JANSR2N7392 [INFINEON]
RADIATION HARDENED POWER MOSFET THRU - HOLE ( TO - 254AA ); 抗辐射功率MOSFET直通 - 孔（ TO - 254AA ）
| 型号： | JANSR2N7392 |
| 厂家： | 
Infineon |
| 描述： | RADIATION HARDENED POWER MOSFET THRU - HOLE ( TO - 254AA ) |
| 文件： | 总8页 (文件大小：271K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
THRU-HOLE (TO-254AA)
R
A
D
H
a
r
d
H
E
X
F
E
T®
T
E
C
H
N
O
L
O
G
Y
Absolute Maximum Ratings
Parameter
PD-91394E
IRHM7460SE
JANSR2N7392 500V
N-CHANNEL
RADIATION HARDENED
POWER MOSFET
REF: MIL-PRF-19500/661
Product Summary
Part Number Radiation Level RDS(on)
ID
QPL Part Number
JANSR2N7392
IRHM7460SE
100K Rads (Si)
0.32Ω
18A
TO-254AA
International Rectifiers RADHard HEXFET® MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low RDS(on) and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain
all of the well established advantages of MOSFETs such
as voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
TM
Features:
!
!
!
!
!
!
!
!
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Pre-Irradiation
Units
I
@ V
@ V
= 12V, T = 25°C Continuous Drain Current
C
18
D
GS
A
I
= 12V, T = 100°C Continuous Drain Current
C
11.7
72
D
GS
I
Pulsed Drain Current ➀
Max. Power Dissipation
DM
P
@ T = 25°C
C
250
W
W/°C
V
D
Linear Derating Factor
2.0
V
Gate-to-Source Voltage
±20
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
500
mJ
A
AS
I
18
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
25
mJ
V/ns
AR
dv/dt
3.8
T
-55 to 150
J
T
Storage Temperature Range
oC
STG
Lead Temperature
Weight
300 (0.063 in. (1.6mm) from case for 10 sec.)
9.3 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
5/17/01
IRHM7460SE
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
500
V
V
= 0V, I = 1.0mA
D
GS
∆BV
/∆T Temperature Coefficient of Breakdown
0.66
V/°C
Reference to 25°C, I = 1.0mA
D
DSS
J
Voltage
R
Static Drain-to-Source On-State
Resistance
0.32
0.36
4.5
V
= 12V, I = 11.7A
DS(on)
GS D
➀
Ω
V
= 12V, I = 18A
D
GS
V = V , I = 1.0mA
DS
V
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.5
6.0
V
GS(th)
GS
> 15V, I
D
Ω
g
S ( )
V
= 11.7A ➀
DS
= 400V ,V =0V
fs
DS
V
I
50
DSS
DS
GS
= 400V,
µA
250
V
DS
= 0V, T = 125°C
V
GS
J
= 2V0V
I
I
Gate-to-Source
Leakage
Forward
-100
180
30
100
nA
GSS
GSS
GS
GS
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Turn-On Delay Time
Rise Time
6.8
V
= -20V
Q
Q
Q
V
=12V, I = 18A
g
gs
gd
d(on)
r
GS D
V
nC
= 250V
DS
95
t
t
t
t
29
V
=250V, I =18A,
D
DD
=12V, R = 2.35Ω
93
V
GS
G
ns
Turn-Off Delay Time
Fall Time
90
d(off)
f
59
L
S
+ L
Total Inductance
D
nH
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
C
C
C
Input Capacitance
3500
730
V
GS
= 0V, V = 25V
DS
f = 1.0MHz
iss
Output Capacitance
pF
oss
rss
Reverse Transfer Capacitance
260
Source-Drain Diode Ratings and Characteristics
Min Typ Max Units
Parameter
Test Conditions
I
I
Continuous Source Current (Body Diode)
18
72
S
A
Pulse Source Current (Body Diode) ➀
SM
V
t
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
1.8
800
16
V
T = 25°C, I = 18A, V
j
= 0V ➀
SD
S
GS
nS
µC
T = 25°C, I = 18A, di/dt ≤ 100A/µs
j
rr
F
Q
V
DD
≤ 50V ➀
RR
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
Case-to-Sink
0.21
0.50
thJC
thCS
°C/W
R
Junction-to-Ambient
48
Typical socket mount
thJA
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com
GS
GS
GS
GS
GS
Pre-Irradiation
IRHM7460SE
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➀➀
Parameter
100K Rads (Si)
Units
Test Conditions "
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
500
2.0
V
GS
= 0V, I = 1.0mA
D
DSS
V
V
4.5
V
= V , I = 1.0mA
DS D
GS(th)
GS
I
Gate-to-Source
Leakage
Forward
100
V
= 20V
GSS
GS
nA
µA
I
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source# $
-100
50
V
GS
= -20V
GSS
I
V
= 400V, V =0V
GS
DSS
DS
R
DS(on)
On-State Resistance (TO-3)
0.32
Ω
V
GS
= 12V, I = 11.7A
D
R
Static Drain-to-Source# $
DS(on)
On-State Resistance (TO-254)
Diode Forward Voltage#$
0.32
1.8
Ω
V
= 12V, I = 11.7A
D
GS
V
V
V
= 0V, I = 18A
D
GS
SD
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
V (V)
DS
Ion
LET
Energy
Range
(µm)
2
MeV/(mg/cm )) (MeV)
@V =0V @V =-5V @V =-10V @V =-15V @V =-20V
Cu
Br
28
285
305
43
39
375
350
375
350
375
375
325
375
300
36.8
350
Ni
26.6
265
42
375
400
300
200
100
0
Cu
Br
Ni
0
-5
-10
VGS
-15
-20
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHM7460SE
Pre-Irradiation
100
10
1
100
VGS
15V
VGS
TOP
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
12V
10V
9.0V
8.0V
7.0V
6.0V
10
1
BOTTOM 5.0V
BOTTOM 5.0V
5.0V
5.0V
0.1
0.01
20us PULSE WIDTH
20us PULSE WIDTH
T = 150oC
J
T = 25 oC
J
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
10
1
2.5
2.0
1.5
1.0
0.5
0.0
18A
=
I
D
T = 150oC
J
T = 25oC
J
V
= 50V
DS
20µs PULSE WIDTH
V
=12V
GS
0.1
5.0
6.0
7.0
8.0
9.0 10.0 11.0 12.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
GS
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
4
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Pre-Irradiation
IRHM7460SE
8000
20
16
12
8
V
= 0V,
f = 1MHz
GS
I
D
= 18A
C
= C + C
C
SHORTED
iss
gs
gd , ds
V
V
V
= 400V
= 250V
= 100V
C
= C
gd
DS
DS
DS
rss
C
= C + C
oss
ds
gd
6000
4000
2000
0
C
iss
C
C
oss
rss
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
0
40
80
120
160
200
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
100
10
1
10us
°
T = 25 C
J
100us
1ms
°
T = 25 C
C
°
T = 150 C
J
10ms
V
= 0 V
GS
1.8
Single Pulse
0.1
0.2
0.6
1.0
1.4
2.2
10
100
1000
10000
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-to-Source Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
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5
IRHM7460SE
Pre-Irradiation
RD
20
16
12
8
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
4
DS
90%
0
25
50
T
75
100
125
150
, Case Temperature (o C)
C
10%
V
GS
t
t
t
t
f
d(on)
r
d(off)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
1
0.1
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
2
DM
SINGLE PULSE
0.01
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t / t
1
2. Peak T = P
x Z
+ T
C
J
DM
thJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHM7460SE
1200
1000
800
600
400
200
0
I
D
TOP
8A
11A
15V
BOTTOM 18A
DRIVER
+
L
V
DS
D.U.T
.
R
G
V
DD
-
I
A
AS
V
20V
GS
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temperature( C)
J
V
(BR)DSS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHM7460SE
Pre-Irradiation
Footnotes:
➀➀➀Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➀➀➀Total Dose Irradiation with V Bias.
➀➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
12 volt V
applied and V
➀➀➀V
DD
= 50V, starting T = 25°C, L= 3.1 mH
J
GS DS
irradiation per MIL-STD-750, method 1019, condition A.
Peak I = 18A, V
L
= 12V
GS
➀➀ Total Dose Irradiation with V Bias.
400 volt V applied and V
DS GS
irr adiation per MlL-STD-750, method 1019, condition A.
➀➀ I
SD
≤ 18A, di/dt ≤110A/µs,
DS
= 0 during
V
DD
≤ 500V, T ≤ 150°C
J
Case Outline and Dimensions TO-254AA
.12 ( .005 )
13.84 ( .545 )
13.59 ( .535 )
-B-
6.60 ( .260 )
6.32 ( .249 )
3.78 ( .149 )
3.53 ( .139 )
-A-
1.27 ( .050 )
1.02 ( .040 )
20.32 ( .800 )
20.07 ( .790 )
17.40 ( .685 )
16.89 ( .665 )
13.84 ( .545 )
13.59 ( .535 )
LEGEND
1 - COLL
31.40 ( 1.235 )
30.39 ( 1.199 )
2 - EMIT
3 - GATE
1
2
3
-C-
1.14 ( .045 )
3X
3.81 ( .150 )
0.89 ( .035 )
3.81 ( .150 )
2X
.50 ( .020 )
.25 ( .010 )
M
M
C
C
A
M B
LEGEND
1- DRAIN
2- SOURCE
3- GATE
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids
that will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 05/01
8
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相关型号：
JANSR2N7402
Power Field-Effect Transistor, 3A I(D), 500V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA
INFINEON
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