IRL6283MPBF_15 [INFINEON]
Environmentally Friendly Product;
| 型号： | IRL6283MPBF_15 |
| 厂家： | 
Infineon |
| 描述： | Environmentally Friendly Product |
| 文件： | 总9页 (文件大小：508K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
StrongIRFET™
IRL6283MTRPbF
DirectFET® N-Channel Power MOSFET
Applications
•ORing, eFuse, and high current
load switch
Typical values (unless otherwise specified)
VDSS
VGS
Vgs(th)
RDS(on)
RDS(on)
RDS(on)
•Load switch for battery
application
20V max ±12V max 0.8V
0.50mΩ@10V 0.65mΩ@4.5V 1.1mΩ@2.5V
•Inverter switches for DC motor
application
S
S
D
D
Features and Benefits
S
G
•Environmentally Friendly Product
•RoHs compliant containing no Lead, no Bromide
and no Halogen
MD
•Very Low RDS(on)
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MT
MP
MC
MD
Description
The IRL6283MTRPbF combines the latest HEXFET® N-Channel Power MOSFET Silicon technology with the advanced DirectFET®
packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The Direct-
FET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and
processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best
thermal resistance by 80%.
Base part number
Package Type
Standard Pack
Orderable Part Number
Form
Tape and Reel
Quantity
4800
IRL6283MTRPbF
DirectFET Medium Can
IRL6283MTRPbF
Absolute Maximum Ratings
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
Max.
±12
38
Units
V
VGS
ID @ TA = 25°C
ID @ TA = 70°C
30
A
ID @ TC = 25°C
211
305
406
30
IDM
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
2.0
1.8
1.6
1.4
1.2
1.0
0.8
14.0
12.0
10.0
8.0
I = 30A
I
= 38A
D
D
V
V
= 16V
= 10V
DS
DS
VDS= 4.0V
6.0
T
= 125°C
J
4.0
T
= 25°C
J
2.0
0.6
0.4
0.0
0
1
2
3
4
5
6
7
8
9
10 11 12
0
50
100
150
200
250
300
Q
Total Gate Charge (nC)
V
Gate -to -Source Voltage (V)
G
GS,
Fig 1. Typical On-Resistance vs. Gate Voltage
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
Notes:
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.88mH, RG = 50Ω, IAS = 30A.
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
1
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IRL6283MTRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
20
Typ.
–––
4.8
0.50
0.65
1.1
0.8
-3.9
–––
Max. Units
–––
––– mV/°C Reference to 25°C, ID = 1.0mA
Conditions
VGS = 0V, ID = 250µA
BVDSS
ΔBVDSS/ΔTJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
V
–––
–––
–––
–––
0.5
0.75
0.87
1.5
VGS = 10V, ID = 50A
VGS = 4.5V, ID = 50A
GS = 2.5V, ID = 50A
RDS(on)
Static Drain-to-Source On-Resistance
mΩ
V
VGS(th)
ΔVGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.1
V
VDS = VGS, ID = 100µA
–––
–––
––– mV/°C
1.0
150
100
-100
–––
158
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
µA VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ=125°C
nA VGS = 12V
–––
–––
–––
320
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
105
9.7
8.9
35
51
44
50
1.1
23
160
116
192
8292
2012
1526
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
VGS = -12V
gfs
Qg
S
VDS = 10V, ID = 30A
V
V
DS = 10V
GS = 4.5V
Qgs1
Qgs2
Qgd
Qodr
Qsw
Qoss
RG
Pre-VthGate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
nC
ID = 30A
nC VDS = 16V, VGS = 0V
Ω
Gate Resistance
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VDD = 20V, VGS = 4.5V
ns ID = 30A
RG = 1.8Ω
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 0V
pF
VDS = 10V
ƒ = 1.0MHz
Diode Characteristics
Parameter
Min.
Typ.
Max. Units
Conditions
D
IS
Continuous Source Current
(Body Diode)
–––
–––
211
A
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
ISM
Pulsed Source Current
(Body Diode)
–––
–––
305
S
VSD
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
48
84
1.2
72
126
V
TJ = 25°C, IS = 30A, VGS = 0V
ns TJ = 25°C, IF = 30A,VDD = 10V
di/dt = 200A/µs
nC
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRL6283MTRPbF
Absolute Maximum Ratings
Parameter
Power Dissipation
Power Dissipation
Max.
Units
PD @TA = 25°C
PD @TA = 70°C
2.1
1.3
W
PD @TC = 25°C
TP
TJ
TSTG
Power Dissipation
63
270
-40 to + 150
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
°C
Thermal Resistance
Parameter
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Typ.
Max.
60
–––
–––
1.97
–––
Units
°C/W
W/°C
–––
12.5
20
–––
1.0
RθJA
RθJA
RθJA
RθJC
Junction-to-PCB Mounted
Linear Derating Factor
RθJ-PCB
0.02
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
0.1
0.01
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t
, Rectangular Pulse Duration (sec)
1
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Mounted on minimum footprint full size board with metalized
back and with small clip heat sink.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
Rθ is measured at TJ of approximately 90°C.
Used double sided cooling , mounting pad with large heat sink.
3
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IRL6283MTRPbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
4.5V
2.5V
2.25V
2.0V
1.8V
1.6V
1.4V
4.5V
2.5V
2.25V
2.0V
1.8V
1.6V
1.4V
BOTTOM
BOTTOM
1.4V
1.4V
60µs PULSE WIDTH
Tj = 25°C
≤
60µs PULSE WIDTH
Tj = 150°C
≤
1
1
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 5. Typical Output Characteristics
Fig 4. Typical Output Characteristics
1000
2.0
1.5
1.0
0.5
I
= 38A
V
= 15V
D
DS
≤
60µs PULSE WIDTH
V
V
= 10V
GS
GS
100
10
1
= 4.5V
T
T
T
= 150°C
= 25°C
= -40°C
J
J
J
0.1
0.4
0.8
1.2
1.6
2.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 7. Normalized On-Resistance vs. Temperature
Fig 6. Typical Transfer Characteristics
2.4
100000
10000
1000
V
= 0V,
= C
f = 1 MHZ
GS
T
= 25°C
J
C
C
C
+ C , C
SHORTED
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
iss
gs
gd
ds
= C
rss
oss
gd
= C + C
ds
gd
Vgs = 2.0V
Vgs = 2.5V
Vgs = 3.5V
Vgs = 4.5V
Vgs = 6.0V
Vgs = 8.0V
Vgs = 10V
C
iss
C
C
oss
rss
0
40
80
120
160
200
1
10
, Drain-to-Source Voltage (V)
100
V
DS
I
, Drain Current (A)
D
Fig 8. Typical Capacitance vs. Drain-to-Source Voltage
Fig 9. Typical On-Resistance vs. Drain Current and Voltage
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IRL6283MTRPbF
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
1msec
100µsec
10msec
T
T
T
= 150°C
= 25°C
= -40°C
J
J
J
1
DC
0.1
0.01
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
GS
1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
, Source-to-Drain Voltage (V)
0.01
0.1
1
10
100
V
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 11. Maximum Safe Operating Area
Fig 10. Typical Source-Drain Diode Forward Voltage
250
1.2
200
150
100
50
1.0
0.8
I
= 100µA
D
0.6
0.4
0.2
0
25
50
T
75
100
125
150
-75 -50 -25
0
25 50 75 100 125 150
, Temperature ( °C )
J
, Case Temperature (°C)
T
C
Fig 13. Typical Threshold Voltage vs.
Fig 12. Maximum Drain Current vs. Case Temperature
Junction Temperature
2000
I
D
TOP
1.8A
2.6A
1600
1200
800
400
0
BOTTOM 30A
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
Fig 14. Maximum Avalanche Energy vs. Drain Current
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IRL6283MTRPbF
Id
Vds
Vgs
VDD
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 15a. Gate Charge Test Circuit
Fig 15b. Gate Charge Waveform
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
I
0.01
Ω
t
p
AS
Fig 16a. Unclamped Inductive Test Circuit
Fig 16b. Unclamped Inductive Waveforms
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
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IRL6283MTRPbF
Fig 18. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
DirectFET® Board Footprint, MD Outline
(Medium Size Can, D-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
G
S
D
D
D
D
S
S
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRL6283MTRPbF
DirectFET® Outline Dimension, MD Outline
(Medium Size Can, D-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all
recommendations for stencil and substrate designs.
DIMENSIONS
METRIC
IMPERIAL
CODE MIN MAX
MIN MAX
A
B
C
D
E
F
6.25 6.35
4.80 5.05
3.85 3.95
0.35 0.45
0.58 0.62
0.58 0.62
0.93 0.97
1.28 1.32
0.38 0.42
1.08 1.12
0.88 0.92
2.08 2.12
0.246 0.250
0.189 0.199
0.152 0.156
0.014 0.018
0.023 0.024
0.023
0.024
G
H
J
0.037 0.038
0.050 0.052
0.015 0.017
0.043 0.044
0.035 0.036
0.082 0.083
J1
K
L
M
R
P
0.535 0.595 0.021
0.023
0.02 0.08 0.0008 0.0031
0.08 0.17
0.003 0.007
Dimensions are shown in
millimeters (inches)
DirectFET® Part Marking
LOGO
GATE MARKING
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRL6283MTRPbF
DirectFET® Tape & Reel Dimension (Showing component orientation).
LOADED TAPE FEED DIRECTION
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRL6283MTRPBF). For 1000 parts on 7"
reel, order IRL6283MTR1PBF
REEL DIMENSIONS
DIMENSIONS
METRIC
STANDARD OPTION (QTY 4800)
METRIC
IMPERIAL
TR1 OPTION (QTY 1000)
METRIC
IMPERIAL
IMPERIAL
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
MIN
MAX
0.319
0.161
0.484
0.219
0.209
0.264
N.C
MIN
MAX
8.10
4.10
12.30
5.55
5.30
6.70
N.C
CODE
MIN
12.992
0.795
0.504
0.059
3.937
N.C
MAX
N.C
MIN
6.9
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
MIN
MAX
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
MIN
MAX
N.C
A
B
C
D
E
F
0.311
0.154
0.469
0.215
0.201
0.256
0.059
0.059
7.90
3.90
11.90
5.45
5.10
6.50
1.50
1.50
A
B
C
D
E
F
330.0
20.2
12.8
1.5
177.77
19.06
13.5
1.5
0.75
0.53
0.059
2.31
N.C
N.C
N.C
0.520
N.C
12.8
N.C
100.0
N.C
58.72
N.C
N.C
N.C
0.724
0.567
0.606
13.50
12.01
12.01
G
H
0.488
0.469
0.47
0.47
12.4
11.9
11.9
11.9
G
H
1.60
0.063
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Qualification Information†
MSL1
DirectFET
Moisture Sensitivity Level
RoHS Compliant
(per JEDEC J-STD-020D††)
Yes
†
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Revision History
Date
Comments
Converted the data sheet to StrongIRFET template.
•
•
•
2/4/2014
9/24/2014
Updated the schematic drawing, on page 1.
Updated notes on page 2 & page 3
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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September 24, 2014
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