IRL630 [SAMSUNG]
Power Field-Effect Transistor, 8A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN;
| 型号： | IRL630 |
| 厂家： | 
SAMSUNG |
| 描述： | Power Field-Effect Transistor, 8A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN 局域网 晶体管 |
| 文件： | 总1页 (文件大小：41K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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