IRL620STRL [INFINEON]
Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN;
| 型号： | IRL620STRL |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN 开关 晶体管 |
| 文件： | 总9页 (文件大小：302K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD -9.1218
IRL620S
HEXFET® Power MOSFET
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Logic-Level Gate Drive
VDSS = 200V
RDS(on) = 0.80Ω
ID = 5.2A
R
DS(on)
Specified at V =4V & 5V
GS
Fast Switching
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The SMD-220 is a surface-mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest possible
on-resistance in any existing surface-mount package. The SMD-220 is suitable for
high current applications because of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface-mount application.
SMD-220
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 5.0 V
Continuous Drain Current, VGS @ 5.0 V
Pulsed Drain Current
5.2
A
3.3
21
PD @TC = 25°C
PD @TA = 25°C
Power Dissipation
50
W
Power Dissipation (PCB Mount)**
Linear Derating Factor
3.1
0.40
W/°C
Linear Derating Factor (PCB Mount)**
Gate-to-Source Voltage
0.025
VGS
±10
V
mJ
A
EAS
Single Pulse Avalanche Energy
Avalanche Current
125
IAR
5.2
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
5.0
5.0
mJ
V/ns
dv/dt
TJ, TSTG
-55 to + 150
300 (1.6mm from case)
°C
Thermal Resistance
Parameter
Junction-to-Case
Min.
—
Typ.
—
Max. Units
2.5
RθJC
RθJA
RθJA
Junction-to-Ambient (PCB Mount)**
Junction-to-Ambient
—
—
40
62
°C/W
—
—
** When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques, refer
to Application Note AN-994.
Revision 0
IRL620S
Electrical Characteristics @ T = 25°C (unless otherwise specified)
J
Parameter
Min. Typ. Max. Units Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
200
—
—
—
1.0
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
0.27
—
—
—
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
0.80
1.0
2.0
—
VGS = 10.0V, ID = 3.1A
Ω
—
VGS = 4.0V, ID = 2.6A
VGS(th)
gfs
Gate Threshold Voltage
—
V
S
VDS = VGS, ID = 250µA
VDS = 50V, ID = 3.1A
VDS = 200V, VGS = 0V
VDS = 320V, VGS = 0V, TJ = 125°C
VGS = 10V
Forward Transconductance
Drain-to-Source Leakage Current
—
IDSS
—
25
µA
nA
—
250
100
-100
16
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
—
—
VGS = -10V
Qg
—
ID = 5.2A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
—
2.9
9.6
—
nC
VDS = 160V
—
VGS = 5.0V, See Fig. 6 and 13
VDD = 100V
4.2
31
18
17
4.5
Rise Time
—
ID = 5.2A
ns
td(off)
tf
Turn-Off Delay Time
—
RG = 9.0Ω
Fall Time
—
RD = 20Ω, See Fig. 10
LD
Internal Drain Inductance
—
Between lead,
6mm (0.25in.)
from package
and center of
nH
LS
Internal Source Inductance
—
7.5
—
die contact
Ciss
Coss
Crss
Input Capacitance
—
—
—
360
91
—
—
—
VGS = 0V
Output Capacitance
pF
VDS = 25V
Reverse Transfer Capacitance
27
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units Conditions
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
—
—
5.2
showing the
A
ISM
Pulsed Source Current
(Body Diode)
integral reverse
—
—
—
21
p-n junction diode.
TJ = 25°C, IS = 5.2A, VGS = 0V
TJ = 25°C, IF = 5.2A
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
—
—
—
1.8
V
180 270
1.1 1.7
ns
Qrr
ton
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD ≤ 5.2A, di/dt ≤ 95A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
VDD = 50V, starting TJ = 25°C, L = 6.9mH
Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = 5.2A. (See Figure 12)
IRL620S
Fig 1. Typical Output Characteristics,
Fig 2. Typical Output Characteristics,
TC = 25oC
TC = 150oC
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
IRL620s
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
IRL620S
Fig 10a. Switching Time Test Circuit
Fig 9. Maximum Drain Current Vs.
Fig 10b. Switching Time Waveforms
Case Temperature
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRL620S
Fig 12a. Unclamped Inductive Test Circuit
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
IRL620S
Fig 14. Peak Diode Recovery dv/dt Test Circuit
IRL620S
Package Outline SMD-220
Part Marking Information SMD-220
IRL620S
Package Outline SMD-220 Tape and Reel
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: (44) 0883 713215
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: (905) 475 1897 IR GERMANY:
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1145 10111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: (03)3983 0641
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, 0316 Tel: 65 221 8371
Data and specifications subject to change without notice.
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