IRL6297SDPBF_技术文档

IRL6297SDPbF

DirectFET^®Dual N-Channel Power MOSFET

Typical values (unless otherwise specified)

Applications

V_DSS

20V max ±12V max

V_GS

R_DS(on)

l Charge and Discharge Switch for Battery Application

l Isolation Switch for Input Power or Battery Application

3.8mΩ@4.5V 5.4mΩ@2.5V

Q_{g tot}

Q_gd

Q_gs2

Q_rr

Q_ossV_gs(th)

Features and Benefits

27nC

9.5nC 1.4nC

21nC

15nC

0.80V

l Environmentaly Friendly Product

l RoHs Compliant, Halogen Free

l Dual Common-Drain N-Channel MOSFETs Provides

High Level of Integration and Very Low RDS(on)

G

S

G

S

D

DirectFET^®ISOMETRIC

SA

Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

SQ

SX

ST

MQ

MX

MT

MP

MC

SA

Description

The IRL6297SDPbF combines the latest HEXFET® N-Channel Power MOSFET Silicon technology with the advanced DirectFET^®

packaging to achieve the lowest on-state resistance in a package that has the footprint smaller than an SO-8 and only 0.6 mm profile. The

DirectFET^®package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,

infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and

processes. The DirectFET^®package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best

thermal resistance by 80%.

Base Part Number

Package Type

Standard Pack

Orderable part number

Form

Tape and Reel

Quantity

4800

IRL6297SDPbF

DirectFET Small Can

IRL6297SDTRPbF

Absolute Maximum Ratings

Max.

20

Parameter

Units

V_DS

Drain-to-Source Voltage

V

±12

15

V

Gate-to-Source Voltage

GS

Continuous Drain Current, V_GS@ 10V

I

@ T_A= 25°C

D

12

@ T_A= 70°C

@ T_C= 25°C

A

58

140

Pulsed Drain Current

DM

20

15

10

5

14.0

I = 12A

I

= 15A

D

V

= 16V

D

12.0

10.0

8.0

DS

= 10V

DS

= 4.0V

6.0

T

= 125°C

J

4.0

2.0

T

= 25°C

J

0

0.0

0

1

2

3

4

5

6

7

8

9

10 11 12

0

10

20

G

30

40

50

60

70

Q

Total Gate Charge (nC)

V

Gate -to -Source Voltage (V)

GS,

Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage

Fig 1. Typical On-Resistance vs. Gate Voltage

Notes:

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET Website.

Surface mounted on 1 in. square Cu board, steady state.

T_Cmeasured with thermocouple mounted to top (Drain) of part.

ꢀ Repetitive rating; pulse width limited by max. junction temperature.

September 5, 2013

1

IRL6297SDPbF

Static @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

BV_DSS

∆Β

R_DS(on)

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

20

–––

6.1

3.8

5.4

–––

V

V_GS= 0V, I_D= 250µA

∆

V_DSS/ T_J

–––

––– mV/°C Reference to 25°C, I_D= 1.0mA

4.9

6.9

V_GS= 4.5V, I_D= 15A

V_GS= 2.5V, I_D= 12A

Ω

m

V_GS(th)

Gate Threshold Voltage

0.50 0.80 1.10

V

V_DS= V_GS, I_D= 35µA

∆

V_GS(th)/ T_J

Gate Threshold Voltage Coefficient

Drain-to-Source Leakage Current

–––

60

-4.1

–––

54

––– mV/°C

I_DSS

1.0

µA

V_DS= 16V, V_GS= 0V

V_DS= 16V, V_GS= 0V, T_J= 150°C

V_GS= 12V

150

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Forward Transconductance

Total Gate Charge

100

nA

-100

V_GS= -12V

gfs

Q_g

–––

S

V_DS= 10V, I_D=12A

V_DS= 10V, V_GS= 10V, I_D= 12A

–––

Q_g

Total Gate Charge

27

Q_gs1

Q_gs2

Q_gd

Q_godr

Q_sw

Q_oss

R_G

Pre- Vth Gate-to-Source Charge

Post -Vth Gate-to-Source Charge

Gate-to-Drain Charge

Gate Charge Overdrive

Switch charge (Q_gs2+ Q_gd)

Output Charge

2.2

1.4

9.5

13.9

10.9

15

V_DS= 10V

V_GS= 4.5V

I_D= 12A

nC

See Fig.15

nC

V

_DS= 16 V, V_GS= 0V

_DD= 10V, V_GS= 4.5V

Ω

Gate Resistance

1.8

8.8

29

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

Rise Time

I_D= 12A

R_G= 2.0

ns

Ω

Turn-Off Delay Time

41

See Fig.17

Fall Time

41

C_iss

C_oss

C_rss

Input Capacitance

––– 2245 –––

V_GS= 0V

pF

Output Capacitance

–––

610

395

–––

V_DS= 10V

ƒ = 1.0MHz

Reverse Transfer Capacitance

Diode Characteristics

Parameter

Min. Typ. Max. Units

Conditions

D

MOSFET symbol

showing the

I_S

Continuous Source Current

(Body Diode)

–––

25

A

G

integral reverse

p-n junction diode.

I_SM

Pulsed Source Current

(Body Diode)

140

S

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

–––

28

1.2

42

32

V

T_J= 25°C, I_S= 12A, V_GS= 0V

ns T_J= 25°C, I_F= 12A, V_DD= 10V

di/dt = 100 A/µs

nC

Q_rr

21

Notes:

Pulse width ≤ 400µs; duty cycle ≤ 2%.

September 5, 2013

2

IRL6297SDPbF

Absolute Maximum Ratings

Max.

Parameter

Units

1.7

P

@T_A= 25°C

@T_A= 70°C

@T_C= 25°C

Power Dissipation

D

P

J

1.1

W

25

270

Peak Soldering Temperature

Operating Junction and

T

-40 to + 150

°C

Storage Temperature Range

STG

Thermal Resistance

Parameter

Typ.

–––

12.5

20

Max.

72

Units

°C/W

W/°C

R_θJA

Junction-to-Ambient

R_θJA

Junction-to-Ambient

–––

5.1

R_θJA

R_θJC

Junction-to-Case

,

–––

1.0

R_θJ-PCB

Junction-to-PCB Mounted

Linear Derating Factor

–––

0.014

100

10

D = 0.50

0.20

0.10

0.05

0.02

0.01

1

0.1

0.01

0.001

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthja + Tc

SINGLE PULSE

( THERMAL RESPONSE )

1E-006

1E-005

0.0001

0.001

0.01

0.1

1

10

100

1000

t

, Rectangular Pulse Duration (sec)

1

Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Notes:

Used double sided cooling, mounting pad with large heatsink.

Mounted on minimum footprint full size board with metalized

back and with small clip heatsink.

R is measured at T_Jof approximately 90°C.

θ

Mounted on minimum footprint full size

board with metalized back and with small

clip heatsink (still air)

Surface mounted on 1 in. square Cu

board (still air).

Mounted to a PCB with small

clip heatsink (still air)

3

September 5, 2013

IRL6297SDPbF

1000

100

10

1000

100

10

VGS

10V

VGS

10V

TOP

4.5V

3.5V

3.0V

2.6V

2.4V

2.2V

2.0V

4.5V

3.5V

3.0V

2.6V

2.4V

2.2V

2.0V

BOTTOM

2.0V

60µs PULSE WIDTH

Tj = 25°C

≤

60µs PULSE WIDTH

Tj = 150°C

≤

1

0.01

0.1

1

10

100

0.01

0.1

1

10

100

V

, Drain-to-Source Voltage (V)

DS

V

, Drain-to-Source Voltage (V)

DS

Fig 4. Typical Output Characteristics

Fig 5. Typical Output Characteristics

1000

100

10

1.6

1.4

1.2

1.0

0.8

0.6

I

= -8.5A

V

= 10V

D

DS

V

= -10V

= -4.5V

GS

≤

60µs PULSE WIDTH

T

= 150°C

= 25°C

= -40°C

J

1

0.1

0

1

2

3

-60 -40 -20

0

20 40 60 80 100 120140 160

T

J

, Junction Temperature (°C)

V

, Gate-to-Source Voltage (V)

GS

Fig 7. Normalized On-Resistance vs. Temperature

Fig 6. Typical Transfer Characteristics

9.0

100000

10000

1000

V

= 0V,

= C

f = 1 MHZ

GS

T

= 25°C

Vgs = 2.5V

Vgs = 3.5V

Vgs = 4.5V

Vgs = 6.0V

Vgs = 8.0V

Vgs = 10V

Vgs = 12V

J

C

+ C , C

SHORTED

ds

iss

gs

gd

= C

8.0

7.0

6.0

5.0

4.0

3.0

rss

oss

gd

= C + C

ds

gd

C

iss

C

oss

rss

100

0

20

40

60

80

100

120

1

10

, Drain-to-Source Voltage (V)

100

V

DS

I , Drain Current (A)

D

Fig 9. Typical On-Resistance vs.

Fig 8. Typical Capacitance vs.Drain-to-Source Voltage

Drain Current and Gate Voltage

September 5, 2013

4

IRL6297SDPbF

1000

100

10

1000

100

10

OPERATION IN THIS AREA

LIMITED BY R

(on)

DS

100µsec

T

= 150°C

= 25°C

= -40°C

J

10msec

1msec

1

DC

0.1

0.01

Tc = 25°C

Tj = 150°C

Single Pulse

V

= 0V

GS

0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.01

0.1

1

10

100

V

, Source-to-Drain Voltage (V)

V

DS

, Drain-to-Source Voltage (V)

SD

Fig 10. Typical Source-Drain Diode Forward Voltage

Fig 11. Maximum Safe Operating Area

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

60

50

40

30

20

10

0

I

= 35µA

= 250µA

= 1.0mA

= 1.0A

D

-75 -50 -25

0

25 50 75 100 125 150

25

50

T

75

100

125

150

T , Temperature ( °C )

J

, Case Temperature (°C)

C

Fig 13. Typical Threshold Voltage vs. Junction

Fig 12. Maximum Drain Current vs. Case Temperature

Temperature

300

I

D

TOP

2.1A

3.0A

250

200

150

100

50

BOTTOM 12A

0

25

50

75

100

125

150

Starting T , Junction Temperature (°C)

J

Fig 14. Maximum Avalanche Energy vs. Drain Current

5

September 5, 2013

IRL6297SDPbF

Id

Vds

Vgs

L

VDD

VCC

DUT

0

Vgs(th)

20K

1K

Qgs1

Qgs2

Qgodr

Qgd

Fig 15a. Gate Charge Test Circuit

Fig 15b. Gate Charge Waveform

V

(BR)DSS

15V

t

p

DRIVER

L

V

DS

D.U.T

AS

R

G

+

-

V

DD

I

A

20V

I

t

0.01Ω

AS

p

Fig 16b. Unclamped Inductive Waveforms

Fig 16a. Unclamped Inductive Test Circuit

t

r

t

f

d(on)

d(off)

R_D

V_DS

V

GS

10%

V_GS

D.U.T.

R_G

+

V_DD

-

90%

10V

V_GS

V

DS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 17a. Switching Time Test Circuit

Fig 17b. Switching Time Waveforms

September 5, 2013

6

IRL6297SDPbF

Driver Gate Drive

P.W.

Period

D.U.T

Period

D =

+

-

*

=10V

V

GS

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

D.U.T. I Waveform

SD

+

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

-

+

-

D.U.T. V Waveform

DS

Diode Recovery

dv/dt

V

R_G

DD

V_DD

• di/dt controlled by R_G

Re-Applied

Voltage

+

-

• Driver same type as D.U.T.

Body Diode

Inductor Current

Forward Drop

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

Inductor Curent

I

SD

Ripple ≤ 5%

* V_GS= 5V for Logic Level Devices

Fig 18. Diode Reverse Recovery Test Circuit for N-Channel

HEXFET^®Power MOSFETs

DirectFET^®Board Footprint, SA Outline

(Small Size Can, A-Designation).

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.

This includes all recommendations for stencil and substrate designs.

G=GATE

D=DRAIN

S=SOURCE

D

S

G

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

7

September 5, 2013

IRL6297SDPbF

DirectFET^®Outline Dimension, SA Outline

(Small Size Can, A-Designation).

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all

recommendations for stencil and substrate designs.

DIMENSIONS

METRIC

IMPERIAL

CODE MIN MAX

MIN MAX

A

B

C

D

E

F

4.75 4.85 0.187 0.191

3.70 3.95 0.146 0.156

2.75 2.85 0.108 0.112

0.35 0.45 0.014 0.018

0.48 0.52 0.019 0.020

0.68 0.72 0.027 0.028

0.83 0.87 0.033 0.034

0.38 0.42 0.015 0.016

1.08 1.12 0.043 0.044

0.95 1.05 0.037 0.041

2.05 2.15 0.081 0.085

0.59 0.70 0.023 0.028

0.08 0.17 0.003 0.007

0.02 0.08 0.0008 0.0031

G

H

J

J1

K

L

M

P

R

DirectFET^®Part Marking

GATE MARKING

LOGO

PART NUMBER

BATCH NUMBER

DATE CODE

Line above the last character of

the date code indicates "Lead-Free"

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

September 5, 2013

8

IRL6297SDPbF

DirectFET^®Tape & Reel Dimension (Showing component orientation).

LOADED TAPE FEED DIRECTION

F

D

B

A

H

G

H

E

G

NOTE: Controlling dimensions in mm

Std reel quantity is 4800 parts. (ordered as IRL6297SDTRPBF). For 1000 parts on

7" reel, order IRL6297SDTR1PBF

DIMENSIONS

METRIC

MIN

REEL DIMENSIONS

IMPERIAL

NOTE: CONTROLLING

DIMENSIONS IN MM

STANDARD OPTION (QTY 4800)

TR1 OPTION (QTY 1000)

CODE

MIN

MAX

0.319

0.161

0.484

0.219

0.165

0.205

N.C

MAX

8.10

4.10

12.30

5.55

4.20

5.20

N.C

IMPERIAL

METRIC

MAX

METRIC

MIN MAX

A

B

C

D

E

F

0.311

0.154

0.469

0.215

0.158

0.197

0.059

7.90

3.90

11.90

5.45

4.00

5.00

1.50

CODE

MIN

12.992

0.795

0.504

0.059

3.937

N.C

MIN

6.9

MAX

N.C

0.50

N.C

0.53

N.C

MIN

MAX

N.C

A

B

C

D

E

F

330.0

20.2

12.8

1.5

N.C

13.2

N.C

18.4

14.4

15.4

177.77 N.C

0.75

0.53

0.059

2.31

N.C

19.06

13.5

1.5

N.C

0.520

N.C

12.8

N.C

100.0

N.C

58.72

N.C

11.9

N.C

0.724

0.567

0.606

13.50

12.01

G

H

G

H

0.488

0.469

0.47

12.4

11.9

0.063

1.60

Qualification Information^†

Consumer ^††

(per JEDEC JESD47F^†††guidelines)

MSL1

(per JEDEC J-STD-020D^†††

Qualification level

Moisture Sensitivity Level

RoHS Compliant

DirectFET Small Can

)

Yes

Qualification standards can be found at International Rectifier’s web site

http://www.irf.com/product-info/reliability

Higher qualification ratings may be available should the user have such requirements.

Please contact your International Rectifier sales representative for further information:

http://www.irf.com/whoto-call/salesrep/

Applicable version of JEDEC standard at the time of product release.

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/

9

September 5, 2013


型号：	IRL6297SDPBF
厂家：	Infineon
描述：	Charge and Discharge Switch for Battery Application 电池
文件：	总9页 (文件大小：266K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IRL6297SDPBF [INFINEON]

相关型号：

IRL6297SDPBF_15

IRL630

IRL630

IRL630

IRL630-011PBF

IRL630-018PBF

IRL630-019

IRL630A

IRL630AJ69Z

IRL630A_NL

IRL630PBF

IRL630PBF