on them which
will produce beryllia or beryllium dust. Furthermore, beryllium
oxides packages shall not be placed in acids that will produce
fumes containing beryllium.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
4/96
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