IRL630 [INFINEON]
Power MOSFET(Vdss=200V, RdS(on)=0.40ohm, Id=9.0A); 功率MOSFET （ VDSS = 200V ， RDS（ON） = 0.40ohm ，ID = 9.0A ）
| 型号： | IRL630 |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=200V, RdS(on)=0.40ohm, Id=9.0A) |
| 文件： | 总8页 (文件大小：287K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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PD -9.1255
IRL630
HEXFET® Power MOSFET
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Logic-Level Gate Drive
RDS(ON) Specified at VGS = 4V & 5V
150°C Operating Temperature
Fast Switching
VDSS = 200V
RDS(on) = 0.40Ω
ID = 9.0A
Ease of paralleling
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, V GS @ 5.0V
Continuous Drain Current, V GS @ 5.0V
Pulsed Drain Current
9.0
5.7
A
36
74
PD @TC = 25°C
Power Dissipation
W
W/°C
V
Linear Derating Factor
0.59
VGS
EAS
IAR
Gate-to-Source Voltage
±10
Single Pulse Avalanche Energy
Avalanche Current
250
mJ
A
9.0
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
7.4
mJ
V/ns
5.0
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
°C
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Min.
––––
––––
––––
Typ.
––––
0.50
Max.
1.7
Units
RθJC
RθCS
RθJA
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
––––
62
°C/W
––––
To Order
Revision 0
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IRL630
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
200 ––– –––
––– 0.27 ––– V/°C Reference to 25°C, I D = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– ––– 0.40
––– ––– 0.50
1.0 ––– 2.0
4.8 ––– –––
VGS = 5.0V, ID = 5.4A
VGS = 4.0V, ID = 4.5A
VDS = VGS, ID = 250µA
VDS = 50V, ID = 5.4A
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 125°C
VGS = 10V
Ω
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
––– –––
25
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
––– ––– 250
––– ––– 100
––– ––– -100
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -10V
Qg
––– –––
––– ––– 5.5
––– ––– 24
––– 8.0 –––
40
ID = 9.0A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC
ns
VDS = 160V
VGS = 10V, See Fig. 6 and 13
VDD = 100V
––– 57
––– 38
––– 33
–––
–––
–––
ID = 9.0A
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.0Ω
RD = 11Ω, See Fig. 10
Between lead,
LD
LS
Internal Drain Inductance
Internal Source Inductance
––– 4.5 –––
––– 7.5 –––
6mm (0.25in.)
nH
pF
from package
and center of die contact
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 1100 –––
––– 220 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
––– 70
–––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
IS
––– ––– 9.0
A
showing the
ISM
Pulsed Source Current
(Body Diode)
integral reverse
––– –––
36
p-n junction diode.
TJ = 25°C, IS = 9.0A, VGS = 0V
TJ = 25°C, IF = 9.0A
di/dt = 100A/µs
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– ––– 2.0
––– 230 350
V
ns
µC
Qrr
ton
––– 1.7
2.6
Intrinsic turn-on time is negligible (turn-on is dominated by L S+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD ≤ 9.0A, di/dt ≤ 120A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
VDD = 25V, starting T J = 25°C, L = 4.6mH
Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = 9.0A. (See Figure 12)
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IRL630
100
VGS
TOP
7.50V
5.00V
4.00V
3.50V
3.00V
2.75V
2.50V
BOTTOM 2.25V
10
1
2.25V
20µs PULSE WIDTH
T
c
= 25°C
0.1
100 A
0.1
1
10
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics,
Fig 2. Typical Output Characteristics,
TC = 25oC
TC = 150oC
2.5
2.0
1.5
1.0
0.5
0.0
100
10
I
= 9.0A
D
TJ = 150°C
1
T = 25°C
J
0.1
VDS = 50V
20µs PULSE WIDTH
V
= 5.0V
GS
0.01
A
A
5.0
2.0
2.5
3.0
3.5
4.0
4.5
-60 -40 -20
0
20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRL630
2000
10
8
V
C
C
C
= 0V,
f = 1MHz
I
= 9.0A
GS
iss
rss
oss
D
= C + C
,
C
SHORTED
gs
gd
gd
ds
V
V
V
= 160V
= 100V
= 40V
= C
DS
DS
DS
= C + C
ds
gd
1500
1000
500
0
C
iss
6
4
C
oss
2
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
A
100
0
A
1
10
0
10
20
30
40
V
, Drain-to-Source Voltage (V)
DS
Q , Total Gate Charge (nC)
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10µs
100µs
1ms
T = 150°C
J
T = 25°C
J
10ms
100ms
T
T
= 25°C
= 150°C
C
J
Single Pulse
V
GS
= 0V
0.1
A
0.1
0
0.4
0.8
1.2
1.6
1
10
100
10 00
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
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IRL630
RD
VDS
VGS
10
8
D.U.T.
RG
VDD
5.0 V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
Fig 10a. Switching Time Test Circuit
4
2
0
A
25
50
75
100
125
150
T , Case Temperature (°C)
C
Fig 9. Maximum Drain Current Vs.
Fig 10b. Switching Time Waveforms
Case Temperature
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.1
t
1
0.02
0.01
t
2
Notes:
1. Duty factor D =
SINGLE PULSE
(THERMAL RESPONSE)
t
/ t
2
1
2. Peak T = P
x Z
+ T
C
DM
J
thJC
0.01
0.00001
A
10A
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRL630
600
500
400
300
200
100
0
5.0V
I
D
TOP
9.0A
5.7A
BOTTOM 4.0A
Fig 12a. Unclamped Inductive Test Circuit
V
= 50V
50
DD
A
25
75
100
125
150
Starting T , Juntion Temperature (°C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
5.0V
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRL630
Peak Diode Recovery dv/dt Test Circuit
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
D.U.T
• Low Leakage Inductance
Current Transformer
RG
• dv/dt controlled by R G
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
*
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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IRL630
Package Outline
TO-220AB Outline
10.54 (.415)
10.29 (.405)
NOTES:
- B -
3.78 (.149)
3.54 (.139)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
1 DIMENSIONS & TOLERANCING
PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 DIMENSIONS ARE SHOW N
MILLIMETERS (INCHES).
1.32 (.052)
1.22 (.048)
- A -
6.47 (.255)
6.10 (.240)
4
4 CONFORMS TO JEDEC OUTLINE
TO-220AB.
15.24 (.600)
14.84 (.584)
1.15 (.045)
MIN
LEAD ASSIGNMENTS
1 - GATE
1
2
3
2 - DRAIN
3 - SOURCE
4 - DRAIN
3 X
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3 X
3 X
1.40 (.055)
1.15 (.045)
3 X
0.36 (.014)
M B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
CONFORMS TO JEDEC OUTLINE TO-220AB
Dimensions in Millimeters and (Inches)
Part Marking Information
TO-220AB
PART NUMBER
EXAMPLE: THIS ISAN IRF1010 WITH
ASSEMBLY LOT CODE 9B1M
INTERNATIONAL
RECTIFIER
LOGO
IRF1010
9246
9B
1M
DATE CODE
(YYWW)
ASSEMBLY
LOT CODE
YY= YEAR
WW = WEEK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: (44) 0883 713215
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: (905) 475 1897 IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: 6172 37066 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: (39) 1145
10111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: (03)3983 0641 IR
SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, 0316 Tel: 65 221 8371
Data and specifications subject to change without notice.
To Order
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